• Journal of Internet Computing and Services
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• v.17 no.6
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• pp.41-51
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• 2016

The appearance of 3D-Touch interface provided the basis of a new interaction method between the users and the mob ile interface. However, only a few smartphones provide 3D-Touch features, and most of the 2D-Touch devices does not provide any means of applying the 3D-Touch interactions. This results in different user experiences between the two interaction methods. Thus, this research proposes the Virtual Force Touch method, which allows the users to utilize the 3D-Touch Interface on 2D-Touch based smart devices. This paper propose the suitable virtual force touch mechanism that is possible to realize users' inputs by calculating and analysis the force touch area of users' finger. This proposal is designed on customized smartphone device which has 2D-Touch sensors.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.42 no.6
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• pp.9-18
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• 2005

This paper proposes the color decomposition method for multi-primary display (MPD) using a 3-dimensional look-up-table (3D-LUT) in a linearized LAB space. The proposed method decomposes conventional three-primary colors into the multi-primary control values of a display device under constraints of tristimulus match. To reproduce images on the MPD, the color signals should be estimated from a device-independent color space, such as CIEXYZ and CIELAB. In this paper, the linearized LAB space is used due to its linearity and additivity in color conversion. The proposed method constructs the 3-D LUT, which contain gamut boundary information to calculate color signals of the MPD. For the image reproduction, standard RGB or CIEXYZ is transformed to the linearized LAB and then hue and chroma are computed to refer to the 3D-LUT. In the linearlized LAB space, the color signals of a gamut boundary point with the same lightness and hue of an input point are calculated. Also, color signals of a point on gray axis are calculated with the same lightness of an input. With gamut boundary points and input point, color signals of the input points are obtained with the chroma ratio divided by the chroma of the gamut boundary point. Specially, for the hue change, neighboring boundary points are employed. As a result the proposed method guarantees the continuity of color signals and computational efficiency, and requires less amount of memory.

• Journal of IKEEE
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• v.3 no.2 s.5
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• pp.161-167
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• 1999

3-input neuron-MOSFET inverters and 3-bit D/A converters using enhancement type device have been designed and fabricated by using standard 2-poly CMOS process. The voltage transfer curve and the noise margin of neuron-MOSFET inverters have been measured and characterized as the same method in normal CMOS inverters. From the theoretical calculation of the effects of coupling ratio on the voltage transfer curve and noise margin, we set up the design guideline for the gate oxide thickness and input gate layout in neuron-MOSFET inverters. BT using one of input gates as a control gate, we can design and fabricate the neuron-MOSFET D/A converter without offset voltage.

• Journal of Advanced Navigation Technology
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• v.14 no.1
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• pp.20-26
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• 2010

In this paper, a frequency tripler has been designed with 100mW medium-power using P-HEMT. It is designed to obtain 7.2 GHz frequency at the output that is an integer multiple of 2.4 GHz input frequency by using nonlinear device that produces 3rd harmonic. The frequency tripler is designed by using load-pull simulation. To suppress the 2nd and fundamental, notch filter is used for the frequency tripler. The tripler is designed to obtain about 21dBm output power with 15 dBm input, i.e., 6 dB conversion gain and the suppression of 20 dBc at fundamental, and 30 dBc at the second harmonics.

• Journal of Advanced Navigation Technology
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• v.13 no.4
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• pp.503-508
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• 2009

In this paper, we have designed the auxiliary input device which based on hand-motion recognition. It is aimed at some individually specified person such as the disabled, rehabilitation patient, and the aged. The gyro sensor is used to recognize the hand-motion in 3D space, and communication bandwidth for transceiver is also set to the 2.4GHz. Prototype board includes a set of modules; Gyro sensor, RF transmitter/receiver, MCU for signal processing and USB connector etc. Some experiments are conducted so as to verify the prototype, and as a result, mouse-based curser motion as well as program control are well operated just same as the design specification.

• Journal of IKEEE
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• v.28 no.1
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• pp.33-37
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• 2024

In this paper, we report the design and the measurement of a X-band low noise amplifier (LNA) monolithic microwave integrated circuit (MMIC) using a 0.25 ㎛ gate length microstrip GaN-on-SiC high electron mobility transistor (HEMT) technology. The developed X-band GaN-based LNA MMIC achieves small signal gain of 22.75 dB ~ 25.14 dB and noise figure of 1.84 dB ~ 1.94 dB in the desired band of 9 GHz to 10 GHz. Input and output return loss values are -11.36 dB ~ -24.49 dB and -11.11 dB ~ -17.68 dB, respectively. The LNA MMIC can withstand 40 dBm (10 W) input power without performance degradation. The chip dimensions are 3.67 mm × 1.15 mm. The developed GaN-based LNA MMIC is applicable to various X-band applications.

• 전자공학회논문지 IE
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• v.47 no.3
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• pp.47-52
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• 2010

In this paper, a frequency tripler has been designed with 100mW medium-power using P-HEMT. It is designed to obtain 7.2GHz frequency at the output that is an integer multiple of 2.4GHz input frequency by using nonlinear device that produces 3rd harmonic. The frequency tripler is designed by using load-pull simulation. To suppress the 2nd and fundamental, notch filter is used for the frequency tripler. The tripler is designed to obtain about 21dBm output power with 15dBm input, i.e., 6dB conversion gain and the suppression of 20dBc at fundamental, and 30dBc at the second harmonics.

• Korean Journal of Optics and Photonics
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• v.14 no.3
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• pp.306-311
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• 2003

In this paper, we modeled the incident beam in order to analyze and evaluate the optical thin film device for wavelength division multiplexing in optical telecommunication network. As applied ray tracing method to the optical path, we were compared the accuracy of coupling efficiency simulated by two modeling methods. In the results of sinulation, ceil modeling method was preferred to annual modeling method in micro-optic device because of accuracy for coupling efficiency and Gaussian intensity distribution. In the results of optimal simulation for optical device using thin film filter, the distance (d1) between optical fiber and GRIN lens, the distance (d2) between GRIN lens and thin film filter and the coupling efficiency were 0.24 mm, 0.25 mm and -0.11 ㏈ respectively. As d2 was displaced at 0.25 mm and d1 was varied in order to evaluate the optimal value, d1 and maximum coupling efficiency were 0.24 mm and -0.35㏈, respectively. Then the results of experiment were corresponded to that of optimal simulation by cell modeling and it was possible to analyze the performance for optical device using thin film filter by the simulation.

• ETRI Journal
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• v.16 no.4
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• pp.1-11
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• 1995

A GaAs power metal semiconductor field effect transistor (MESFET) operating at a voltage as low as 3.3V has been developed with the best performance for digital handheld phone. The device has been fabricated on an epitaxial layer with a low-high doped structure grown by molecular beam epitaxy. The MESFET, fabricated using $0.8{\mu}m$ design rule, showed a maximum drain current density of 330 mA/mm at $V_{gs}$ =0.5V and a gate-to-drain breakdown volt-age of 28 V. The MESFET tested at a 3.3 V drain bias and a 900 MHz operation frequency displayed an output power of 32.5-dBm and a power added efficiency of 68%. The associate power gain at 20 dBm input power and the linear gain were 12.5dB and 16.5dB, respectively. Two tone testing measured at 900.00MHz and 900.03MHz showed that a third-order intercept point is 49.5 dBm. The power MESFET developed in this work is expected to be useful as a power amplifying device for digital hand-held phone because the high linear gain can deliver a high power added efficiency in the linear operation region of output power and the high third-order intercept point can reduce the third-order intermodulation.

• Journal of electromagnetic engineering and science
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• v.18 no.3
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• pp.188-198
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• 2018

In this study, we propose an approach for the design and satisfy the requirements of the fabrication of a small, lightweight, reliable, and stable ultra-wideband receiver for millimeter-wave bands and the contents of the approach. In this paper, we designed and fabricated a stable receiver with having low noise figure, flat gain characteristics, and low noise characteristics, suitable for millimeter-wave bands. The method uses the chip-and-wire process for the assembly and operation of a bare MMIC device. In order to compensate for the mismatch between the components used in the receiver, an amplifier, mixer, multiplier, and filter suitable for wideband frequency characteristics were designed and applied to the receiver. To improve the low frequency and narrow bandwidth of existing products, mathematical modeling of the wideband receiver was performed and based on this spurious signals generated from complex local oscillation signals were designed so as not to affect the RF path. In the ultra-wideband receiver, the gain was between 22.2 dB and 28.5 dB at Band A (input frequency, 18-26 GHz) with a flatness of approximately 6.3 dB, while the gain was between 21.9 dB and 26.0 dB at Band B (input frequency, 26-40 GHz) with a flatness of approximately 4.1 dB. The measured value of the noise figure at Band A was 7.92 dB and the maximum value of noise figure, measured at Band B was 8.58 dB. The leakage signal of the local oscillator (LO) was -97.3 dBm and -90 dBm at the 33 GHz and 44 GHz path, respectively. Measurement was made at the 15 GHz IF output of band A (LO, 33 GHz) and the suppression characteristic obtained through the measurement was approximately 30 dBc.