• 전기의세계
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• v.34 no.12
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• pp.733-735
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• 1985

이 방법은 기존의 CMOS제작방법에 비교하여 스윗칭 속력의 증가와 제작의 단순화, 적은 디바이스로의 축소 용이와 집적밀도 증가, 균형된 스윗칭, 신뢰도 증가라는 잇점을 보유하고 있다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.231-231
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• 2013

ZnO은 hexagonal wurtzite 구조를 갖는 직접 천이형 화합물 반도체로서, 상온에서 3.37 eV 정도의 wide band gap energy를 가지고 있으며, 60 meV의 큰 엑시톤 결합 에너지(exciton binding energy)를 갖는다. 또한 동종 기판이 존재하고 열, 화학적으로 안정한 상태이며 습식 식각이 가능한 장점으로 인해 각광받고 있다. 또한, ZnO 박막은 우수한 전기 전도성을 나타내며 광학적 투명도가 우수하기 때문에 투명전극으로 많이 이용되어 왔고, 태양 전지(solar cell), 가스 센서, 압전소자 등 많은 분야에서 사용되고 있다. 이와 같은 ZnO박막을 안정적인 쇼트키 다이오드 특성을 얻기 위해서는 쇼트키 배리어 장벽의 형성이 필수적이다. Mg을 ZnO에 첨가하여 MgZnO 박막을 형성할 경우, 금속의 일함수와 MgZnO의 전자친화력 차이가 증가하여 더 큰 쇼트키 장벽 형성이 가능하며, 금속의 일함수가 큰 물질을 사용해야 한다. 또한, 박막의 결함이 적은 박막을 형성해야 하는 에피탁셜 박막이 필요하다. SiC는 높은 포화 전자 드리프트 속도(${\sim}2.7{\times}107$ cm/s), 높은 절연 파괴전압(~3 MV/cm)과 높은 열전도율(~5.0W/cm) 특징을 가지고 있으며, MgZnO/Al2O3의 격자 불일치는 ~19%인 반면에 MgZnO/SiC의 격자 불일치는 ~6%를 가진다. 금속의 일함수가 큰 Ag 금속은 열처리가 될 경우 AgOx가 될 경우 더욱 안정적인 쇼트키 장벽을 형성될 수 있을 것으로 판단된다. 본 연구에서는 쇼트키 접합을 형성하기 위해 금속의 일함수가 큰 Ag 금속을 사용하였으며, Al2O3 기판과 6H-SiC 기판위에 MgZnO(30 at.%) 박막을 증착하였다. 증착 후에 Ag를 증착 한 뒤 급속 열처리를 하였다. 열처리된 MgZnO의 경우 열처리 하지않은 소자보다 약 $10^5$ 이상의 우수한 on/off 특성을 보였다.

• Journal of the Institute of Electronics and Information Engineers
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• v.54 no.1
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• pp.21-25
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• 2017

In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal ${\beta}-Ga_2O_3$ semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a $2{\mu}m$ Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of $1.26m{\Omega}{\cdot}cm^2$, and forward current densities of $77A/cm^2$ at 1 V and $473A/cm^2$ at 1.5 V, which proved the potential for use in power device fabrication.

• Journal of IKEEE
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• v.21 no.1
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• pp.73-76
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• 2017

SiC devices have drawn much attentions for its wide band gap material properties. Especially 4H-SiC Schottky barrier diode is widely used for its rapid switching speed and low forward voltage drop. However, the low reliability of Schottky barrier diode has many problems that Super Barrier Rectifier(SBR) was researched for alternative. makes 4H-SiC trench-type accumulation super barrier rectifier(TASBR) is analyzed and proposed in this paper. We could verified that forward voltage drop was improved 21.06% without severe degradation of reverse breakdown voltage and leakage current based on the results from 2-D numerical simulations. With this novel rectifier structure, we can expect application with less power loss.

• Journal of the Korean Institute of Telematics and Electronics
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• v.9 no.3
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• pp.22-28
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• 1972

A new full-adder is proposed and it's operation-characteristic is described. The circuit proposed here was improved in operational stability and cicuit-configuration. The circuit is composed of a tunnel diode, Schottky-barrier diodes. The circuit design and it's opration is explained by considering the change of the load line when the input current is applied. The explanations are proved by experimental details.

• Proceedings of the KAIS Fall Conference
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• 2006.05a
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• pp.207-208
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• 2006

분자선(分子線)에피택시법(法)으로 성장(成長)한 ZnO 산화물반도체(酸化物半導體)를 이용(利用)하여 제작(製作)한 쇼트키배리어 다이오드에 대하여 자외선(紫外線) 광(光)센서로서의 광특성(光特性)을 조사(調査)한다. 첫째, 백색광(白色光) 조사시(照射時) 포화전류치(飽和電流値)가 100배(培) 이상(以上) 증가(增加)하는 광(光)여기 특성(特性)을 나타낸다. 둘째, 조사(照射)하는 �셈� 파장(波長)에 대하 390nm의 차단장파장(遮斷長波長)을 갖으며 195nm 이상(以上)의 밴드폭을 갖는 파장감도특성(波長感度特性)을 나타낸다. 셋째, 자외선(紫外線)에 대해 0.36msec의 시정수(時定數) 갖는 것으로 평가(評價)된다. 따라서, ZnO 산화물반도체(酸化物半導體)는 향후(向後) 자외선(紫外線) 광(光)센서소자의 재과(材科)로서 기대(期待)되어진다.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.7
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• pp.11-16
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• 2016

Silicon carbide (SiC) has received significant attention over the past decade because of its high-voltage, high-frequency and high-thermal reliability in devices compared to silicon. Especially, a SiC Schottky barrier diode (SBD) is most often used in low-voltage switching and low on-resistance power applications. However, electric field crowding at the contact edge of SBDs induces early breakdown and limits their performance. To overcome this problem, several edge termination techniques have been proposed. This paper proposes an improvement in the breakdown voltage using a double-field-plate structure in SiC SBDs, and we design, simulate, fabricate, and characterize the proposed structure. The measurement results of the proposed structure, demonstrate that the breakdown voltage can be improved by 38% while maintaining its forward characteristics without any change in the size of the anode contact junction region.

• Korean Journal of Materials Research
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• v.31 no.2
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• pp.97-100
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• 2021

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.48-52
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• 2017

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.3
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• pp.345-353
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• 2011

An 1.485 Gbit/s video signal transmission system using the carrier frequency of H-band(220~325 GHz) was implemented and demonstrated for the first in domestic. The RF front-end was composed of Schottky barrier diode sub-harmonic mixers(SHM) and frequency triplers, and diagonal horn antennas for transmitter and receiver, respectively. The transmitted carrier frequency of 246 GHz was implemented in the H-band, and LO frequencies of H-band SHM is 120 GHz and 126 GHz for transmit and receive chains, respectively. The modulation scheme is ASK(Amplitude Shift Keying) where IF frequency is 5.94 GHz and the envelop detection was used in heterodyne receiver architecture, and direct detection receiver using ZBD(Zero Bias Detector) was implemented as well. The 1.485 Gbit/s video signal with HD-SDI format was successfully transmitted over wireless link distance of 5 m and displayed on HDTV at the transmitted average output power of 20 ${\mu}W$.