Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Characterization of the Schottky Barrier Height of the Pt/HfO2/p-type Si MIS Capacitor by Internal Photoemission Spectroscopy

내부 광전자방출 분광법을 이용한 Pt/HfO2/p-Si Metal-Insulator-Semiconductor 커패시터의 쇼트키 배리어 분석

  • Lee, Sang Yeon (Department of Energy Systems Research, Ajou University) ;
  • Seo, Hyungtak (Department of Energy Systems Research, Ajou University)
  • 이상연 (아주대학교 에너지 시스템학과) ;
  • 서형탁 (아주대학교 에너지 시스템학과)
  • Received : 2016.10.19
  • Accepted : 2016.12.02
  • Published : 2017.01.27
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Abstract

In this study, we used I-V spectroscopy, photoconductivity (PC) yield and internal photoemission (IPE) yield using IPE spectroscopy to characterize the Schottky barrier heights (SBH) at insulator-semiconductor interfaces of Pt/$HfO_2$/p-type Si metal-insulator-semiconductor (MIS) capacitors. The leakage current characteristics of the MIS capacitor were analyzed according to the J-V and C-V curves. The leakage current behavior of the capacitors, which depends on the applied electric field, can be described using the Poole-Frenkel (P-F) emission, trap assisted tunneling (TAT), and direct tunneling (DT) models. The leakage current transport mechanism is controlled by the trap level energy depth of $HfO_2$. In order to further study the SBH and the electronic tunneling mechanism, the internal photoemission (IPE) yield was measured and analyzed. We obtained the SBH values of the Pt/$HfO_2$/p-type Si for use in Fowler plots in the square and cubic root IPE yield spectra curves. At the Pt/$HfO_2$/p-type Si interface, the SBH difference, which depends on the electrical potential, is related to (1) the work function (WF) difference and between the Pt and p-type Si and (2) the sub-gap defect state features (density and energy) in the given dielectric.

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References

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