Korean Journal of Materials Research (한국재료학회지)

Materials Research Society of Korea (한국재료학회)
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Effect of SC-1 Cleaning to Prevent Al Diffusion for Ti Schottky Barrier Diode

Ti 쇼트키 배리어 다이오드의 Al 확산 방지를 위한 SC-1 세정 효과

  • Choi, Jinseok (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology) ;
  • Choi, Yeo Jin (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology) ;
  • An, Sung Jin (Department of Advanced Materials Science and Engineering, Kumoh National Institute of Technology)
  • 최진석 (금오공과대학교 신소재공학과) ;
  • 최여진 (금오공과대학교 신소재공학과) ;
  • 안성진 (금오공과대학교 신소재공학과)
  • Received : 2021.01.18
  • Accepted : 2021.01.28
  • Published : 2021.02.27
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Abstract

We report the effect of Standard Clean-1 (SC-1) cleaning to remove residual Ti layers after silicidation to prevent Al diffusion into Si wafer for Ti Schottky barrier diodes (Ti-SBD). Regardless of SC-1 cleaning, the presence of oxygen atoms is confirmed by Auger electron spectroscopy (AES) depth profile analysis between Al and Ti-silicide layers. Al atoms at the interface of Ti-silicide and Si wafer are detected, when the SC-1 cleaning is not conducted after rapid thermal annealing. On the other hand, Al atoms are not found at the interface of Ti-SBD after executing SC-1 cleaning. Al diffusion into the interface between Ti-silicide and Si wafer may be caused by thermal stress at the Ti-silicide layer. The difference of the thermal expansion coefficients of Ti and Ti-silicide gives rise to thermal stress at the interface during the Al layer deposition and sintering processes. Although a longer sintering time is conducted for Ti-SBD, the Al atoms do not diffuse into the surface of the Si wafer. Therefore, the removal of the Ti layer by the SC-1 cleaning can prevent Al diffusion for Ti-SBD.

Keywords

References

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