Journal of the Institute of Electronics and Information Engineers (전자공학회논문지)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Schottky Barrier Diode Fabricated on Single Crystal β-Ga2O3 Semiconductor

단결정 β-Ga2O3 반도체를 이용한 쇼트키 배리어 다이오드 제작

  • Kim, Hyun-Seop (School of Electronic and Electrical Engineering, Hongik University) ;
  • Jo, Min-Gi (School of Electronic and Electrical Engineering, Hongik University) ;
  • Cha, Ho-Young (School of Electronic and Electrical Engineering, Hongik University)
  • 김현섭 (홍익대학교 전자전기공학부) ;
  • 조민기 (홍익대학교 전자전기공학부) ;
  • 차호영 (홍익대학교 전자전기공학부)
  • Received : 2016.09.09
  • Accepted : 2016.12.08
  • Published : 2017.01.25
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Abstract

In this study, we have fabricated Schottky barrier diodes (SBD) on single-crystal ${\beta}-Ga_2O_3$ semiconductor that has received much attention for use in next-generation power devices. The SBD had a Pt/Ti/Au Schottky contact on a $2{\mu}m$ Sn-doped low concentration N-type epitaxial layer. The fabricated device exhibited a breakdown voltage of > 180 V, a specific on-resistance of $1.26m{\Omega}{\cdot}cm^2$, and forward current densities of $77A/cm^2$ at 1 V and $473A/cm^2$ at 1.5 V, which proved the potential for use in power device fabrication.

본 연구에서는 최근 차세대 전력 반도체로 관심을 받고 있는 단결정 ${\beta}-Ga_2O_3$를 이용한 쇼트키 배리어 다이오드 제작 및 특성 분석을 수행하였다. 쇼트키 배리어 다이오드는 Sn으로 도핑된 $2{\mu}m$ 두께의 저농도 N 타입 에피층 상에 Pt/Ti/Au 쇼트키 접합으로 제작되었으며 측정된 특성은 > 180 V의 항복전압, $1.26m{\Omega}{\cdot}cm^2$의 온 저항, 그리고 1 V의 순 방향 전압에서 $77A/cm^2$, 1.5 V에서 $473A/cm^2$의 순방향 전류 특성을 나타내었다. 본 연구를 통하여 단결정 ${\beta}-Ga_2O_3$의 전력반도체 활용 가능성을 확인 할 수 있었다.

Keywords

References

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