• Title/Summary/Keyword: 래치

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An Experimental Analysis for a High Pulse Radiation Induced Latchup Conformation (고준위 펄스방사선에 의한 전자소자 Latchup의 발생시험 및 분석)

  • Lee, Nam-Ho;Hwang, Young-Gwan;Jeong, Sang-Hun;Kim, Jong-Yeol
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.18 no.12
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    • pp.3079-3084
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    • 2014
  • When an integrated circuit device is burned out under high-intense radiation and device-level simulation that usually requires manufacturer's proprietary information is not available, experimental conformation of a failure mechanism is often the only choice. To distinguish Latchup from other causes experimentally, a new combination of multiple techniques have been developed and demonstrated. Power supply circumvention, hot-spot monitoring using an infrared camera, and supply current monitoring techniques were implemented for the conformation of the Latchup.

A Study of CMOS Latch-Up by Layout Dependence (레이아우트 변화에 대한 CMOS의 래치업 특성 연구)

  • 손종형;한백형
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.17 no.8
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    • pp.898-907
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    • 1992
  • This paper deals with a detailed analysis of CMOS latch up dependancies on the layout and geo-metrical demensions on the mask using same materials and same processes. For this purpose, six different layout models depending upon the N+ / P+ spacing and three different guard ring models have been gesigned, fabricated, and tested. As a result, common emitter current gain, shunt resistance, and holeing current versus N+/P+ spacing have been measured and analyzed experimentally. Also the fact that guard ring is sffective in reducing the latchup possibility has been verified through this study.

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A Low Complexity and A Low Latency Systolic Arrays for Multiplication in GF($2^m$) Using An Optimal Normal Basis of Type II (타입 II ONB를 이용한 GF($2^m$)상의 곱셈에 대한 낮은 복잡도와 작은 지연시간을 가지는 시스톨릭 어레이)

  • Kwon, Soon-Hak;Kwon, Yun-Ki;Kim, Chang-Hoon;Hong, Chun-Pyo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.33 no.1C
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    • pp.140-148
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    • 2008
  • Using the self duality of an optimal normal basis(ONB) of type II, we present a bit parallel and bit serial systolic arrays over GF($2^m$) which has a low hardware complexity and a low latency. We show that our multiplier has a latency m+1 and the basic cell of our circuit design needs 5 latches(flip-flops). Comparing with other arrays of the same kinds, we find that our array has significantly reduced latency and hardware complexity.

A study on the change of die roll size by the shape of die chamfer in fine blanking die for automobile door latch (자동차 도어 래치 성형용 파인 블랭킹 금형의 다이 챔퍼 형상에 따른 다이 롤 크기 변화에 대한 연구)

  • Kim, Jong-Deok;Kim, Heung-Kyu
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.12 no.2
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    • pp.565-570
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    • 2011
  • There is always die roll in fine blanking parts which is able to have 100% clean shear surface. In this paper the change of die roll size was studied by fine blanking tryout in order to minimize die roll size. Various die inserts with different die chamfer were machined, fine blanking die was manufactured and tested. The die roll sizes of fine blanking samples were measured and the tendency of thickness directional die roll size was comprehended. This result will be used on the design of die chamfer in order to minimize thickness directional die roll size of fine blanking parts

A Study on SCR-based Dual Directional ESD Protection Device with High Holding Voltage by Self-Biasing Effect (Self-Biasing 효과로 높은 홀딩 전압을 갖는 SCR 기반 양방향 ESD 보호 소자에 관한 연구)

  • Jung, Jang-Han;Jeong, Seung-Koo;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.26 no.1
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    • pp.119-123
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    • 2022
  • This paper propose a new ESD protection device suitable for 12V class applications by adding a self-biasing structure to an ESD protection device with high holding voltage due to additional parasitic bipolar BJT. To verify the operating principle and electrical characteristics of the proposed device, current density simulation and HBM simulation were performed using Synopsys' TCAD Simulation, and the operation of the additional self-biasing structure was confirmed. As a result of the simulation, it was confirmed that the proposed ESD protection device has a higher level of holding voltage compared to the existing ESD protection device. It is expected to have high area efficiency due to the dual structure and sufficient latch-up immunity in 12V-class applications.

The Scan-Based BIST Architecture for Considering 2-Pattern Test (2-패턴 테스트를 고려한 스캔 기반 BIST 구조)

  • 손윤식;정정화
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.40 no.10
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    • pp.45-51
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    • 2003
  • In this paper, a scan-based low power BIST (Built-In Self-Test) architecture is proposed. The proposed architecture is based on STUMPS, which uses a LFSR (Linear Feedback Shift Register) as the test generator, a MISR(Multiple Input Shift Register) as the reponse compactor, and SRL(Shift Register Latch) channels as multiple scan paths. In the proposed BIST a degenerate MISR structure is used for every SRL channel; this offers reduced area overheads and has less impact on performance than the STUMPS techniques. The proposed BIST is designed to support both test-per-clock and test-per-scan techniques, and in test-per-scan the total power consumption of the circuit can be reduced dramatically by suppressing the effects of scan data on the circuits. Results of the experiments on ISCAS 89 benchmark circuits show that this architecture is also suitable for detecting path delay faults, when the hamming distance of the data in the SRL channel is considered.

Analysis of the electrical characteristics of the novel IGBT with additional nMOS (새로운 구조의 nMOS 삽입형 IGBT의 전기적 특성 분석)

  • Shin, Samuell;Son, Jung-Man;Park, Tea-Ryoung;Koo, Yong-Seo
    • Journal of IKEEE
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    • v.12 no.4
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    • pp.255-262
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    • 2008
  • In this paper, we proposed the novel IGBT with an additional n-type MOS structure to achieve the improved trade-off between turn-off and on-state voltage drop(Vce(sat)). These low on-resistance and the fast switching characteristics of the proposed IGBT are caused by an enhanced electron current injection efficiency which is caused by additional n-type MOS structure. In the simulation result, the proposed IGBT has the lower on state voltage of 2.65V and the shorter turn-off time of 4.5us than those of the conventional IGBT(3.33V, 5us).

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Filed Programmable Logic Control and Test Pattern Generation for IoT Multiple Object switch Control (사물인터넷 환경에서 다중 객체 스위치 제어를 위한 프로그래밍 가능한 로직제어 및 테스트 패턴 형성)

  • Kim, Eung-Ju;Jung, Ji-Hak
    • Journal of Internet of Things and Convergence
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    • v.6 no.1
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    • pp.97-102
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    • 2020
  • Multi-Channel Switch ICs for IoT have integrated several solid state structure low ON-resistance bi-directional relay MOS switches with level shifter to drive high voltage and they should be independently controlled by external serialized logic control. These devices are designed for using in applications requiring high-voltage switching control by low-voltage control signals, such as medical ultra-sound imaging, ink-jet printer control, bare board open/short and leakage test system using Kelvin 4-terminal measurement method. This paper describes implementation of analog switch control block and its verification using Field programmable Gate Array (FPGA) test pattern generation. Each block has been implemented using Verilog hardware description language then simulated by Modelsim and prototyped in a FPGA board. Compare to conventional IC, The proposed architecture can be applied to fields where multiple entities need to be controlled simultaneously in the IoT environment and the proposed pattern generation method can be applied to test similar types of ICs.

Damage Effect and Delay Time of CMOS Integrated Circuits Device with Coupling Caused by High Power Microwave (도선에 커플링 되는 고출력 전자파에 의한 CMOS IC의 피해 효과 및 회복 시간)

  • Hwang, Sun-Mook;Hong, Joo-Il;Han, Seung-Moon;Huh, Chang-Su
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.19 no.6
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    • pp.597-602
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    • 2008
  • This paper examines the damage effect and delay time of CMOS integrated circuits device with coupling caused by high power microwaves. The waveguide and magnetron was employed to study the influence of high power micro-waves on CMOS inverters. The CMOS inverters were composed of a LED circuit for visual discernment. Also CMOS inverters broken by high power microwave is observed with supply current and delay time. When the power supply current was increased 2.14 times for normal current at 9.9 kV/m, the CMOS inverter was broken by latch-up. Three different types of damage were observed by microscopic analysis: component, onchipwire, and bondwire destruction. Based on the results, CMOS inverters can be applied to database to elucidate the effects of microwaves on electronic equipment.

A Study on the Tele-controller System of Navigational Aids Using Hybrid Communication (하이브리드 통신을 이용한 항로표지의 원격관리 제어시스템에 관한 연구)

  • Jeon, Joong-Sung;Oh, Jin-Seok
    • Journal of Advanced Marine Engineering and Technology
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    • v.35 no.6
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    • pp.842-848
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    • 2011
  • A fabricated hybrid control board using multi-communication is designed with a low power 8-bit microcontroller, ATxmega128A1. The microcontroller consists of 8 UART (Universal asynchronous receiver/transmitter) ports, 2 kbytes EEPROM, 128 kbytes flash memory, 8 kbytes SRAM. The 8 URAT ports are used for a multi-communication modem, a GPS module, etc. The EEPROM is used for saving a configuration for running programs, and the flash memory of 128 kbytes is used for storing a F/W (Firm Ware), and the 8 kbytes SRAM is used for stack and for storing memory of global variables while running programs. If we use the multi-communication of CDMA, TRS and RF to remotely control Aid to Navigation, it is able to remove the communication shadow area. Even though there is a shadow area for an individual communication method, we can select an optimal communication method. The compatibility of data has been enhanced as using of same data frame per communication device. For the test, 8640 of data have been collected from each buoy during 30 days in every 5 minutes and the receiving rate of the data has shown more than 85 %.