• Title/Summary/Keyword: ${Y_2}{O_3}$buffer layer

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Optimization of Corrosion Properties of Ti/TiO2/IrO2-RuO2 Electrodes via Taguchi Method (Taguchi법을 이용한 Ti/TiO2/IrO2-RuO2전극의 부식특성 최적화)

  • 이득용;채경선;최형기;예경환;안중홍;송요승
    • Journal of the Korean Ceramic Society
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    • v.39 no.6
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    • pp.582-588
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    • 2002
  • IrO$_2$-RuO$_2$ films were deposited on plasma sprayed TiO$_2$ buffer layer above Ti metal by sol-gel and dip-coating method. Organic vehicle (ethyl cellulose and $\alpha$-terpineol) and glass frit were added to improve adherence of the coatings. Taguchi method and L$_{18}$ (2$^1$$\times$3$^{7}$ ) orthogonal arrays were evalvated in terms of current density to determine the optimal combination of levels of factors that best satisfy the bigger is better quality characteristic. The observed conditions were as fellows: ethyl cellulose (100 cp), drying temperature and time (17$0^{\circ}C$,20 min), heat treatment temperature and time (75$0^{\circ}C$,10 min), the weight ratio of IrO$_2$-RuO/powders to glass frit (99:5), final heat treatment time (120 min) and flow rate of air (5 sccm), respectively. ANOVA analysis suggested that the influence of the factors within $\alpha$= 0.1 was significant with a 90% confidence level.

Determination of the pH of Iso-Selectivity of the Interfacial Diffusion Layer of Fe

  • Ha, Heon Young;Kwon, Hyuk Sang
    • Corrosion Science and Technology
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    • v.7 no.1
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    • pp.40-44
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    • 2008
  • Passive metal forms an interfacial diffuse layer on the surface of passive film by its reaction with $H^+$ or $OH^-$ ions in solution depending on solution pH. There is a critical pH, called pH point of iso-selectivity ($pH_{pis}$) at which the nature of the diffuse layer is changed from the anion-permeable at pH<$pH_{pis}$ to the cation-permeable at pH>$pH_{pis}$. The $pH_{pis}$ for a passivated Fe was determined by examining the effects of pH on the thickness of passive film and on the dissolution reaction occurring on the passive film under a gavanostatic reduction in borate-phosphate buffer solutions at various pH of 7~11. The steady-state thickness of passive film formed on Fe showed the maximum at pH 8.5~9, and further the nature of film dissolution reaction was changed from a reaction producing $Fe^{3+}$ ion at $pH\leq8.5$ to that producing $FeO_2{^-}$ at $pH\geq9$, suggesting that the $pH_{pis}$ of Fe is about pH 8.5~9. In addition, the passive film formed at pH 8.5~9, $pH_{pis}$, was found to be the most protective with the lowest defect density as confirmed by the Mott-Schottky analysis. Pitting potential was decreased with increasing $Cl^-$ concentration at $pH\leq8.5$ due probably to the formation of anion permeable diffuse layer, but it was almost constant at $pH\geq9$ irrespective of $Cl^-$ concentration due primarily to the formation of cation permeable diffuse layer on the film, confirming again that $pH_{pis}$ of Fe is 8.5~9.

Fabrication and Characterization of the BLT/STA/Si Structure for Fe-FETs Application

  • Park, Kwang-Huna;Jeon, Ho-Seung;Park, Jun-Seo;Im, Jong-Hyun;Park, Byung-Eun;Kim, Chul-Ju
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.73-74
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    • 2006
  • Ferroelectric thin films have been widely investigated for future nonvolatile memory application. We fabricated the BLT ($(Bi,La)_4Ti_3O_{12}$) films on Si using a STA ($SrTa_2O_6$) buffer layer BLT and STA film were prepared by sol-gel method. Measurement data by XRD and AFM, showed that BLT film and STA films were well crystallized and a good surface morphology. From C-V measurement reward that the Au/BLT/STA/Si structure showed a clockwise hysteresis loop with a memory window of 1.5 V for the bias voltage sweep of ${\pm}5$ V. From results, the Au/BLT/STA/Si structure is useful for FeFETs.

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A Study on the Interface and Luminescent Properties of OLED using $Al_2Nq_4$ as an Emitting Layer ($Al_2Nq_4$를 발광층으로 이용한 OLED의 계면 및 발광 특성에 관한 연구)

  • Yang, Ki-Sung;Lee, Ho-Sik;Shin, Hoon-Kyu;Kim, Doo-Seok;Kim, Chung-Kyun;Kwon, Young-Soo
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.215-219
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    • 2004
  • Metal-chelate derivatives have been investigated intensively as an emitting layer and recognize to have excellent electroluminescence(EL) properties. We synthesized new luminescent material, 1,4-dihydoxy-5,8-naphtaquinone $Aiq_3$ complex($Al_2Nq_4$) and investigated the electrical optical properties. OLED has potential candidates for information display with merits of thickness, low power and high efficiency. Although the OLED show a lot of advantages for information display, it has the limit of inorganic(metal)/ organic interface. In this study, the two methods are used to study the interface of metal/organic in OLED. First, we treated $O_2$ plasma on an ITO thin film by using RIE system, and analyzed the ingredient of ITO thin film according to change of the processing conditions. We used the RDS and the XPS for the ingredient analysis of the surface and bulk. We measured electrical resistivity using Four-Point-Probe and calculated sheet resistance, and ITO surface roughness was measured by using AFM. We fabricated OLED using substrate that was treated optimum ITO surface. Second, we used the buffer layer of CuPc to improve the characteristics of the interface and the hole injection in OLED. The result of the study for electrical and optical properties by using I V L T System(Flat Panel Display Analysis System), we confirmed that the electrical properties and the luminance properties were improved.

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Optical and Electrical Properties of InAs Sub-Monolayer Quantum Dot Solar Cell

  • Han, Im-Sik;Park, Dong-U;No, Sam-Gyu;Kim, Jong-Su;Kim, Jin-Su;Kim, Jun-O
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.196.2-196.2
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    • 2013
  • 본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

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Silicon 기판과 SiON 박막 사이의 계면 결함 감소를 위한 $NH_3$ Plasma Treatment 방법에 관한 연구

  • Gong, Dae-Yeong;Park, Seung-Man;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.131-131
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    • 2011
  • 이종접합 태양전지 제작을 위해 기판의 buffer layer로 사용되는 기존의 a-Si 박막을 SiON 박막으로 대체하려는 연구가 진행 중이다. 기존의 a-Si 박막은 대면적에서 균일도를 담보하기 어렵고, 열적 안정성에 취약한 문제점이 있다. 이에 반해 SiON 박막은 일종의 화학 반응인 oxidation 방법으로 형성이 되기 때문에 막의 균일도를 담보 할 수 있고, $400^{\circ}C$이상의 온도에서 형성되기 때문에 열적 안정성이 우수한 장점이 있다. 이러한 장점에도 불구하고 기판위에 직접 형성이 되기 때문에 기판과 SiON 계면 사이의 pssivation이 무엇보다 중요하다. 본 연구에서는 비정질 실리콘 이종접합 태양전지에 적용키 위한 SiON 박막을 형성하고, 기판과 SiON 계면에서의 passivation 향상을 위한 계면 결함 감소에 대한 연구를 진행하였다. 실험을 위한 SiON 박막은 공정온도 $450^{\circ}C$, 공정압력 100 mTorr, 증착파워 120 mW/cm2에서 5분간 증착하였으며, 이때 50 sccm의 N2O 가스를 주입하였다. 증착된 박막은 2~4 nm의 두께로 증착이 되었으며, 1.46의 광학적 굴절률을 가지는 것으로 분석되었다. 계면의 결함을 줄이기 위해 PECVD를 이용한 NH3 plasma treatment를 실시하였다. 공정온도 $400^{\circ}C$, 공정압력 150mTorr~450 mTorr, 플라즈마 파워 60mW/cm2에서 30분간 진행하였으며, 50 sccm의 N2O 가스를 주입하였다. 계면의 결함이 줄었는지 확인하기 위해 C-V 측정을 위한 시료를 제작하여 분석을 하였다. 실험 결과 VFB가 NH3 plasma treatment 이후 positive 방향으로 shift 됨을 알 수 있었다. Dit 분석을 통해 공정 압력 450 mTorr에서 $4.66{\times}108$[cm2/eV]로 가장 낮은 계면 결함 밀도를 확인 할 수 있었다. 결과적으로 NH3 plasma 처리를 통해 positive charge를 갖는 N-content가 형성되었음을 예측해 볼 수 있으며, N-content가 증가하면, 조밀한 Si-N 결합을 형성하면서, boron 및 phosphorus diffusion을 막는데 효과적이다. 또한, plasma treatment 과정에서 H-content에 의한 passivation 효과를 기대할 수 있다.

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A Materials Approach to Resistive Switching Memory Oxides

  • Hasan, M.;Dong, R.;Lee, D.S.;Seong, D.J.;Choi, H.J.;Pyun, M.B.;Hwang, H.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.8 no.1
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    • pp.66-79
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    • 2008
  • Several oxides have recently been reported to have resistance-switching characteristics for nonvolatile memory (NVM) applications. Both binary and ternary oxides demonstrated great potential as resistive-switching memory elements. However, the switching mechanisms have not yet been clearly understood, and the uniformity and reproducibility of devices have not been sufficient for gigabit-NVM applications. The primary requirements for oxides in memory applications are scalability, fast switching speed, good memory retention, a reasonable resistive window, and constant working voltage. In this paper, we discuss several materials that are resistive-switching elements and also focus on their switching mechanisms. We evaluated non-stoichiometric polycrystalline oxides ($Nb_2O_5$, and $ZrO_x$) and subsequently the resistive switching of $Cu_xO$ and heavily Cu-doped $MoO_x$ film for their compatibility with modem transistor-process cycles. Single-crystalline Nb-doped $SrTiO_3$ (NbSTO) was also investigated, and we found a Pt/single-crystal NbSTO Schottky junction had excellent memory characteristics. Epitaxial NbSTO film was grown on an Si substrate using conducting TiN as a buffer layer to introduce single-crystal NbSTO into the CMOS process and preserve its excellent electrical characteristics.

A Study of Pore Formation of AAO Film on Si Substrate with Optimizing Process (Si 기판에 제작된 AAO 박막의 기공 형성 최적화에 관한 연구)

  • Kwon, Soon-Il;Yang, Kea-Joon;Song, Woo-Chang;Lee, Jae-Hyeong;Lim, Dong-Gun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.5
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    • pp.415-420
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    • 2008
  • AAO films were fabricated on two kinds of substrates such as $Al/SiO_2/Si$ and Al/Ni/Ti/Si. To obtain well-aligned AAO film, we optimized process condition for buffer layer, electrolyte and voltage. In the case of oxalic acid, the AAO film with pore size of approximately 45 nm was obtained at voltage of 40 V, temperature of $10^{\circ}C$, oxalic acid of 0.3 M and widening time of 60 min. Then the thickness of barrier is less than 600 nm. In the case of sulfuric acid, the AAO film has pore size of 40 nm and barrier thickness of 400 nm with optimum conditions such as voltage of 25 V, temperature of $8^{\circ}C$, sulfuric acid of 0.3 M and widening time of 60 min.

Effect of thermo-mechanical treatment on fabrication of Ag tapes for YBCO coated conductor (차세대 선재 기판용 Ag 테이프의 제조공정에서 가공 열처리가 집합조직에 미치는 영향)

  • Lee, N.J.;Oh, S.S.;Park, C.;Song, K.J.;Ha, D.W.;Kwon, Y.K.;Ryu, K.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04a
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    • pp.46-49
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    • 2002
  • The aim of this paper is to investigate the influence of various deformation ratio on texture of Ag tapes that can be used as a RE-$Ba_2Cu_3O_{7-{\delta}}$ coated conductor tapes without any buffer layer. We fabricated as-rolled Ag substrate with various deformation ratio per step. Thickness and total deformation ratio of Ag tapes were $100{\mu}m$ and >98%, respectively. And as-rolled Ag substrate was annealed at $750^{\circ}C$ for 30min. The as-rolled and recrystallization textures were measured using x-ray pole figures and orientation distribution function (ODF) analysis. With the increase of rolling ratio from 5 to 20%, deformation texture are changed from {1l0}<311> to {1l0}<112>, {032}<100>, {051}<211>. After recrystallization by annealing, main texture was observed to {013}<100> under present condition.

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Studies on the Bacteriophages of Brevibacterium lactofermentum (L-글루타민산 생산균 Brevibacterium lactofermentum의 Bacteriophag에 관한 연구)

  • 이태우
    • Korean Journal of Microbiology
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    • v.17 no.3
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    • pp.97-130
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    • 1979
  • Many industrial processes those employ bacteria are subjected to phage infestations. In L-glutamic acid fermentions using acetic acid, the phage infestations of the organisms have been recently recognized. In efforts to elucidate the sources of phage contamination involved in the abnormal fermentation, a series of study was conducted to isolate the phages both from the contents of abnormally fermented tanks and the soil or sewage samples from the surroundings of a fermentation factory, to define major charateristics of the phage isolates, and finally to determine the correlation between the phage isolates and temperate phages originating from the miscellaneous bacterial species isolated from the soil or sewage samples. The results are summarized as follows; 1) All phages were isolated from the irregular fermentation tanks and soil or sewage samples, and they were designated as phage PR-1, PR-2, PR-3, PR-4, PR-5, PR-6, and PR-7, in the order of isolation. These PR-series phages were proved to be highly specific for the variant strains of Br. lactofermentum only, namely, phage PR-1 and PR-2 for Br. lactofermentum No. 468-5 and phage PR-3~PR-7 for Br. lactofemrentum No. 2256. By cross-neutralization test, the 7 phagescould be subdivided into 3 groups, i. e., phage PR-I and PR-2 the first, phage PR-3, PR-4, PR-5, PR-6 the second, and the phage PR-7 the third. 2) The 7 phages were virulent under the experimental conditions. They produced plaques with clear and relatively sharp margins without distinct halo. The mean sizes of plaques were 1.5mm in diameter for phage PR-1 and PR-2, and 1. Omm for phages PR-3~PR-7. Double layer technique modified by Hongo and described by Adams, was applied to assay of the PR-series phages. The factors influencing the plaques were as follows;young age cells of host bacteria cultured for 3-6 hours represented the largest number and size, optimum was pH 7.0, incubation temperature was $30^{\circ}C$, and agar concentration and amount of overlayer medium were 0.6% and 0.2ml, respectively. 3) PR-series phages were stable in 0.05M tris buffer and 0.1M ammonium acetate buffer solution. The addition of $5{\times}10^{-3}M$ magnesium ion effectively increased the stability. Thermostability experiments indicated that PR-series phages were stable at the teinperture between $50^{\circ}{\sim}55^{\circ}C$ in nutrient medium, $45^{\circ}{\sim}50^{\circ}C$ in buffer solution. However, the phages mere completely inactivated at 603C and 65$^{\circ}$C within 10 minutes. The phages were stable at the range of pH6~9 in nutrient medium and of pH 8-9 in buffer solution, respectively. Exposure of the phages to UV for 25, 60 and 100 seconds resulted in the complete loss of infectivily, respectively. 4) Electron microscopy showed that PR-series phage particles exhibited rather similar morphology, differing in the size All of PR-series phages had a multilateral head and had a simple long tiil about three to five times long as compared with head. By the size, phage PR-1 and PR-2, PR-3, PR-4, PR-5, and PR-6 and PR-7 were classified into same groups, respectively. The head and tail size of phage PR-1, PR-5, PR-5(T) and PR-7 were 85nm, 74nm and 235nm and 350mm, and 72nm and 210nm, respectively. 5) Nucleic acids of PR-series phages were double stranded DNA. The G+C contents of phage PR-1, PR-5 and PR-7 were 56.1, 52.9 and 53.7, respectively. The values of G+C contents derived from the $T_m$ were in agreement with the chemically determined values. 6) PR-series phages effectively adsorbed on their host bacteria at the rate of more than 90% during 5 min. K value for phage PR-1, PR-5 and PR-7 were calculated to be $6{\times}10^9 ml$ per minute, respectiveky. The pH of the medium did effect adsorption rate, but both temperature and age of host cells did not. Generally, optimum adsorption condition of phages seemed to be almost same as optimum growth conditions of host bacteria. 7) In one-step growth experiments, the latent periods at $30^{\circ}C$ for PR-1, and PR-7 were about 70, 50 and 55 min, respectively. The corresponding average burst size was 200, 70 and 90, respectively. Lpsis period according to the multiplicity of infection and a phage series. In case of m. o. i. 100, strain No. 2256 (PR-5) and No. 468-5(PR-1) failed to grow and turbidity decreased after 50 and 70min, respectively. 8) In the lysate of a plaque purified phage PR-5 infected bacteria, there observed 2 types ofphage particles, i. e., phage PR-5 and PR-5 (T) of similar morphology but differing at the length of phage tail, and phage tail like particles. The phage taillike particles could be divided into 4 types by the length. Induction experiments of Br. lactofermentum with UV irradiation, mitomycin C or bacitracin treatment produced neither phage PR-5 (T) or phage tail-like particles. 9) No lysis occured when the growth of 7 strains of miscellaneous bacteria, isolated from soil and sewage samples, were inoculated with either phage PR-5 (T) or phage tail-like particles the inoculation of phage PR-5 pellet resulted in the growth inhibition of the orgainsms in the spot test. The lysates obtained from 3 miscellaneous soil derived bacteria following mitomycin C treatment the growth of Br. lactofermentum, but did not lyze the bacterium.

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