Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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A Study of Pore Formation of AAO Film on Si Substrate with Optimizing Process

Si 기판에 제작된 AAO 박막의 기공 형성 최적화에 관한 연구

  • 권순일 (충주대학교 전자공학과) ;
  • 양계준 (충주대학교 전자공학과) ;
  • 송우창 (충주대학교 BINT 신기술연구소) ;
  • 이재형 (군산대학교 전자정보공학부) ;
  • 임동건 (충주대학교 전자공학과)
  • Published : 2008.05.01
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Abstract

AAO films were fabricated on two kinds of substrates such as $Al/SiO_2/Si$ and Al/Ni/Ti/Si. To obtain well-aligned AAO film, we optimized process condition for buffer layer, electrolyte and voltage. In the case of oxalic acid, the AAO film with pore size of approximately 45 nm was obtained at voltage of 40 V, temperature of $10^{\circ}C$, oxalic acid of 0.3 M and widening time of 60 min. Then the thickness of barrier is less than 600 nm. In the case of sulfuric acid, the AAO film has pore size of 40 nm and barrier thickness of 400 nm with optimum conditions such as voltage of 25 V, temperature of $8^{\circ}C$, sulfuric acid of 0.3 M and widening time of 60 min.

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