The characteristic of interface layer and the effect of bias voltage on the microstructure of c-BN films were studied in the microwave plasma hot filament C.V.D process. c-BN films were deposited on a high speed steel(SKH-51) substrate by hot filament CVD technique assisted with a microwave plasma to develop a high performance of resistance coating tool. c-BN films were obtained at a gas pressure of 20 Torr, vias voltage of 300 V and substrate temperature of $800^{\circ}C$ in $B_2H_6-NH_3-H_2$ gas system. It was found that a thin layer of hexagonal boron nitride(h-BN) phase exists at the interface between c-BN layer and substrate.

Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFO-poss(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of $O_2$ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during $O_2$ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr $O_2$ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of $250\;cd/m^2$, respectively. The CIE color coordinates are ranged $X\;=\;0.13{\sim}0.18$ and $Y\;=\;0.10{\sim}0.16$, showing blue color. emission.

Al-doped ZnO (AZO) films were deposited on the plastic substrate by inductively coupled plasma (ICP) assisted DC magnetron sputtering. The AZO films were produced by sputtering a metallic target (Zn/Al) in a mixture of argon and oxygen gases. AZO films with an electrical resistivity of ${\sim}10^3\;{\Omega}cm$ and an optical transmittance of 80% were obtained even at a low deposition temperature. In-situ process control methods were used to obtain stable deposition conditions in the transition region without any hysteresis effect. The target voltage was controlled either at a constant DC power. It was found that the ratio of the zinc to oxygen emission intensity, I (O 777)/I (Zn 481) decreased with increasing the target voltage in the transition region. The $Ar/O_2$ plasma treatment improve the adhesion strength between the polycarbonate substrate and AZO films.

The effects of negative carbon ion beam energy on the bonding configuration, hardness and surface roughness of DLC film prepared by a direct metal ion beam deposition system were investigated. As the negative carbon ion beam energy increased from 25 to 150 eV, the $sp^3$ fraction of DLC films was increased from 32 to 67%, while the surface roughness was decreased. The films prepared at 150 eV showed the more flat surface morphology of the film than that of the film prepared under another ion beam energy conditions. Surface roughness of DLC film varied from 0.62 to 0.22 nm with depositing carbon ion beam energy. Surface nano-hardness increased from 12 to 57 Gpa when increasing the negative carbon ion beam energy from 25 to 150 eV, and then decreased when increasing the ion beam energy from 150 to 200 eV.

In this work, comparative studies on microstructure and mechanical properties between $Mo_2N$ and Mo-Si-N coatings were conducted. Ternary Mo-Si-N coatings were deposited on AISI D2 steel substrates by a hybrid method, where AIP technique was combined with a magnetron sputtering technique. Instrumental analyses of XRD, HRTEM, and XPS revealed that the Mo-Si-N coatings must be a composite consisting of fine $Mo_2N$ crystallites and amorphous $Si_3N_4$. The hardness value of Mo-Si-N coatings significantly increased from 22 GPa of $Mo_2N$ coatings to about 37 GPa with Si content of 10 at.% due to the refinement of $Mo_2N$ crystallites and the composite microstructure characteristics. The average friction coefficient of the Mo-Si-N coatings gradually decreased from 0.65 to 0.4 with increasing Si content up to 15 at.%. The effects of Si content on microstructure and mechanical properties of Mo-N coatings were systematically investigated.

The codeposition behavior of WC particles from an additive-free nickel sulfate and sulfamate solution has been investigated. Electroplating of Ni/WC composites was carried out at different current density with variation of WC particle size. The Guglielmi adsorption mechanism is applied to the electroplating of the fine WC in Ni matrix. The contents of WC in Ni composite coating were increased both by increasing current density and WC concentration in the bath. The hardness of Ni/WC composite coating at low current density is higher than that at high current density since finer WC particles dispersed through the coating. The codeposition behaviors of Co coated WC particles were also investigated. Conducting layer of particles promoted the codeposition behavior of Ni/WC-Co composite coatings.

A set of Quartz Crystal Microbalances (QCM's) was used to observe the film removal characteristics of three different $CO_2-nitric$ acid microemulsions. QCM's electroplated with nickel or copper were used as specimens. F-AOT, NP-4 and the newly synthesized Proline Surfactant-1 were used as surfactants to create microemulsions. While the F-AOT microemulsion yielded a relatively low removal rate, that of the Proline Surfactant-1 completely removed the Cu metal film within a short period of time. The NP-4 microemulsion removed the metal surface. However, removal rate measurements per QCM were not possible due to the instability of the microemulsion when Cu ions were present in the nitric solution. The reaction kinetics and metal removal capabilities of microemulsions formed by the different surfactants are explained along with the characteristics of reverse micelles.

The high velocity oxy-fuel sprayed coatings of 38Ni-23Co-20Cr-11Al-3Y-5Ta, 25Ni-34Co-20Cr-11Al-3Y-2Re and 32Ni-34.5Co-22Cr-11Al-0.5Ir (in wt%) were oxidized at 1000 and $1100^{\circ}C$ in air in order to find the alloying effect of Ta, Re and Ir on the oxidation properties of the NiCoCrAlY-base coatings. The primary phase of the coatings was $Ni_3Al$. The oxides formed on the coatings consisted primarily of ${\alpha}-Al_2O_3$, together with some $CoCr_2O_4,\;CoAl_2O_4$, and $Al_5Y_3O_{12}$. Tantalum oxidized to $Ta_2O_5$ and $Ta_2O_{22}$. However, no oxides of Re and Ir were detected by XRD owing to their thermodynamic inertness and/or their small amount.

Process window for infinite etch selectivity of silicon nitride $(Si_3N_4)$ layers to ArF photoresist (PR) was investigated in dual frequency superimposed capacitive coupled plasma (DFS-CCP) by varying the process parameters such as low frequency power $(P_{LF})$, $CH_2F_2$ and $H_2$ flow rate in $CH_2F_2/H_2/Ar$ plasma. It was found that infinite etch selectivities of $Si_3N_4$ layers to the ArF PR on both blanket and patterned wafers can be obtained for certain gas flow conditions. The etch selectivity was increased to the infinite values as the $CH_2F_2$ flow rate increases, while it was decreased from the infinite etch selectivity as the $H_2$ flow rate increased. The preferential chemical reaction of the hydrogen with the carbon in the polymer film and the nitrogen on the $Si_3N_4$ surface leading to the formation of HCN etch by-products results in a thinner steady-state polymer and, in turn, to continuous $Si_3N_4$ etching, due to enhanced $SiF_4$ formation, while the polymer was deposited on the ArF photoresist surface.

A novel internal-type linear inductive antenna, which we refer to as a double comb-type antenna, was developed for a large-area plasma source with substrate size of $880\;mm{\times}660\;mm$ ($4^{th}$ generation glass size). In this study, effect of plasma confinement by applying multi-polar magnetic field was investigated. High density plasmas of the order of $3.18{\times}10^{11}\;cm^{-3}$ could be obtained with a pressure of 15 mTorr Ar at an inductive power of 5000 W with good plasma stability. This plasma density is higher than that obtained for the conventional double comb-type antenna, possibly due to the plasma confinement, low rf voltage, resulting in high power transfer efficiency. Also, due to the remarkable reduction in the antenna rf voltage and length, a plasma uniformity of less than 3% could be obtained within a substrate area of $880\;mm{\times}660\;mm$ as rf power increased.