Due to the inherently poor adhesion strength of Cu-based leadframe/EMC (Epoxy Molding Compound) interface, popcorn cracking of thin plastic packages frequently occurs during the solder reflow process. In the present work, in order to enhance the adhesion strength of Cu-based leadframe/EMC interface, black-oxide layer was formed on the leadframe surface by chemical oxidation of leadframe, and then oxidized leadframe sheets were molded with EMC and machined to form SDCB (Sandwiched Double-Cantilever Beam) and SBN (Sandwiched Brazil-Nut) specimens. SDCB and SBN specimens were designed to measure the adhesion strength between leadframe and EMC in terms of critical energy-release rate under quasi-Mode I ($G_{IC}$ ) and mixed Mode loading ($G_{C}$ /) conditions, respectively. Results showed that black-oxide treatment of Cu-based leadframe initially introduced pebble-like X$C_2$O crystals with smooth facets on its surface, and after the full growth of $Cu_2$O layer, acicular CuO crystals were formed atop of the $Cu_2$O layer. According to the result of SDCB test, $Cu_2$O crystals on the leadframe surface did not increase ($G_{IC}$), however, acicular CuO crystals on the $Cu_2$O layer enhanced $G_{IC}$ considerably. The main reason for the adhesion improvement seems to be associated with the adhesion of CuO to EMC by mechanical interlocking mechanism. On the other hand, as the Mode II component increased, $G_{C}$ was increased, and when the phase angle was -34$^{\circ}$, crack Kinking into EMC was occured.d.

Helicon sources are attractive for plasma processing because they provide high plasma density in low magnetic fields. Helicon waves were excited by a Nagoya type III antenna in a magnetized plasma column. Plasma parameters were measured with a double probe, and the structure and adsorption of the helicon wave fields were determined with the probes. Argon is fed through a MFC (mass flow controller) for operation pressure of 10~110 mtorr. A 13.56 MHz r.f. power of 50~450 W is induced through the antenna. The plasma density and electron temperature are measured as functions of external magnetic field, r.f. power and pressure. The plasma density as functions of r.f. power and magnetic field at a constant pressure increased linearly, and the electron temperature did not change largely with various operation parameters and the value was around 5~7 eV.

PDP용 적색형광체는 penning가스(Ne 및 5% Xe혼합가스)에 의해 방출되는 147nm파장에서 쉽게 여기되어 논은 양자효율을 주는 물질로 이루어지는데 본 실험은 발광효율을 높이기 위하여 $Y_2$$O_3$:Eu, $(Y,Gd)_2$$O_3$:Eu 및 $(Y,Cd)BO_3$:Eu를 공침법으로 합성하여 부활제인 $Bu^{3+}$ /의 농도, Flux첨가에 따른 미시조직의 변화등을 여기 방출 스펙트럼을 통해 발광효율을 조사하여 다음과 같은 결론을 얻었다. $Y_2$$O_3$:Eu 형광체 합성시 최적조정은 $Y_2$$O_3$에 대한 $Eu_2$$O_3$의 몰비는 5:1, $BaCO_3$ 첨가시 몰비는 15:1로 나타났으며 2차 소성시 $1200^{\circ}C$이상에서 1~3$\mu\textrm{m}$의 구형입상이 형성되었으며 입자의 크기, 형상은 발광특성에 영향을 미쳤다. 또 $Eu^{ 3+}$ 농도는 7wt%가 최적조건으로 나타났다.

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) substrate have been deposited by a dc reactive magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by the ratio of oxygen partial pressure. As the experimental results, the excellent ITO films are prepared on PET substrate at the operating conditions as follows : operating pressure of 5 mTorr, target-substrate distance of 45mm, do power of 20~30W, and oxygen gas ratio of 10%. The optical transmittance is above 80% at 550 nm, and the sheet resistance and resistivity of films are 24 Ω/square and $1.5\times$10$^{-3}$ Ωcm, respectively.

급속히 발전하고 있는 EPS 기술에 사용되고 있는 조화센서의 제조에 대해 연구하였다. 연구의 중점은 기본적으로 EPS 시스템에 사용되는 센서물질의 자성적 특성에 두었다. 조화 센서로서 사용되기 위한 주요 특징으로는 자기 이방성이 거의 0인 특서에서 기이나는 B-H곡선에서의 비선형성이다. 이와 관련하여 높은 신호를 발생하기 위한 자벽의 움직임과 자장열처리에 관하여 기술하였다.

Insoluble anodes of the Ta/Ir mixed metal oxide for electrodeposition of Ni-W alloy in ammoniacal citrate bath were prepared by thermal decomposition method. Ti plate was etched in boiling oxalic acid solution and coated with ethanol solution of $TaCl_{5}$ and $IrCl_4$ mixed in a fixed ratio, followed by drying and treating at various temperatures. The coating layer of these insoluble anode was characterized by SEM, EDX, XRD and DSC. The decomposition rate of citric acid in plating bath was determined by measuring the $CO_2$ gas evolved at the anodes with Gas Chromatography. Evolution of $CO_2$ gas from Ta/Ir oxide anodes decreased about 5% compared with that of Pt. The $CO_2$ gas evolution was increased with the amount of Ir-oxide in the coatings. The coatings which have more than 40% ratio of Ta content and heat-treated at the temperature higher than $400^{\circ}C$ showed better efficiency

We have explored the factors affecting the resistivity of Cu (Mg) alloy, which was prepared by sputtering. The results show that the resistivity is a function of Mg content, annealing temperature, annealing time, and Cu-alloy thickness. Addition of Mg to copper increases the resistivity through solute scattering. In addition, increasing Mg content promotes the interfacial reaction between Mg and SiO$_2$ to produce the free silicon and the generated free silicon dissolves into copper, resulting in a significant increase of resistivity. Furthermore, increasing oxidation temperature rapidly decreases the resistivity at the initial stage of oxidation and then continues to increase the resistivity to the saturation value with increasing oxidation time. The saturation value depends on the residual Mg content and the thickness of the alloy. TEM and AES analyses reveal that dense, uniform MgO grows to the limiting thickness of about $150\AA$. However, interfacial MgO does not show the limiting thickness, instead continues to grow until Mg is completely exhausted. From these facts, we proposed the maximum available Mg content needed to from the dense MgO on the surface and suppress the excessive interfacial reaction.

Silicides have been used extensively in ULSI logic device fabrication as contact materials for the active areas as well as the poly- Si gates. NiSi is a promising candidate for submicron device application due to less volume expansion, low formation temperature, little silicon consumption, and large stable processing temperature window. In this report, the microstructure of nickel silicides fabricated with a thermal evaporator has been investigated. We observed systematic transformation of Ni silicides of $Ni_2$Si, NiSi, $NiSi_2$, as annealing temperature increases. All the silicides have been identified by a X-ray diffractometer (XRD). The cross-sectional microstructure of silicides was examined by a transmission electron microscope (TEM) equipped with a energy dispersive spectrometer(EDS). The surface roughness of silicides was measured by scanning probe microscope(SPM). Although we observed thin oxide layer existed at the $Ni/NiSi_{x}$ interface, we fabricated successfully $550\AA$-thick planar Ni-monosilicide at the temperature range of$ 400~700^{\circ}C$.

Ceramic is select for an alternative substrate material for high-speed circuits due to its low-thermal expansion. As, in this study, ceramic was prepared by ISG (interlayer sol-gel) process using metal salts and a metal alkoxide as the starting materials. Generally ceramic substrate is used electroless copper plating for the metallization. But it has been indicate weakely the adhesion strength between the substrate and copper layer. Therefore, this research, using the ISG process on the preparation of homogeneous and possible preparation at law temperature fabricated sol solution. Using of the dip coating method was coated for the purpose of giving the anchoring effect on the coating layer and enhancing the adhesion strength between the $Al_2$O$_3$ substrate and copper layer. This study examined primary the characteristic of the sol making condition and differential thermal analysis (DTA) X-ray diffraction (XRD) were mearsured to identify the crystal phase of heat treatment specimens. The morphology of the coated films were studied by scanning electron microscopy(SEM). As a resurt, XRD analysis was obtained patterns of $\alpha$-cordierite after heat-treatment about 2 hours at $1000^{\circ}C$. SEM analysis could have seen a large number of voids on coated film. The more contants of$ Al_2$$O_3$ Wt% was increased the more voids was advanced. Peel adhesion strength has a maximum in the contants of the TEOS:ANE of 1:0.7 mole%. In this case, adhesion strength has been measured 1150gf, peel adhesion strength were about 10 times more than uncoated of the ceramics film.