This paper represents a new type low power High Frequency technological ion source (HF TIS) for ion - beam processing: the surface modification of materials, cleaning of surface, sputtering, coating of thin films, and polishing. The operational principle of HF TIS is based on the excitation of electrostatic waves in plasma located in the external magnetic field. Low power HF TIS with diameter 92 rom gives the opportunity to obtain beams of inert and chemically reactive gases with currents range from 5 to 150 mA (current density $0.015\;~\;3.5\;mA/\textrm{m}^2$) and ion beam energy 100 ~ 2500 eV at a HF power level 10 ~ 150 W. Three grid concave type ion optical system (IOS) is used for extraction and formation ofion beam.n beam.

Recently, the role of the surface analysis on the development of advanced materials has become larger and larger as the surface compositions of these materials is the key of their performances. Especially three techniques, Auger electron spectroscopy, X- ray photoelectron spectroscopy and secondary ion mass spectroscopy are widely used in technology fields. However, because of the relatively short history of these techniques(thirty years or so), there has been no accumulation of data commonly available, physical parameters for analysis have not been established and there has been no standard data. With these background, the VAMAS projects which aims to standardize the manner in the field of these techniques has started in 1982 at Versailles Summit. Along the projects, we have conducted the international collaborating study on the sharing of spectral data. In 1994, the Science and Technology Agency of Japan began the project on computer network, on which our fruits from the study on spectral data sharing is boarded.(omitted)mitted)