• Special Issue of the Society of Naval Architects of Korea
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• 2013.12a
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• pp.73-80
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• 2013

From broad point of view, seam tracking has been one of main issues with respect to welding automation. Several attempts have been successful for seam tracking of fixed weaving width. As a solution of the seam tracking methods for varying groove width, the visual sensors such as CCD cameras have been adopted. Although the vision sensing techniques can achieve high accuracy, the weak point is that well-prepared vision sensor environment should be required to obtain high-quality visual measurements which can be easily affected by significant noises in industrial areas. This paper proposed an alternative seam tracking algorithm for narrow groove. A special measurement device for arc voltage, in this study, is developed to enhance the reliability of the measured welding signals. Based on the developed arc sensor algorithm, an automatic weld-width tracking algorithm is also proposed, which is able to predict the weld-position more accurately. The usefulness of the automatic weld-width tracking algorithm was well verified by applying it to gas tungsten arc welding (GTAW).

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.2753-2758
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• 2003

Tactile sensation is essential for many manipulation and exploration tasks not only in a real environment but also in a virtual environment. In this paper, we discuss a conceptual design of an integrated tactile display system. The system comprises two parts: a 2 DOF force feedback device for kinesthetic display and a tactile feedback device for displaying the normal stimulation to skin and the skin slip/stretch. Psychophysical experiments measure the effects of fingerpad selection, the direction of finger movements and the texture width on tactile sensitivity. We also investigate characteristics of lateral finger movement while subjects perceive different textures. From the experimental results, the principal parameters for designing a tactile display are suggested. A tactile display device is implemented using eight piezoelectric bimorphs and a linear actuator, and is attached to a 2 DOF translational force feedback device to simultaneously simulate texture and stiffness of the object.

• Journal of the Microelectronics and Packaging Society
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• v.27 no.1
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• pp.31-35
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• 2020

This study demonstrates metal-oxide based memtransistor device and the gate tunable memristive characteristic using atomic layer deposition (ALD) and ZnO n-type oxide semiconductor. We fabricated a memtransistor device having channel width 70 ㎛, channel length 5 ㎛, back gate, using 40 nm thick ZnO thin film, and measured gate-tunable memristive characteristics at each gate voltage (50V, 30V, 10V, 0V, -10V, -30V, -50V) under humidity of 40%, 50%, 60%, and 70% respectively, in order to investigate the relation between a memristive characteristic and hydrogen doping effect on the ZnO memtransistor device. The electron mobility and gate controllability of memtransistor device decreased with an increase of humidity due to increased electron carrier concentration by hydrogen doping effect. The gate-tunable memristive characteristic was observed under humidity of 60% 70%. Resistive switching ratio increased with an increase of humidity while it loses gate controllability. Consequently, we could obtain both gate controllability and the large resistive switching ratio under humidity of 60%.

• Proceedings of the KIPE Conference
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• 2000.07a
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• pp.605-609
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• 2000

This paper presents a development of the Pulse Width Modulation ASIC for control of the AC servo or spindle motor in machine tools. The ASIC is designed two PWM functions for simultaneous control of a converter and an inverter. Also the device includes additionally two UART functions for interfacing the RS232C with PC or other devices. The device is connected to the microprocessor of Intel or Motorola by bus interface. The required output voltage and frequency for the motor control is programmed to the PWM block and the corresponding switching signals are calculated and generated with regard to the programmed value.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.555-558
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• 2009

This paper presents a step-down converter IC for automotive applications. This device was designed for a 40 V/1 A high-power output for voltage reference of automotive IC. It provides 250kHz PWM (pulse width modulation) and PFM(pulse frequency modulation) according to load conditions. This device was simulated spectre of IC-design-tools and fabricated Dong-bu Hitec 0.35um BD350BA process.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.208-211
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• 1999

Abstract - Electrical characteristics or asymmetric n-MOSFET's with different source and drain geometry are experimently investigated using test structures having various gate width. Saturation drain current and resistance in linear region are estimated by a simple schematic model, which consists of conventional device having parasitic resistor. A comparison of experimental results of symmetric and asymmetric devices gives the parasitic resistance caused by abnormal device structure. The suggested model shows good agreement with the measured drain current for both forward- and reverse-modes.

• The Transactions of the Korean Institute of Power Electronics
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• v.27 no.1
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• pp.56-62
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• 2022

In this paper, the effect of pulse width modulation methods on thermal loadings and power losses of single-phase five-level NPC inverters for photovoltaic systems are analyzed. The pulse width modulation methods affect the power losses of the NPC inverters and thus lead to different thermal loadings of NPC inverters. To identify the reliability-critical power device with respect to thermal stress, the thermal loadings of I- and T-type NPC inverters are analyzed by applying the unipolar pulse modulation method. Then, the effect of the discontinuous pulse width modulation method on power losses and thermal loadings of power devices of I- and T-type NPC inverters are analyzed. Finally, the operation of NPC inverters applying the discontinuous pulse modulation method is confirmed by experiments. The results show that the discontinuous pulse modulation method is able to improve the reliability of NPC inverters by reducing thermal loadings of reliability-critical power devices and it is more effective for T-type NPC inverters than I-type NPC inverters.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1407-1410
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• 2007

This work reports on three primary color fluorescent white organic light emitting diode (WOLED) with simple device structure where only a part of the hole transporting layer was doped with dye. The maximum luminance of the device reaches $35000\;cd/m^2$ at a drive voltage below 11V and external quantum efficiency of the device is above 1% in the wide range of luminance from 10 to $35000\;cd/m^2$ and reaches its highest 1.6% at $500\;cd/m^2$. The chromaticity coordinate shift of the device is negligible in this wide range of luminance. The blue shift of emission color with an increase of current density was attributed to the narrowing of recombination zone width with raise of current density.

• Composites Research
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• v.15 no.4
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• pp.23-31
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• 2002

The two dimensional size effect of specimen gauge section ($length{\;}{\times}{\;}width$) was investigated on the compressive behavior of a T300/924 $\textrm{[}45/-45/0/90\textrm{]}_{3s}$, carbon fiber-epoxy laminate. A modified ICSTM compression test fixture was used together with an anti-buckling device to test 3mm thick specimens with a $30mm{\;}{\times}{\;}30mm,{\;}50mm{\;}{\times}{\;}50mm,{\;}70mm{\;}{\times}{\;}70mm{\;}and{\;}90mm{\;}{\times}{\;}90mm$ gauge length by width section. In all cases failure was sudden and occurred mainly within the gauge length. Post failure examination suggests that $0^{\circ}$ fiber microbuckling is the critical damage mechanism that causes final failure. This is the matrix dominated failure mode and its triggering depends very much on initial fiber waviness. It is suggested that manufacturing process and quality may play a significant role in determining the compressive strength. When the anti-buckling device was used on specimens, it was showed that the compressive strength with the device was slightly greater than that without the device due to surface friction between the specimen and the device by pretoque in bolts of the device. In the analysis result on influence of the anti-buckling device using the finite element method, it was found that the compressive strength with the anti-buckling device by loaded bolts was about 7% higher than actual compressive strength. Additionally, compressive tests on specimen with an open hole were performed. The local stress concentration arising from the hole dominates the strength of the laminate rather than the stresses in the bulk of the material. It is observed that the remote failure stress decreases with increasing hole size and specimen width but is generally well above the value one might predict from the elastic stress concentration factor. This suggests that the material is not ideally brittle and some stress relief occurs around the hole. X-ray radiography reveals that damage in the form of fiber microbuckling and delamination initiates at the edge of the hole at approximately 80% of the failure load and extends stably under increasing load before becoming unstable at a critical length of 2-3mm (depends on specimen geometry). This damage growth and failure are analysed by a linear cohesive zone model. Using the independently measured laminate parameters of unnotched compressive strength and in-plane fracture toughness the model predicts successfully the notched strength as a function of hole size and width.

• Journal of Applied Reliability
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• v.10 no.1
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• pp.65-71
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• 2010

NAND-type SONOS with a separated double-gate FinFET structure (SDF-Fin SONOS) flash memory devices are proposed to reduce the unit cell size of the memory device and increase the memory density in comparison with conventional non volatile memory devices. The proposed memory device consists of a pair of control gates separated along the direction of the Fin width. There are two unique alternative technologies in this study. One is a channel doping method and the other is an oxide thickness variation method, which are used to operate the SDF-Fin SONOS memory device as two-bit. The fabrication processes and the device characteristics are simulated by using technology comuter-adided(TCAD). The simulation results indicate that the charge trap probability depends on the different channel doping concentration and the tunneling oxide thickness. The proposed SDG-Fin SONOS memory devices hold promise for potential application.