• Journal of Communications and Networks
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• v.5 no.4
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• pp.290-302
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• 2003

Ultra wide band (UWB) radio has recently attracted increased attention due to its expected unlicensed operation, and potential to provide very high data rates at relatively short ranges. In this article we briefly describe some main candidate multiple access and modulation schemes for UWB communications, followed with their power spectral density calculation and properties. We also present some illustrative capacity results, and provide a discussion of the impact of network topology on multiple access capacity.

• Journal of Power Electronics
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• v.18 no.4
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• pp.985-996
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• 2018

The implementation and performance evaluation of an interleaved boundary conduction mode (BCM) boost power factor correction (PFC) converter is presented in this paper by employing three wide band-gap switching devices: a super junction silicon (Si) MOSFET, a silicon carbide (SiC) MOSFET and a gallium nitride (GaN) high electron mobility transistor (HEMT). The practical considerations for adopting wide band-gap switching devices to BCM boost PFC converters are also addressed. These considerations include the gate drive circuit design and the PCB layout technique for the reliable and efficient operation of a GaN HEMT. In this paper it will be shown that the GaN HEMT exhibits the superior switching characteristics and pronounces its merits at high-frequency operations. The efficiency improvement with the GaN HEMT and its application potentials for high power density/low profile BCM boost PFC converters are demonstrated.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.3
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• pp.174-181
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• 2004

In this paper, we review the four receiver architectures and four methods for multi-standard receiver design. Propose reconfigurable RF block can be used for both low-IF and direct conversion architecture. Also, using reconfigurable mixer method, it can be operated at $2{\sim}6$ GHz range for multi-standard receiver. It consists of wideband mixer, filter, and automatic gain control amplifier and to get wide-band operation, $2{\sim}6$ GHz, wide-band mixer use flexible input matching method. Besides, to design multi-standard receiver, LNA bank that support each standard is necessary and it has good performance to compensate the performance of wide-band mixer. Finally, we design and simulate proposed reconfigurable RF block and to prove that it has acceptable performances for various wireless standards, the LNA bank that supports both IEEE 802.11a/b/g and WCDMA is also designed and simulated with it.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.60 no.2
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• pp.53-55
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• 2011

The printed wide band monopole antenna having characteristics of dipole by modified coplanar wave guide(CPW) ground plane is presented. We are called a slot-arm printed monopole antenna and investigated the effect of the surface currents of the radiator on ground plane. The proposed antenna is treated as two asymmetric dipoles with the included angle of $90^{\circ}$ degrees which lie along Z-direction symmetrically. It is observed that the effect of the surface currents on the radiation patterns is similar to that of the corresponding dipole. The length and width of the ground plane correspond the radius and length of the dipole respectively. This approach is also valid to general printed monopole antennas. The simulation impedance bandwidth of the proposed antenna the range of 2.4 to 4.6 [GHz] for a voltage stand wave ratio (VSWR)${\leq}$2 and got pick gain of 6 [dBi]. So the proposed antenna is satisfied the requirement of the industry science medical (ISM) band operation.

• Proceedings of the KSRS Conference
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• 2004.10a
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• pp.467-470
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• 2004

In early 2004, KARI developed 5ft S-Band TT&C antenna for especially KOMPSAT-2 operation in LEOP phase. This paper shows system features of 5ft S-Band antenna and its test result with KOMPSAT-l. Tracking test, command uplink test and telemetry downlink test were performed. Through tests, 5ft antenna was verified to be operational in uplink and downlink with KOMPSAT series. Due to its inherent wide 3dB beam-width of about 7deg at S-Band, this antenna system can be used very effectively even though orbital information is less accurate like LEOP and spacecraft safe mode.

• Journal of the Society of Naval Architects of Korea
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• v.48 no.4
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• pp.299-307
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• 2011

The offshore plants such as FPSO are subjected to combination loading of environmental conditions (swell, wave, wind and current). Therefore the fatigue damage is occurred in the operation time because the units encounter the environmental phenomena and the structural configurations are complicated. This paper is a research for frequency domain fatigue analysis of wide-band random loading focused on accuracy of fatigue damage estimation regarding the proposed methods. We selected ideal bi-modal spectrum. And comparison between time-domain fatigue analysis and frequency-domain fatigue analyses are conducted through the fatigue damage ratio. Fatigue damage ratios according to Vanmarcke's bandwidth parameter are founded for wide-band. Considering safety, we recommend that Jiao-Moan and Tovo-Benasciutti methods are optimal way at the fatigue design for wide-band response. But, it is important that these methods based on frequency-domain unstably change the accuracy according to the material parameter of S-N curve. This study will be background and guidance for the new frequency-domain fatigue analysis development in the future.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.781-787
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• 2004

In this paper, a novel dual and wide band aperture stacked patch antenna for Cellular/PCS/IMT-2000 base station is presented. It consists of single microstrip patch having notches along the radiating patch, two dielectric substrates and a form material. To achieve wide band characteristic, we utilize the coupling effect between the notched patch and the resonant aperture in the ground plane and by properly cutting notches on the patch, an aperture stacked patch antenna could be designed to yield dual frequency operation. By the proper choice of resonant aperture size and height of a foam material, dual and wide band characteristic could be realized the measured impedance bandwidth(1:1.5 VSWR) of designed antenna at lower band(860 MHz) reaches 77 MHz and covers the Cellular CDMA band(824∼894 MHz). The measured impedance bandwidth(1:1.5 VSMR) of the designed antenna at upper band(1,960 MHz) is about 550 MHz and covers both the PCS band(1,750∼l,870 MHz) and the for-2000 band(1,920∼2,170 MHz). Good broadside radiation with high gain(5.65∼7.4 dBi) characteristics have also been observed.

• Journal of IKEEE
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• v.23 no.3
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• pp.917-924
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• 2019

This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5G communication standards employing carrier aggregation (CA). The proposed LNA encompasses a common input stage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operate in both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input and second stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain, wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls the single input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band and intra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation, the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figure and input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNA operates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dB with equally good matching performance. An $IIP_3$ value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.3-6
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• 2004

Power semiconductor devices are being compact, high performance and intelligent thanks to recent remarkable developments of silicon design, process and related packaging technologies. Developments of MOS-gate transistors such as MOSFET and IGBT are dominant thanks to their advantages on high speed operation. In conjunction with package technology, silicon technologies such as trench, charge balance and NPT will support future power semiconductors. In addition, wide band gap material such as SiC and GaN are being studies for next generation power semiconductor devices.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.18 no.3 s.118
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• pp.288-297
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• 2007

The novel internal monopole chip antenna of penta-band operation for GSM850/GSM900/DCS/USPCS/WCDMA bands for mobile phones is proposed. This antenna occupies a small volume $8\times3.2\times20mm^3$ and is suitable to be embedded in a mobile phone as an internal antenna. The minimization of the proposed antenna was realized by using spiral line structure and meander line structure on FR-4 of dielectric$(\varepsilon_r=4.4)$. The designed antenna has the wide-band operation in the upper band by overlapping high order resonances. The measured bandwidth of this antenna (VSWR>3) is 150MHz$(1,030\sim1,180\;MHz)$ in the lower band operation and 650 MHz$(1,760\sim2,410\;MHz)$ in higher band operation. The measured radiation efficiency within bandwidth(VSWR 3:1) is over 50 %. The antenna has been designed by a commercial software HFSS.