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Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
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A Wideband Inductorless LNA for Inter-band and Intra-band Carrier Aggregation in LTE-Advanced and 5G

  • Gyaang, Raymond (Dept. of Information and Communication Engineering, Hanbat National University) ;
  • Lee, Dong-Ho (Dept. of Information and Communication Engineering, Hanbat National University) ;
  • Kim, Jusung (Dept. of Electronics and Control Engineering, Hanbat National University)
  • Received : 2019.08.22
  • Accepted : 2019.09.19
  • Published : 2019.09.30
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Abstract

This paper presents a wideband low noise amplifier (LNA) that is suitable for LTE-Advanced and 5G communication standards employing carrier aggregation (CA). The proposed LNA encompasses a common input stage and a dual output second stage with a buffer at each distinct output. This architecture is targeted to operate in both intra-band (contiguous and non-contiguous) and inter-band CA. In the proposed design, the input and second stages employ a gm enhancement with resistive feedback technique to achieve self-biasing, enhanced gain, wide bandwidth as well as reduced noise figure of the proposed LNA. An up/down power controller controls the single input single out (SISO) and single input multiple outputs (SIMO) modes of operation for inter-band and intra-band operations. The proposed LNA is designed with a 45nm CMOS technology. For SISO mode of operation, the LNA operates from 0.52GHz to 4.29GHz with a maximum power gain of 17.77dB, 2.88dB minimum noise figure and input (output) matching performance better than -10dB. For SIMO mode of operation, the proposed LNA operates from 0.52GHz to 4.44GHz with a maximum voltage gain of 18.30dB, a minimum noise figure of 2.82dB with equally good matching performance. An $IIP_3$ value of -6.7dBm is achieved in both SISO and SIMO operations. with a maximum current of 42mA consumed (LNA+buffer in SIMO operation) from a 1.2V supply.

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References

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