• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.443-449
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• 2018

We investigated the temperature-dependent photoluminescence spectroscopy of colloidal InZnP/ZnSe/ZnS (core/shell/shell) quantum dots with varying ZnSe and ZnS shell thickness in the 278~363 K temperature range. Temperature-dependent photoluminescence of the InZnP-based quantum dot samples reveal red-shifting of the photoluminescence peaks, thermal quenching of photoluminescence, and broadening of bandwidth with increasing temperature. The degree of band-gap shifting and line broadening as a function of temperature is affected little by shell composition and thickness. However, the thermal quenching of the photoluminescence is strongly dependent on the shell components. The irreversible photoluminescence quenching behavior is dominant for thin-shell-deposited InZnP quantum dots, whereas thick-shelled InZnP quantum dots exhibit superior thermal stability of the photoluminescence intensity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.439-444
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• 2005

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.8
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• pp.637-645
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• 1998

The characteristics of waveguide, electrode and packaging fabricated for acousto-optic tunable filters(AOTF) used for optical communications were analyzed. A $Ti:LiNbO_3$in-diffusing method was employed for the formation of the optical waveguide with a dimension of width $8{\mu}m$, length $30000-50000{\mu}m$ and varying the thickness. The diffusion was carried at $1050^{\circ}C$ for 8 hours to pattern the optical waveguide. The resulted waveguide exhibited a single mode at 1550nm optical wavelength. The width of IDT, with 10 SAM periods, was $5000{\mu}m$ . Impedances of the electrodes deposited with Au were analyzed using a network analyzer; $48.1\Omega$ at the center frequency of 193MHz for electrode thickness of $1500{\AA}$ and $50.7\Omega$ at the center frequency of 192MHz for $1600\AA$. And the characteristics of packaged AOTF was analyzed. When the electrical frequency 177.1MHz was applied to the device, the mode conversion efficiency was measured as 63% at the optical wavelength 1515nm.

• Geomechanics and Engineering
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• v.12 no.2
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• pp.257-267
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• 2017

This paper presents laboratory investigation of stabilization of subgrade soil. One type of soil and three types of stabilizers i.e., hydrated lime, class F fly ash and polypropylene fibres are selected in the study. Atterberg limit, compaction, california bearing ratio (CBR), unconfined compressive strength and triaxial shear strength tests are conducted on unstabilized and stabilized soil for varying percentage of stabilizers to analyze the effect of stabilizers on the properties of soil. Vertical compressive strains at the top of unstabilized and stabilized subgrade soil were found out by elasto-plastic finite element analysis using commercial software ANSYS. Strategy for design of optimum pavement section was based on extension in service life (TBR) and reduction in layer thickness (LTR). Extension in service life of stabilized subgrade soil is 6.49, 4.37 and 3.26 times more due to lime, fly ash and fibre stabilization respectively. For a given service life of the pavement, there is considerable reduction in layer thicknesses due to stabilization. It helps in reduction in construction cost of pavement and saving in natural resources as well.

• Journal of the Semiconductor & Display Technology
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• v.18 no.3
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• pp.100-104
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• 2019

We have investigated the feasibility of fabricating fine stripes using needle coating for potential applications in solution-processed organic light-emitting diodes (OLEDs). To this end, we have employed an aqueous poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) solution that has been widely used as a hole injection layer (HIL) of OLEDs and performed needle coatings by varying the process parameters such as the coating gap and coating speed. As expected, the stripe width is reduced with increasing coating speed. However, the central thickness of the stripe is rather increased as the coating speed increases, which is different from other coating processes such as slot-die and blade coatings. It is due to the fact that the meniscus formed between the needle tip and the substrate varies depending sensitively on the coating speed. It is also found that the stripe width and thickness are reduced with increasing coating gap. To demonstrate its applicability to OLEDs, we have fabricated a red OLED stripe and obtained light emission with the width of about 90㎛.

• Bulletin of the Korean Chemical Society
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• v.34 no.5
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• pp.1462-1466
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• 2013

We demonstrate that ruthenium oxide ($RuO_2$) nanotubes with controlled dimensions can be synthesized using facile electrochemical means and anodic aluminum oxide (AAO) templates. $RuO_2$ nanotubes were formed using a cyclic voltammetric deposition technique and an aqueous plating solution composed of $RuCl_3$. Linear sweep voltammetry (LSV) was used to determine the effective electrochemical oxidation potential of $Ru^{3+}$ to $RuO_2$. The length and wall thickness of $RuO_2$ nanotubes can be adjusted by varying the range and cycles of the electrochemical cyclic voltammetric potentials. Thick-walled $RuO_2$ nanotubes were obtained using a wide electrochemical potential range (-0.2~1 V). In contrast, an electrochemical deposition potential range from 0.8 to 1 V produced thin-walled and longer $RuO_2$ nanotubes in an identical number of cycles. The dependence of wall thickness and length of $RuO_2$ nanotubes on the range of cyclic voltammetric electrochemical potentials was attributed to the distinct ionic diffusion times. This significantly improves the ratio of surface area to mass of materials synthesized using AAO templates. Furthermore, this study is directive to the controlled synthesis of other metal oxide nanotubes using a similar strategy.

• Steel and Composite Structures
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• v.20 no.3
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• pp.513-543
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• 2016

Third order shear deformation theory is used to evaluate electro-elastic solution of a sandwich plate with considering functionally graded (FG) core and composite face sheets made of piezoelectric layers. The plate is resting on the Pasternak foundation and subjected to normal pressure. Short circuited condition is applied on the top and bottom of piezoelectric layers. The governing differential equations of the system can be derived using Hamilton's principle and Maxwell's equation. The Navier's type solution for a sandwich rectangular thick plate with all edges simply supported is used. The numerical results are presented in terms of varying the parameters of the problem such as two elastic foundation parameters, thickness ratio ($h_p/2h$), and power law index on the dimensionless deflection, critical buckling load, electric potential function, and the natural frequency of sandwich rectangular thick plate. The results show that the dimensionless natural frequency and critical buckling load diminish with an increase in the power law index, and vice versa for dimensionless deflection and electrical potential function, because of the sandwich thick plate with considering FG core becomes more flexible; while these results are reverse for thickness ratio.

• Proceeding of EDISON Challenge
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• 2016.03a
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• pp.203-208
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• 2016

In this paper, vibration characteristics in terms of the airfoil cross-sectional shape was examined by using the EDISON co-rotational plane beam-transient analysis. Assuming aircraft wing as a cantilevered beam with a constant cross-sectional shape, natural frequencies of each airfoil shape was compared while varying airfoil maximum thickness and maximum camber length, using Fast Fourier Transformation(FFT). When the airfoil maximum thickness was varied, natural frequency showed peak value at 18% chord, and decreased afterwards. When the airfoil maximum camber length was varied, natural frequency either increased or decreased at 6% chord, while at 8% the natural frequency showed its maximum. Applying such trends to B-737 wing airfoil, an improved B-737_mod airfoil shape was obtained with regard to the vibration characteristics.

• Proceedings of the KIEE Conference
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• 2004.11a
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• pp.183-186
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• 2004

The metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using a metalorganic decomposition (MOD)method. The $CeO_2$ thin films were deposited as a buffer layer on Si substrate and $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the $CeO_2$ layer thickness. The width of the memory window in the capacitance-voltage (C-V)curves for the MFIS structure decreased with increasing thickness of the $CeO_2$ layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the $CeO_2$ film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.23-26
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• 2003

The BLT thin film and MgO buffer layer were fabricated using a metalorganic decomposition method and the DC sputtering technique. The MgO thin film was deposited as a buffer layer on $SiO_2/Si$ and BLT thin films were used as a ferroelectric layer. The electrical of the MFIS structure were investigated by varying the MgO layer thickness. TEM showsno interdiffusion and reaction that suppressed by using the MgO film as abuffer layer. The width of the memory window in the C-Y curves for the MFIS structure decreased with increasing thickness of the MgO layer Leakage current density decreased by about three orders of magnitude after using MgO buffer layer. The results show that the BLT and MgO-based MFIS structure is suitable for non-volatile memory FETs with large memory window.