Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Effect of ZrO2 Buffer Layers for Pt/Bi3.25La0.75Ti3O12/ZrO2/Si (MFIS)-FET Structures

Pt/Bi3.25La0.75Ti3O12/ZrO2/Si (MFIS)-FET 구조를 위한 ZrO2 Buffer Layer의 영향

  • 김경태 (중앙대학교 전자전기공학부) ;
  • 김창일 (중앙대학교 전자전기공학부)
  • Published : 2005.05.01
Download PDF
⟨ Previous Next ⟩

Abstract

We investigated the structural and electrical properties of BLT films grown on Si covered with $ZrO_{2}$ buffer layer. The BLT thin film and $ZrO_{2}$ buffer layer were fabricated using a metalorganic decomposition method. The electrical properties of the MFIS structure were investigated by varying thickness of the $ZrO_{2}$ layer. AES and TEM show no interdiffusion and reaction that suppressed using the $ZrO_{2}$ film as a buffer layer The width of the memory window in the C-V curves for the MFIS structure decreased with increasing thickness of the $ZrO_{2}$ layer. It is considered that the memory window width of MFIS is not affected by remanent polarization. Leakage current density decreased by about four orders of magnitude after using $ZrO_{2}$ buffer layer. The results show that the $ZrO_{2}$ buffer layers are prospective candidates for applications in MFIS-FET memory devices.

Keywords

References

  1. J F. Scott and C. A. Paz de Araujo, 'Ferroelectric memories', Science, Vol. 246, No. 49 36, p. 1400, 1989
  2. 김병호, 윤희성, 정병식, 신동석, 'MOD 법에 의한 강유전성 $Sr_xBi_yTa_2O_{9+\alpha}$ (SBT)박막의 제조 및 후열처리 효과에 관한 연구', 전기전자재료학회논문지,11권,3호, p. 229, 1998
  3. B. K. Moon, H. Ishiwara, E. Tokumitsu, and M. Yoshimoto, 'Characteristics of ferroelectric $Pb(Zr,Ti)O_3$ films epitaxially grown on $ZrO_2$(111)/Si(111) substrates', Thin Solid Films, Vol. 385, No. 1-2, p. 307, 2001 https://doi.org/10.1016/S0040-6090(01)00773-8
  4. Y. T. Kim and D. S. Shin, 'Memory window of $Pt/SrBi_2Ta_2O_9/ZrO_2/Si$ structure for metal ferroelectric insulator semiconductor field effect transistor', Appl. Phys. Lett., Vol. 71, No. 24, p. 3507, 1997
  5. 김병호, 윤희성, 정병식, 신동석, 'MOD 법에 의한 강유전성 $Sr_xBi_yTa_2O_{9+\alpha}$ (SBT)박막의 제조 및 후 열처리 효과에 관한 연구', 전기전자재료학회논문지,11권,3호, .p 229, 1998
  6. 김태훈, 김병호, 송석표, 'MOD 법으로 제조한 강유전성 SBT 박막에서 하부전극이 유전 및 전기적 특성에 미치는 영향', 한국전기전자재료학회논문지, 13권,8호,p 694, 2000
  7. 김정태, 김창일, 권지운, 심일훈, 'MOD 법으로 제작된 $Bi_{3.25}La_{0.75}Ti_3O_{12}$ 박막의 강유전 특성', 전기전자재료학회논문지, 15권, 6호, p. 486, 2002
  8. T. Kijima, Y. Fujisaki, and H. Ishiwara, 'Fabrication and characterization of $Pt/(Bi,La)_4Ti_{13}O_{12}/Si_3N_4/Si$ metal ferroelectric insulator semiconductor structure for FET-type ferroelectric memory applications', Jpn, J. Appl, Phys., Vol. 40, No. 4B, p. 2977, 2001 https://doi.org/10.1143/JJAP.40.2977
  9. H. S. Choi, Y. T. Kim, S. I. Kim, and I. H. Choi, 'Electrical characteristics of $Pt/SrBi_2Ta_2O_9/Ta_2O_5/Si$ using $Ta_2O_5$ as the buffer layer', Jpn. J. Appl. Phys., Vol. 40, No. 4B, p. 2940, 2001
  10. M. B. Lee, T. Ohnishi, T'. Maeda, and M. Kawasaki, 'Growth and characterization of ferroelectric $Pb(Zr,Ti)O_3$ films on interfaZr-controlled $ZrO_2$(111)/Si(111) Structures', Jpn. J. Appl, Phys., Vol. 36, No. 10, p. 6500, 1997
  11. C. K. Maiti, G. K. Dalapati, S. Chatterjee, S. K. Samanta, S. Varma, and S. Patil, 'Electrical properties of high permittivity $ZrO_2$ gate dielectrics on strained-Si', SolidState Electronics, Vol. 48, No. 12, p. 2235, 2004
  12. Lim, M. and Kalkur, T. S., 'Electrical characteristics of Pt-bismuth strontium tantalate BST)-P-Si with zirconium oxide buffer layer', Integr. Ferroelectric, Vol. 14, p. 247, 1996
  13. T. J. Choi, Y. S. Kim, C. W. Yang, and J. C. Lee, 'Electrical properties of $Bi_{3.25}La_{0.75}Ta_3O_{12}$ thin films on Si for a metal-ferroelectricinsulator- semiconductor structure', Appl. Phys. Lett., Vol. 79, No. 10, p. 1516, 2001