• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.385-390
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• 1999

Surface corona discharge characteristics of a dc corona charged ferroelectric pellet barrier have been investigated experimentally. Electric charges stored on the surfaces of the ferroelectric pellets by a dc corona discharge provide partial electric fields on the surfaces of the ferroelectric pellets, which could generate surface corona discharges on the ferroelectric pellets. This system utilizes both the surface discharges on the ferroelectric pellet barrier and the corona discharge between corona tip and mesh electrode. Positive and negative dc voltages were applied to the tip to generate partial discharges, and corona currents were estimated to investigate the buildup charge on ferroelectric pellets as a function of the applied time and the charge relaxation time constants of ferroelectric pellets. As a result, in the case of the negative corona discharge with the ferroelectric pellet barrier, the mean corona current and ozone generation increase greatly, and the surface discharges on the ferroelectric pellets can be fenerated efficiently. It is also found that, charge relaxation time, dielectric constants offerroelectric pellets, polarity of applied voltage and applied time affected to the surface discharges among the ferroelectric pellets.

• The Korean Journal of Ceramics
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• v.5 no.3
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• pp.245-249
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• 1999

A new type of nonthermal plasma reactor utilizing ferroelectric pellets is proposed to generate nonthermal plasma efficiently, which is used for simultaneous control of various pollutant gases. Electric charges stored on ferroelctric pellets by corona discharge between a corona tip and a mesh electrode provide partial electrical discharges among ferroelectric pellets. These partial electrical discharges can enhance partial discharges around the surface of ferroelectric pellets. This method utilizes wide reacting area of ferroelectric pellets and partial discharge. Positive and negative dc voltage are applied to the corona tip to generate partial discharges, and corona currents are estimated to investigate charge storage on ferroelectric pellets as function of time and charge relaxation time constants of ferroelectric pellects. As a result, charge relaxationtime, dielectric constants of ferroelectric pellets, polarity of applied voltage and applied time influence partial discharges among ferroelectric pellect.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.1
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• pp.51-65
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• 2008

The article presents the recent research development in polymer ferroelectric non-volatile memory. A brief overview is given of the history of ferroelectric memory and device architectures based on inorganic ferroelectric materials. Particular emphasis is made on device elements such as metal/ferroelectric/metal type capacitor, metal-ferroelectric-insulator-semiconductor (MFIS) and ferroelectric field effect transistor (FeFET) with ferroelectric poly(vinylidene fluoride) (PVDF) and its copolymers with trifluoroethylene (TrFE). In addition, various material and process issues for realization of polymer ferroelectric non-volatile memory are discussed, including the control of crystal polymorphs, film thickness, crystallization and crystal orientation and the unconventional patterning techniques.

• Transactions on Electrical and Electronic Materials
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• v.15 no.2
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• pp.60-65
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• 2014

This article explains the experimental results of ferroelectric polarization switching (FPS) of potassium nitrate ($KNO_3$) with different polymers such as polyvinylidene fluoride (PVDF) and polyvinyl fluoride (PVF) using simple melt-press techniques. To analyze the ferroelectric polarization switching in potassium nitrate ($KNO_3$) composite films at room temperature, we applied the Ishibashi and Takagi theory (based on Avrami model) to the switching current transient. To investigate the dimensionality of domain growth, the ferroelectric polarization switching current (FPS current) was observed from the square - wave bipolar signals across a resistance of $0.1k{\Omega}$ in series with the composite films. The existence of a switching current transient pulse confirmed the ferroelectricity and indicated the stability of the ferroelectric phase (phase III) of $KNO_3$ at room temperature. Polarization hysteresis (P-E) characteristics supported the prominent features of ferroelectric polarization switching in the composite films at room temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.2
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• pp.129-135
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• 2023

An analytical threshold voltage model is presented to observe the change in threshold voltage shift ΔV_th of a junctionless double gate MOSFET using ferroelectric-metal-SiO₂ as a gate oxide film. The negative capacitance transistors using ferroelectric have the characteristics of increasing on-current and lowering off-current. The change in the threshold voltage of the transistor affects the power dissipation. Therefore, the change in the threshold voltage as a function of theferroelectric thickness is analyzed. The presented threshold voltage model is in a good agreement with the results of TCAD. As a results of our analysis using this analytical threshold voltage model, the change in the threshold voltage with respect to the change in the ferroelectric thickness showed that the threshold voltage increased with the increase of the absolute value of charges in the employed ferroelectric. This suggests that it is possible to obtain an optimum ferroelectric thickness at which the threshold voltage shift becomes 0 V by the voltage across the ferroelectric even when the channel length is reduced. It was also found that the ferroelectric thickness increased as the silicon thickness increased when the channel length was less than 30 nm, but the ferroelectric thickness decreased as the silicon thickness increased when the channel length was 30 nm or more in order to satisfy ΔV_th=0.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1873-1875
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• 2003

Surface corona discharge characteristics of a ac corona charged ferroelectric pellet barrier have been investigated experimentally. Electric charged stored on the surfaces of the ferroelectric pellets by a at corona discharge provide partial electric fields on the surfaces of the ferroelectric pellets, which could generate surface corona discharges on the ferroelectric pellets. This system utilizes both the surface discharges on the ferroelectric pellet barrier and the corona discharge between wire electrodes. As a result, in the case of the corona discharge with the ferroelectric pellet barrier, the mean corona current and ozone generation increase greatly, and the surface discharges on the ferroelectric pellets can be generated efficiently. It is also found that, the ferroelectric pellet barrier discharge reactor had better discharge characteristics for plasma generation than the wire-to-wire discharge reactor without pellets.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.1-14
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• 2001

Current status and prospects of FET-type FeRAMs (ferroelectric random access memories) are reviewed. First, it is described that the most important issue for realizing FET-type FeRAMs is to improve the data retention characteristics of ferroelectric-gate FETs. Then, necessary conditions to prolong the retention time are discussed from viewpoints of materials, device structure, and circuit configuration. Finally, recent experimental results related to the FET-type memories are introduced, which include optimization of a buffer layer that is inserted between the ferroelectric film and a Si substrate, development of a new ferroelectric film with a small remnant polarization value, proposal and fabrication of a 1T2C-type memory cell with good retention characteristics, and so on.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.119-119
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• 2008

The electrical characteristics of Metal-Ferroelectric-Nitride-Oxide-Silicon (MFNOS) structure is studied and compared to the conventional Silicon-Oixde-Nitride-Oxide-Silicon (SONOS) capacitor. The ferroelectric blocking layer is SrBiNbO (SBN with Sr/Bi ratio 1-x/2+x) with the thickness of 200 nm and is fabricated by the RF sputter. The memory windows of MFNOS and SONOS capacitors with sweep voltage from +10 V to -10 V are 6.9 V and 5.9 V, respectively. The effect of ferroelectric blocking layer and charge trapping on the memory window was discussed. The retention of MFNOS capacitor also shows the 10-years and longer retention time than that of the SONOS capacitor. The better retention properties of the MFNOS capacitor may be attributed to the charge holding effect by the polarization of ferroelectric layer.

• Journal of the Korean Ceramic Society
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• v.56 no.4
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• pp.340-349
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• 2019

In ferroelectric materials, piezoresponse force microscopy (PFM) has been widely used to explore ferroelectric domain switching. In this article, we review the fundamentals of nanoscale probing of ferroelectric domain switching using PFM, including the basic principles of PFM and a variety of PFM studies on local domain switching. We also introduce advanced PFM techniques for exploring switching behavior. Finally, we discuss several issues and perspectives in nanoscale probing of ferroelectric domain switching using PFM. PFM has played an important role in exploring switching behavior in ferroelectric materials, and it could be further developed to probe more detailed switching information.

• Advances in nano research
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• v.14 no.4
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• pp.329-334
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• 2023

Organic ferroelectric material found vast application in a verity of engineering and health technology fields. In the present study, we investigated the application of the deformable organic ferroelectric in motion measurement and improving performance in tennis players. Flexible ferroelectric material P(VDF-TrFE) could be used in wearable motion sensors in tennis player transferring velocity and acceleration data to collecting devises for analyzing the best pose and movements in tennis players to achieve best performances in terms of hitting ball and movement across the tennis court. In doing so, ferroelectric-based wearable sensors are used in four different locations on the player body to analyze the movement and also a sensor on the tennis ball to record the velocity and acceleration. In addition, poses of tennis players were analyzed to find out the best pose to achieve best acceleration and movement. The results indicated that organic ferroelectric-based sensors could be used effectively in sensing motion of tennis player which could be utilized in the optimization of posing and ball hitting in the real games.