• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.11
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• pp.1497-1505
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• 2000

A numerical study is made on the ice-formation for a laminar flow in a curved channel. When the water flows through the curved channel with the walls specified below the freezing temperature, the ice layer has been formed on the curved surface, different from that of a straight channel. The fluctuation of ice layer has been predicted, considering the variation of velocity and temperature near the curved portion of channel. The study also takes into account the interaction existing between the laminar flow and the curved channel. In the solution strategy, the present study is substantially different from the existing works in that the complete set of governing equations in both the solid and liquid regions are resolved. The results from this study have been mainly presented, focusing on the variation of ice layer close to the curved portion. Numerical results have been obtained parametrically by varying the curved angle and the radius of curvature of channel, in addition to the variation of Reynolds numbers and wall temperatures of channel. The results show that the curved shape of channel has the great effect on the thickness of the solidification layer. The wave of ice layer thickness appears in the vicinity of curved portion. This behavior of ice layer has been amplified as is the increasing of curved angle and the radius of curvature of channel. In addition, the ice layer becomes thin as Reynolds numbers in increasing. And also, as the wall temperature of channel increases, the width of channel becomes to be shrunk due to the growth of ice layers in the upper and lower wall of channel.

• Journal of Korea Water Resources Association
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• v.37 no.8
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• pp.623-630
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• 2004

In this paper, the hydraulic model tests are conducted for the hydraulic characteristics at channel junctions. The experiments are examined through the variation of approaching angle, discharge in the upstream main channel and the discharge ratio between the main channel and the tributary. The experiments are conducted in the channel model having the length of 450cm, the widths of 40cm and 32cm. Four water tanks and pumps are installed in the experimental channel. The length of stagnation zone is increased by Increasing of approaching angle and the discharge in the upstream channel. The length of stagnation increase with the discharge ratio between the main channel and the tributary. However, the variation of the stagnation zone near the channel junctions is little at the same approaching angles and the discharge ratioes between the main channel and tributary. However, the variation of the stagnation zone near the channel junctions is little at the same approaching angles and the discharge ratioes between the main channel and tributary. Accelerating zone of the velocity is occurred in the middle of the channel in the small approaching angle. However, the influence zone of the accelerating velocity is increased by increasing the approaching angle.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.2
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• pp.260-264
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• 2017

Process variation effect on arch-structured gate stacked array (GSTAR) 3-D NAND flash is investigated. In case of arch-structured GSTAR, a shape of the arch channel is depending on an alignment of photo-lithography. Channel width fluctuates according to the channel hole alignment. When a shape of channel exceeds semicircle, channel width becomes longer, increasing drain current. However, electric field concentration on tunnel oxide decreases because less electric flux converges into a larger surface of tunnel oxide. Therefore, program efficiency is dependent on the process variation. Meanwhile, a radius of channel holes near the bottom side become smaller due to an etch slope. It also affects program efficiency as well as channel width. Larger hole radius has an advantage of higher drain current, but causes degradation of program speed.

• Journal of the Korean Society of Industry Convergence
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• v.3 no.4
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• pp.319-327
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• 2000

In this study, the hydraulic characteristics variation of flood level caused by tree-planting condition in channel section is evaluated through the examination and analysis of back water characteristics in a natural channel within urban area where the improvement is completed. The study channel is Sinchun runs through the center of Taegu metropolitan city. For the analysis, the comparative examination of runoff characteristics depend on tree- planting condition performed for the flood level of the most upstream point, and velocity of study channel when the project flood flows according to three cases that existing channel is improved to the pro-natural channel, the roughness condition of both riverside highlands is changed, and the composition rate of trees in the riverside highlands is changed. It is known that the variation ranges of the flood level increase remarkably in general, and of the velocity decrease from the result of the examination for the hydraulic characteristics parameters at the most upstream point depend on the tree-planting condition of the channel section when the project flood flows. From the results of the above study on the variation of the hydraulic characteristics according to the tree-planting condition in channel section, it is known that the hydraulic characteristics when the project flood flows in channel have close relationship with the section properties and the slope of channel.

• Proceedings of the IEEK Conference
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• 2007.07a
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• pp.125-126
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• 2007

In this paper, we analyze the channel estimation performances associated with the interpolation order for OFDM systems. We first analyze the time varying channel and frequency selective channel, and then we derive the channel Index which indicates the ratio of time axis variation and frequency axis variation. The analyzed results show that time interpolation followed by a frequency interpolation is adequate for the channel with a channel index larger than a certain threshold value and vice versa. Computer simulation explains that the method which decides Interpolation order outperforms fixed order estimation.

• MALSORI
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• no.44
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• pp.73-82
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• 2002

Channel distortion degrades the performance of speech recognizer in telephone environment. It mainly results from the bandwidth limitation and variation of transmission channel. Variation of channel characteristics is usually represented as baseline shift in the cepstrum domain. Thus undesirable effect of the channel variation can be removed by subtracting the mean from the cepstrum. In this paper, to improve the recognition performance of Korea connected digit telephone speech, channel compensation methods such as CMN (Cepstral Mean Normalization), RTCN (Real Time Cepatral Normalization), MCMN (Modified CMN) and MRTCN (Modified RTCN) are applied to the static MFCC. Both MCMN and MRTCN are obtained from the CMN and RTCN, respectively, using variance normalization in the cepstrum domain. Using HTK v3.1 system, recognition experiments are performed for Korean connected digit telephone speech database released by SITEC (Speech Information Technology & Industry Promotion Center). Experiments have shown that MRTCN gives the best result with recognition rate of 90.11% for connected digit. This corresponds to the performance improvement over MFCC alone by 1.72%, i.e, error reduction rate of 14.82%.

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.708-714
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• 1995

We have discussed the buried-channel(BC) behavior through the subthreshold characteristics of submicron PMOSFET device fabricated with twin well CMOS process. In this paper, we have guessed the initial conditions of ion implantation using process simulation, obtained the subthreshold characteristics as a function of process parameter variation such as threshold adjusting ion implant dose($D_c$), channel length(L), gate oxide thickness($T_ox$) and junction depth of source/drain($X_j$) using device simulation. The buried channel behavior with these process prarameter variation were showed apparent difference. Also, the fabricated pMOSFET device having different channel length represented good S.S value and low leakage current with increasing drain voltage.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.1
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• pp.17-23
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• 2005

The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.3
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• pp.187-194
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• 2005

An analysis of the 1/f or flicker noise in FD n-channel Double Gate SOI MOSFET is proposed. In this paper, the variation of power spectral density (PSD) of the equivalent noise voltage and noise current with respect to frequency, channel length and gate-to-source voltage at various temperatures and exponent $C(i.e\;1/f^c$ is reported. The temperature is varied 125 K from to room temperature. The variation of PSD with respect to channel length down to $0.1{\mu}m$ technology is considered. It is analyzed that l/f noise in FD n-channel Double Gate SOI MOSFET is due to both carrierdensity fluctuations and mobility-fluctuations. But controversy still exits to its origin.

• Transactions of the Korean hydrogen and new energy society
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• v.20 no.5
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• pp.390-396
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• 2009

The flooding, especially in channel, is one of the critical issue to put proton exchange membrane fuel cell (PEMFC) to practical use. In this paper, channel flooding was investigated the pressure difference at cathode channel outlet. A ratio of pressure difference changes to 25, 50% as its variation rate. The pressure variable rate is reflected in dimensionless number FN. As a result, modified dimensionless number $FN^*$ correctly predicted the channel flooding. This study analyzes that a variety of pressure difference is how to affect flooding at the cathode of the PEMFC.