• Journal of the Optical Society of Korea
• /
• 제14권3호
• /
• pp.277-281
• /
• 2010

We propose a design and optimization method for a dielectric-loaded surface plasmon polariton waveguide using a genetic algorithm. This structure consists of a polymer ridge on top of two layers of substrate and gold film. The thickness, width and refractive index of the ridge are designed to optimize the figures of merit including mode confinement and propagation length. The modal analysis combined with the effective index method shows that the designed waveguide exhibits a fundamental propagation mode with high mode confinement while ensuring that the propagation loss remains relatively low.

• 한국항행학회논문지
• /
• 제17권4호
• /
• pp.429-434
• /
• 2013

본 논문에서는 모서리 경계조건을 만족하는 접지된 2개의 유전체층 위의 완전도체띠 격자구조에 의한 TM(Transverse Magnetic) 산란 문제를 수치해석 방법인 FGMM (Fourier Galerkin Moment Method)를 이용하여 해석하였다. TM 산란에 대하여 도체띠에 유도되는 표면 전류밀도는 스트립 양 끝에서 매우 큰 값이 예측되므로, 이때 도체띠에 유도되는 표면 전류밀도는 1종 Chebyshev 다항식과 적절한 모서리 경계조건을 만족하는 함수의 곱의 급수로 전개하였다. 전반적으로, 접지평면 위에 유전체층의 비유전율의 값이 증가하면, 반사전력의 급변점에 대한 스트립 폭은 더 큰 값으로 이동하였다. 수치결과들은 기존 논문들과 비교하여 급속한 수렴해와 좋은 일치를 보였다.

• Journal of applied mathematics & informatics
• /
• 제25권1_2호
• /
• pp.315-327
• /
• 2007

Mathematical aspects of the electromagnetic surface-wave propagation are examined for the dielectric core consisting of multiple sub-layers, which are embedded in the gap between the two bounding cladding metals. For this purpose, the linear problem with a partial differential wave equation is formulated into a nonlinear eigenvalue problem. The resulting eigenvalue is found to exist only for a certain combination of the material densities and the number of the multiple sub-layers. The implications of several limiting cases are discussed in terms of electromagnetic characteristics.

• 전자공학회논문지D
• /
• 제35D권11호
• /
• pp.78-84
• /
• 1998

표면방전방식 AC PDP에서 내부 방전으로 생성된 광신호가 상판을 투과할때 발생하는 반사손실을 최적화하기 위하여 기존의 상판구조에서 후막 유전체의 상하면에 굴절율변조 다층박막을 도입하여 굴절율을 정합하는 방법을 사용하였다. 두개의 서로 다른 굴절율을 갖는 납유리를 혼합한후 sputtering 하여 굴절율을 변조시킨 다층 무반사막을 형성한 AC PDP 상판의 광투과율은 평균 85%로 측정되어 기존 방식 AC PDP 상판의 광투과율인 평균 70%에 비하여 약 15%의 광투과율이 개선됨을 보여주었다.

• 한국세라믹학회지
• /
• 제39권3호
• /
• pp.222-225
• /
• 2002

Microwave dielectric properties of the layered and functionally graded materials (FGMs) of $Mg_{0.93}Ca_{0.07}TiO_3$ (MCT) and $(Ca_{0.3}Li_{0.14}Sm_{0.42})TiO_3$(CLST) were investigated as a function of the volume ratio of two components. Dielectric constant was decreased with an increase of the volume ratio of MCT which had a lower dielectric constant thant CLST. For the layered FGMs specimens, the difference of thermal expansion coefficients between two components induced thermal strain to dielectric layers, which was confirmed by the plot of ${\Delta}$k (X-ray diffraction peak width0 versus k (scattering vector) using the double-peak Lorentzian function, f(x). Quality factor of the specimens was affected by the thermal strain of dielectric layer, especially MCT layer. For the specimen with the volume ratio of MCT/CLST = 2, the qulaity factor of the specimen showed a minimum value due to the maximum thermal strain fo MCT layer.

• KIEE International Transactions on Electrophysics and Applications
• /
• 제12C권4호
• /
• pp.208-213
• /
• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• 한국군사과학기술학회지
• /
• 제12권5호
• /
• pp.644-651
• /
• 2009

In this paper, the design results of a $22.5^{\circ}$ diode phase shifter for the RADANT lens and two $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layers for the diode phase shifter are presented. The amount of phase shift introduced by each dielectric layer depends on the thickness and the shape of the metal strip and the electrical property of the diode. The equivalent circuit model is employed to represent the dielectric phase shift layer, and the simulated result of the equival circuit model is compared with the result of the field simulation. The measured data of the fabricated $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layer shows about $2^{\circ}$ phase shift error.

• 한국항행학회논문지
• /
• 제17권2호
• /
• pp.183-188
• /
• 2013

본 논문에서는 모서리 경계조건을 만족하는 접지된 2개의 유전체층 위의 완전도체띠 격자구조에 의한 TE (Transverse Electric)산란 문제를 수치해석 방법인 FGMM (Fourier Galerkin Moment Method)를 이용하여 해석하였다. TE 산란에 대하여 유도되는 표면 전류밀도는 스트립 양 끝에서 0의 값이 기대되며, 이때 도체띠에 유도되는 표면 전류밀도는 2종 Chebyshev 다항식과 적절한 모서리 경계조건을 만족하는 함수의 곱의 급수로 전개하였다. 수치결과들은 기존 논문들과 비교하여 급속한 수렴해와 좋은 일치를 보였다.

• 한국표면공학회지
• /
• 제33권4호
• /
• pp.217-221
• /
• 2000

The gate oxide thickness is becoming thinner and thinner in order to speed up the semiconductor CMOS devices. We have investigated very thin$ SiO_2$ gate oxide layers and found anomaly between the thickness determined with capacitance measurement and these obtained with cross-sectional high resolution transmission electron microscopy. The thicknesses difference of the two becomes important for the thickness of the oxide below 5nm. We propose that the variation of dielectric constant in thin oxide films cause the anomaly. We modeled the behavior as (equation omitted) and determined $\varepsilon_{bulk}$=3.9 and $\varepsilon_{int}$=-4.0. We predict that optimum $SiO_2$ gate oxide thickness may be $20\AA$ due to negative contribution of the interface dielectric constant. These new results have very important implication for designing the CMOS devices.s.

• 한국항행학회논문지
• /
• 제16권4호
• /
• pp.635-640
• /
• 2012

본 논문에서는 접지된 2개의 유전체층 위의 도체띠 격자구조에 의한 TE (Transverse Electric) 산란문제를 도체경계조건과 수치해석 방법인 FGMM (Fourier-Galerkin Moment Method)를 적용하여 해석하였으며, 이 때 유도되는 표면전류밀도는 미지의 계수와 단순한 함수인 지수함수의 곱의 급수로 전개하였다. 전반적으로, 제안된 구조에서 영역-2의 유전체층의 비유전율 ${\epsilon}_{r2}$과 유전체 층의 두께 $t_2$가 증가함에 따라 반사전력이 증가하였다. 반사전력의 급변점들은 공진효과에 기인한 것으로 과거에 wood's anomaly라고 불리워졌으며, 수치계산 결과들은 기존 논문의 결과들과 일치하였다.