• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2014년도 춘계학술대회 논문집
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• pp.487-490
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• 2014

These Days a lot of Noise Complaints in vicinity of Railway has been more increase than before. Almost 1/3 Residences who lives in Railway side are Exposure to Noise Pollution. Since the Apartment Buildings around Railway are getting more higher, so those of the Noise Barrier are not best solution anymore. We are going to make a New Plane with the state of the art technology for Railway Noise Abatement Control. Our Goal are focus on a development of Light Weight Noise Tunnel designed by new absorption mat'l and tunnel Stucture on the Overbridge and Viaduct of existing Railway. New Noise Tunnel will be reducing their weight more than 30% against Road Traffic One and also 10dB(A) Noise Reduction against Noise Barrier.

• Wind and Structures
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• 제20권5호
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• pp.643-660
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• 2015

The wind tunnel test of large-scale sectional model and computational fluid dynamics (CFD) are employed for the purpose of studying the aerodynamic appendices and mechanism on suppression for the vortex-induced vibration (VIV). This paper takes the HongKong-Zhuhai-Macao Bridge as an example to conduct the wind tunnel test of large-scale sectional model. The results of wind tunnel test show that it is the crash barrier that induces the vertical VIV. CFD numerical simulation results show that the distance between the curb and crash barrier is not long enough to accelerate the flow velocity between them, resulting in an approximate stagnation region forming behind those two, where the continuous vortex-shedding occurs, giving rise to the vertical VIV in the end. According to the above, 3 types of wind fairing (trapezoidal, airfoil and smaller airfoil) are proposed to accelerate the flow velocity between the crash barrier and curb in order to avoid the continuous vortex-shedding. Both of the CFD numerical simulation and the velocity field measurement show that the flow velocity of all the measuring points in case of the section with airfoil wind fairing, can be increased greatly compared to the results of original section, and the energy is reduced considerably at the natural frequency, indicating that the wind fairing do accelerate the flow velocity behind the crash barrier. Wind tunnel tests in case of the sections with three different countermeasures mentioned above are conducted and the results compared with the original section show that all the three different countermeasures can be used to control VIV to varying degrees.

• Wind and Structures
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• 제31권3호
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• pp.185-196
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• 2020

A method to reduce the wind pressure at the leading edge of a noise barrier was investigated by gradually lowering the height of a member added to the end of the noise barrier. The shape of the lowered height of the added member was defined by its length and slope, and the optimal variable was determined in wind tunnel testing via the boundary-layer wind profile. The goal of the optimal shape was to reduce the wind pressure at the leading edge of the noise barrier to the level suggested in the Eurocode and to maintain the base-bending moment of the added member at the same level as the noise-barrier section. Using parametric wind tunnel investigation, an added member with a slope of 1:2 that protruded 1.2 times the height of the noise barrier was proposed. This added member is expected to simplify, or at least minimize, the types of column members required to equidistantly support both added members and noise barriers, which should thereby improve the safety and construction convenience of noise-barrier structures.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.415-416
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• 2009

The tunnel barrier engineered charge trap flash (TBE-CTF) non-volatile memory using CRESTED tunneling barrier was fabricated by stacking thin $Si_3N_4$ and $SiO_2$ dielectric layers. Moreover, high-k based $HfO_2$ charge trap layer and $Al_2O_3$ blocking layer were used for further improvement of the NVM (non-volatile memory) performances. The programming/erasing speed, endurance and data retention of TBE-CTF memory was evaluated.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.255-255
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• 2010

Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single $SiO_2$ tunnel barrier have been reported. [1-2] In this study, the SiC charge trap NVM was fabricated and electrical properties were characterized. The 100-nm thick Poly-Si layer was deposited to confined source/drain region by using low-pressure chemical vapor deposition (LP-CVD). After etching and lithography process for fabricate the gate region, the $Si_3N_4/SiO_2/Si_3N_4$ (NON) and $SiO_2/Si_3N_4/SiO_2$ (ONO) barrier engineered tunnel layer were deposited by using LP-CVD. The equivalent oxide thickness of NON and ONO tunnel layer are 5.2 nm and 5.6 nm, respectively. By using ultra-high vacuum magnetron sputtering with base pressure 3x10-10 Torr, the 2-nm SiC and 20-nm $SiO_2$ were successively deposited on ONO and NON tunnel layers. Finally, after deposited 200-nm thick Al layer, the source, drain and gate areas were defined by using reactive-ion etching and photolithography. The lengths of squire gate are $2\;{\mu}m$, $5\;{\mu}m$ and $10\;{\mu}m$. The electrical properties of devices were measured by using a HP 4156A precision semiconductor parameter analyzer, E4980A LCR capacitor meter and an Agilent 81104A pulse pattern generator system. The electrical characteristics such as the memory effect, program/erase speeds, operation voltages, and retention time of SiC charge trap memory device with barrier engineered tunnel layer will be discussed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.189-190
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• 2008

The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated. The band structure of stacked tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with that of the conventional tunneling barrier. The band-gap engineered tunneling barriers show the lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

• 한국자기학회지
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• 제15권6호
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• pp.311-314
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• 2005

본 연구에서는 Al-Oxide(AIOx) 에 Ti를 첨가하여. Ti 함량에 따라 자기터널접합의 자기터널링 현상 변화 및 TiA l합금박막의 미세구조, 표면거칠기 변화를 관찰하였다. Ti를 첨가한 TiAlOx 절연층을 사용하여 기존 AlOx를 사용한 경우 보다 높은 터널링 자기저항(Tunneling Magnetoresistance, TMR) 비를 가지는 자기터널접합을 제작하였다. TMR 비의 증가 요인은 Ti를 첨가함에 따라, TiAl 합금박막의 입계가 작아지고, 치밀한 구조를 가져, 우수한 계면평활도를 가지는 균일한 TiAlOx 절연층이 형성되어, 소자의 구조적 안정성이 향상되었기 때문으로 분석하였다. 또한 향상된 구조적 안정성으로 인해 소자의 열적, 전기적 안정성도 크게 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.24-25
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• 2008

The effect of heat treatment in $HfO_2$ as charge trap with $SiO_2/Si_3N_4/SiO_2$ as tunnel oxide layer in capacitors has been investigated. Rapid thermal annealing (RTA) were carried out at the temperature range of 600 - $900^{\circ}C$. It is found that all devices carried out heat treatment have large threshold voltage shift Especially, device performed heat treatment at $900^{\circ}C$ has been confirmed the largest memory window. Also, Threshold voltage shift of device used conventional $SiO_2$ as tunnel oxide layer was smaller than that with $SiO_2/Si_3N_4/SiO_2$.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2007년도 The 1st International Symposium on Advanced Magnetic Materials
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• pp.215.1-215.1
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• 2007

• 한국도로학회논문집
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• 제10권4호
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• pp.235-245
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• 2008

본 연구에서는 도로의 증가와 더불어 급속히 증가하고 있는 터널에서 차량이 터널에 진입할 때의 속도편차를 분석하여 터널입구부의 안전성을 증진할 수 있는 방안에 대하여 연구하였다. 터널의 존재는 운전자에게 그 자체만으로서 단순한 오르막 경사보다 더 큰 속도 감소를 유발하며, 터널 입구부에서 발생하는 차량 충돌사고는 다른 도로구간에서 발생하는 사고와 비교해 볼 때 피해가 더 크다. 따라서 사고로 인한 피해를 경감시키기 위해 터널 입구부에 PE방호벽이나 가드레일 등의 안전시설을 설치하고 있지만, 운전자에게 이것은 또 다른 장애물로 인식될 수 있다. 터널 입구부에 설치되어 있는 안전시설물의 형태는 크게 PE방호벽, 가드레일, PE 드럼 등이 있으나, 본 연구에서는 고속도로터널 입구에 일반적으로 가장 많이 설치되어 있는PE방호벽과 운전자에게 장애물로 인식될 수 있는 이러한 안전시설물이 설치되어 있지 않은 경우로 크게 구분하였다. 또한 터널 내부로 진입 할 때 갓길을 포함 우측방여유폭의 차이가 큰 경우와 작은 경우로 구분하였다. 4가지 형태의 터널 입구부에서의 차량속도와 일반도로구간에서의 YDS(차량검지체계)로 수집된 속도의 차이를 분석에 사용하였다. 통계적 검증을 통하여 안전시설물 설치 형태와 우측방여유폭의 차이에 따른 각 Case별 유의성을 검토하여 터널 입구부 안전성 증진을 위한 대안을 제시하고자 한다.