Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2010.08a
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- Pages.255-255
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- 2010
Electrical characteristics of SiC thin film charge trap memory with barrier engineered tunnel layer
- Han, Dong-Seok (Department of Physics, Hanyang University) ;
- Lee, Dong-Uk (Department of Physics, Hanyang University) ;
- Lee, Hyo-Jun (Department of Physics, Hanyang University) ;
- Kim, Eun-Kyu (Department of Physics, Hanyang University) ;
- You, Hee-Wook (Department of Electronic Materials Engineering, Kwangwoon University) ;
- Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
- Published : 2010.08.18
Abstract
Recently, nonvolatile memories (NVM) of various types have been researched to improve the electrical performance such as program/erase voltages, speed and retention times. Also, the charge trap memory is a strong candidate to realize the ultra dense 20-nm scale NVM. Furthermore, the high charge efficiency and the thermal stability of SiC nanocrystals NVM with single
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