• Journal of the Institute of Electronics Engineers of Korea SD
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• v.38 no.2
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• pp.114-121
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• 2001

A circuit model for active-controlled field emitter array(ACFEA) as an electron source of active-controlled field emission display(ACFED) has been proposed. The ACFEA with hydrogenated amorphous silicon thin-film transistor(a-Si:H TFT) and Spindt-type molibdenum tips (Spindt-Mo FEA) has been fabricated monolithically on the same glass. A-Si:H TFT is used as a control device of field emitters, resulting in stabilizing emission current and lowering driving voltage. The basic model parameters extracted from the electrical characteristics of the fabricated a-Si:H TFT and Spindt-Mo FEA were implemented into the ACFEA model with a circuit simulator SPICE. The accuracy of the equivalent circuit model was verified by comparing the simulated results with the measured one through DC analysis of the ACFEA. The transient analysis of the ACFEA showed that the gate capacitance of FEA along with the drivability of TFT strongly affected the response time. With the fabricated ACFEA, we obtained a response time of 15$mutextrm{s}$, which was enough to make 4bit/color gray scale with the pulse width modulation (PWM).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.11 no.1
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• pp.20-26
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• 2001

Titanium boride ($\textrn{TiB}_{x}$) films were deposited on (100) silicon substrates at the substrate temperature of $500^{\circ}C$ by means of the co-evaporation of titanium and boron evaporants during deposition. The co-evaporation method makes it possible to deposit the non-stoichiometric films with different boron-to-titanium ratio($0{\le}B/Ti \le 2.5$). The resistivity increases linearly as the boron-to-titanium ratio in the as-deposited films is increased. The surface roughness of $\textrn{TiB}_{x}$ films is changed as a function of the boron-to-titanium ratio. The XRD spectrum for pure titanium film shows a highly (002) preferred orientation. For B/Ti=0.59 ratio only a single TiB phase that shows a (111) preferred orientation is observed. However, the $\textrn{TiB}_{x}$ phase with the hexagonal structure of the $AlB_2$(C32) type appears as the boron concentration increase, and only a single $\textrn{TiB}_{x}$ phase is observed for $B/Ti \ge 2.0$ ratio. The $\textrn{TiB}_{x}$/Si samples reveal a tensile stress (3~$20{\times}^9$dyn/$\textrm{cm}^2$) in the overall composition of the films, although the magnitude of the residual stresses is depended on the nominal B/Ti ratio.

• Journal of the Microelectronics and Packaging Society
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• v.25 no.3
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• pp.61-66
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• 2018

This research scrutinizes the self-annealing characteristics of copper used to metal interconnection for application of DRAM fabrication process. As the time goes after the copper deposited, the grain of copper is growing. It is called self-annealing. We use the electroplating method for copper deposition and estimate two kinds of electroplating chemicals having different organic additives. As the time of self-annealing is elapsed, sheet resistance decreases with logarithmic dependence of time and is finally saturated. The improvement of sheet resistance is approximately 20%. The saturation time of experimental sample is shorter than that of reference sample. We can find that self-annealing is highly efficient in grain growth of copper through the measurement of TEM analysis. The structure of copper grain is similar to the bamboo type useful for current flow. The results of thermal excursion characteristics show that the reliability of self-annealed sample is better than that of sample annealed at higher temperature. The self-annealed sample is not contained in hillock. The self-annealed samples grow until $2{\mu}m$ and develop in [100] direction more favorable for reliability.

• Journal of the Korean Vacuum Society
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• v.7 no.4
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• pp.368-373
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• 1998

As device dimensions approach submicrometer size in ULSI, the demand for interlayer dielectric materials with very low dielectric constant is increased to solve problems of RC delay caused by increase in parasitic resistance and capacitance in multilevel interconnectins. Fluorinated amorphous carbon in one of the promising materials in ULSI for the interlayer dielectric films with low dielectric constant. However, poor thermal stability and adhesion with Si substrates have inhibited its use. Recently, amorphous hydrogenated carbon (a-C:H) film as a buffer layer between the Si substrate and a-C:F has been introduced because it improves the adhesion with Si substrate. In this study, therfore, a-C:F/a-C:H films were deposited on p-type Si(100) by ECRCVD from $C_2F_6, CH_4$and $H_2$gas source and investigated the effect of forward power and composition on the thickness, chemical bonding state, dielectric constant, surface morphology and roughness of a-C:F films as an interlayer dielectric for ULSI. SEM, FT-IR, XPS, C-V meter and AFM were used for determination of each properties. The dielectric constant in the a-C:F/a-C:H films were found to decrease with increasing fluorine content. However, the dielectric constant increased after furnace annealing in $N_2$atomosphere at $400^{\circ}C$ for 1hour due to decreasing of flurorine content. However, the dielectric constant increased after furnace annealing in $N_2$atmosphere at $400^{\circ}C$ for 1hour due to decreasing of fluorine concentration.

• Korean Journal of Microbiology
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• v.37 no.2
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• pp.130-136
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• 2001

The killing effects of two types(one-phase reactor and two-phase reactor) of UV-TiO$_2$photocatalytic system on the microorganisms have been studied. The UV-lamp which emits maximum 39 watts at 254 nm was prepared in these system. Three types of $TiO_2$ coating method were adopted. One type is thin film coated form on the quartz tube in the reactor and another one is surface rough coated form on the glass bead. The other one is $TiO_2$-mixed alginate bead form. UV irradiation was carried out for 1 min. In case of one phase reactor, the bactericidal efficiencies of E. coli by $TiO_2$-coated quartz tube and $TiO_2$-coated glass bead were 63.2% and 89.9%, respectively. In the air-bubbling system, the bactericidal efficiency was 95%, however, the efficiency decreased to 90.6% in the non-bubbling system. In the $TiO_2$-mixed alginate bead system, bactericidal efficiency was 86%. When $H_2O$$_2$ was treated (10, 15, 20, and 25 mg/ι) to the $TiO_2$-coated glass bead reactor, bactericidal efficiency significantly increased according to the concentration of $H_2$$O_2$. Two phase reactor showed more elevated efficiency. E. coli was more sensitive to the reaction than S. cerevisiae.

• Korean Journal of Food Science and Technology
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• v.35 no.1
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• pp.72-76
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• 2003

Ultrafiltration (UF) tests performed on traditional soy sauce (kanjang) using UF flat membrane test cell unit with thin film laminar flow similar to the spiral type membrane module in batch operations revealed reduction in permeate flux is proportional to the logarithm values of volume reduction ratio of the retentate kanjang at different feed rate of kanjang. Feed rate of 1.5 L/min was found to be adequate for long-term UF operation of kanjang using the test unit attached with MW cut-off size of 200,000 dalton polyoleffin plastic membrane in batch operation with the least concentration polarization. The higher the feed rate of kanjang, the lower the permeability of total nitrogen and NaCl, resulting in lower optical density at 500 nm and lower permeability of minerals such as Cu, Mn, and Mg. Microbial cells were completely rejected regardless of the feed rate, whereas most free amino acids were not.

• Tuberculosis and Respiratory Diseases
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• v.46 no.1
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• pp.110-115
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• 1999

Pulmonary histiocytosis X is a granulomatous disorder of the lung of unknown cause. Patients with this disease often complain of cough, dyspnea on exertion and, occasionally, chest pain from pneumothorax or bone involvement. However, DI is uncommon in these patients. We report a case of primary pulmonary histiocytosis X with central diabetes insipidus. A 23-year-old man presented with dyspnea suffered from dry cough, exertional dyspnea, polydipsia and polyuria for 4 months. He was a heavy smoker. He was found to have reticulonodular interstitial opacities on chest X-ray film. High-resolution computed tomography revealed thin-walled cysts of various sizes in both lungs. Open lung biopsy was done. On light microscopic examination revealed proliferation and infiltration of Langerhans cells. Immunohistochemically, Langerhans cells showed strong cytoplasmic staining with S-100 protein and electronmicroscopic examination showed Birbeck granules in Langerhans cells. Water deprivation test showed central-type diabetes insipidus and brain MRI showed no abnormal lesion on suprasellar region. Smoking cessation was recommended. He was treated with oral desmopressin.

• Membrane Journal
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• v.20 no.4
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• pp.312-319
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• 2010

Carbon membrane materials have received considerable attention for the gas separation including hydrocarbon mixture of ingredients of the volatile organic compounds(VOCs) because they possess their higher selectivity, permeability, and thermal stability than the polymeric membranes. The use of activated carbon membranes makes it possible to separate continuously the VOCs mixture by the selective adsorption-diffusion mechanism which the condensable components are preferentially adsorbed in to the micropores of the membrane. The activated carbon hollow fiber membranes with uniform adsorptive micropores on the wall of open pores and the surface of the membranes have been fabricated by the carbonization of a thin film of phenolic resin deposited on porous alumina hollow fiber membrane. Oxidation, carbonization, and activation processing variables were controlled under different conditions in order to improve the separation characteristics of the activated carbon membrane. Properties of activated carbon hollow fiber membranes and the characterization of a gas permeation by pyrolysis conditions were studied. As the result, the activated carbon hollow fiber membranes with good separation capabilities by the molecular size mechanism as well as selective adsorption on the pores surface followed by surface diffusion effective in the recovery hydrocarbons have been obtained. Therefore, these activated carbon membranes prepared in this study are shown as promising candidate membrane for separation of VOCs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.10
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• pp.805-810
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• 2012

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.456-456
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• 2010

CMOS 소자가 서브마이크론($0.1\;{\mu}m$) 이하로 스케일다운 되면서 단채널 효과(short channel effect), 게이트 산화막(gate oxide)의 누설전류(leakage current)의 증가와 높은 직렬저항(series resistance) 등의 문제가 발생한다. CMOS 소자의 구동전류(drive current)를 높이고, 단채널 효과를 줄이기 위한 가장 효율적인 방법은 소스 및 드레인의 얕은 접합(shallow junction) 형성과 직렬 저항을 줄이는 것이다. 플라즈마 도핑 방법은 플라즈마 밀도 컨트롤, 주입 바이어스 전압 조절 등을 통해 저 에너지 이온주입법보다 기판 손상 및 표면 결함의 생성을 억제하면서 고농도로 얕은 접합을 형성할 수 있다. 그리고 얕은 접합을 형성하기 위해 주입된 불순물의 활성화와 확산을 위해 후속 열처리 공정은 높은 온도에서 짧은 시간 열처리하여 불순물 물질의 활성화를 높여주면서 열처리로 인한 접합 깊이를 얕게 해야 한다. 그러나 접합의 깊이가 줄어듦에 따라서 소스 및 드레인의 표면 저항(sheet resistance)과 접촉저항(contact resistance)이 급격하게 증가하는 문제점이 있다. 이러한 표면저항과 접촉저항을 줄이기 위한 방안으로 실리사이드 박막(silicide thin film)을 형성하는 방법이 사용되고 있다. 본 논문에서는 (100) p-type 웨이퍼 He(90 %) 가스로 희석된 $PH_3$(10 %) 가스를 사용하여 플라즈마 도핑을 실시하였다. 10 mTorr의 압력에서 200 W RF 파워를 인가하여 플라즈마를 생성하였고 도핑은 바이어스 전압 -1 kV에서 60 초 동안 실시하였다. 얕은 접합을 형성하기 위한 불순물의 활성화는 ArF(193 nm) excimer laser를 통해 $460\;mJ/cm^2$의 에니지로 열처리를 실시하였다. 그리고 낮은 접촉비저항과 표면저항을 얻기 위해 metal sputter를 통해 TiN/Ti를 $800/400\;{\AA}$ 증착하고 metal RTP를 사용하여 실리사이드 형성 온도를 $650{\sim}800^{\circ}C$까지 60 초 동안 열처리를 실시하여 $TiSi_2$ 박막을 형성하였다. 그리고 $TiSi_2$의 두께를 측정하기 위해 TEM(Transmission Electron Microscopy)을 측정하였다. 화학적 결합상태를 분석하기 위해 XPS(X-ray photoelectronic)와 XRD(X-ray diffraction)를 측정하였다. 접촉비저항, 접촉저항과 표면저항을 분석하기 위해 TLM(Transfer Length Method) 패턴을 제작하여 I-V 특성을 측정하였다. TEM 측정결과 $TiSi_2$의 두께는 약 $580{\AA}$ 정도이고 morphology는 안정적이고 실리사이드 집괴 현상은 발견되지 않았다. XPS와 XRD 분석결과 실리사이드 형성 온도가 $700^{\circ}C$에서 C54 형태의 $TiSi_2$ 박막이 형성되었고 가장 낮은 접촉비저항과 접촉저항 값을 가진다.