• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.225-231
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• 2010

In this paper, we investigate the channel thermal noise in nanoscale MOSFETs. Simple analytical model of thermal noise factor in nanoscale MOSFETs is presented and it is verified with accurately measured noise data. The noise factor is expressed in terms of the channel conductance and the electric field in the gradual channel region. The proposed noise model can predict the channel thermal noise behavior in all operating bias regions from the long-channel to nanoscale MOSFETs. From the measurement results, we observed that the thermal noise model for the long-channel MOSFETs does not always underestimate the short-channel thermal noise.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.1
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• pp.106-111
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• 2016

Thermal noise generated in the electrolyte is modeled for the electrolyte-oxide-semiconductor field-effect transistors. Two noise sources contribute to output noise currents. One is the thermal noise generated in the bulk electrolyte region, and the other is the thermal noise from the double-layer region at the electrolyte-oxide interface. By employing two slightly-different equivalent circuits for two noise current sources, the power spectral density of output noise current is calculated. From the modeling and simulated results, the bulk electrolyte thermal noise dominates the double-layer thermal noise. Electrolyte thermal noise are computed for three different concentrations of NaCl electrolyte. The derived formulas give a good agreement with the published experimental data.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.3
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• pp.213-223
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• 2013

A unified channel thermal noise model valid in all operation regions is presented for short channel MOS transistors. It is based on smooth interpolation between weak and strong inversion models and consistent physical model including velocity saturation, channel length modulation, and carrier heating. From testing for noise benchmark and comparing with published noise data, it is shown that the proposed noise model could be useful in simulating the MOSFET channel thermal noise in all operation regions.

• Journal of the Institute of Convergence Signal Processing
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• v.13 no.1
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• pp.44-49
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• 2012

The indirect-contact ECG measurement is a newly developed method for unconstrained and nonconscious measurement in daily Life. This study is the first step to reducing the large background noise appearing in indirect-contact ECG. This study built the thermal noise model of capacitively coupled active electrode which is used in indirect-contact ECG. The results show that the level of thermal noise estimated by the thermal noise model is much the same as that of actual background noise for the capacitively coupled active electrode alone. By applying the actual electrical properties of a sample cotton cloth to the thermal noise model, the theoretical level of thermal noise in the indirect-contact ECG was estimated. The results also show that the level of op-amp's intrinsic noise is so small that it can be negligible in comparison with thermal noise of resistors. The relationship between the level of thermal noise and the resistance of the bias resistor was derived, and it is the base for the further study how to choice the optimal resistance for the bias resistor.

• KIEAE Journal
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• v.17 no.1
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• pp.83-89
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• 2017

Purpose: Thermal sensation or thermal comfort was randomly used in many studies which focused on combined effects of thermal and acoustic environments on human perception. However, thermal sensation and thermal comfort are not synonyms. Thermal comfort is more complex human perception on thermal environment than thermal sensation. This study aims to investigate effects of noise on thermal sensation and thermal comfort separately, and also to investigate effects of temperature on acoustic sensation and comfort. Method: Combined thermal and acoustic configurations were simulated in an indoor environmental chamber. Twenty four participants were exposed to two types of noise (fan and babble) with two noise levels (45 dBA and 60 dBA) for an hour in each thermal condition of PMV-1.53, 0.03, 1.53, 1.83, respectively. Temperature sensation, temperature preference, thermal comfort, noisiness, loudness, annoyance, acoustic comfort, indoor environmental comfort were evaluated in each combined environmental condition. Result: Noise did not affected thermal sensation, but thermal comfort significantly. Temperature had an effect on acoustic comfort significantly, but no effect on noisiness and loudness in overall data analysis. More explicit interactions between thermal condition and noise perception showed only with the noise level of 60 dBA. Impacts of both thermal comfort and acoustic comfort on the indoor environmental comfort were analyzed. In adverse thermal environments, thermal comfort had more impact than acoustic comfort on indoor environmental comfort, and in neutral thermal environments, acoustic comfort had more important than thermal comfort.

• Progress in Superconductivity and Cryogenics
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• v.15 no.2
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• pp.20-23
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• 2013

For sensitive measurements of micro-Tesla nuclear magnetic resonance (${\mu}T$-NMR) signal, a low-noise superconducting quantum interference device (SQUID) system is needed. We have fabricated a liquid He dewar for an SQUID having a large diameter for the pickup coil. The initial test of the SQUID system showed much higher low-frequency magnetic noise caused by the thermal magnetic noise of the aluminum plates used for the vapor-cooled thermal shield material. The frequency dependence of the noise spectrum showed that the noise increases with the decrease of frequency. This behavior could be explained from a two-layer model; one generating the thermal noise and the other one shielding the thermal noise by eddy-current shielding. And the eddy-current shielding effect is strongly dependent on the frequency through the skin-depth. To minimize the loop size for the fluctuating thermal noise current, we changed the thermal shield material into insulated thin Cu mesh. The magnetic noise of the SQUID system became flat down to 0.1 Hz with a white noise of 0.3 $fT/{\surd}Hz$, including the other noise contributions such as SQUID electronics and magnetically shielded room, etc, which is acceptable for low-noise ${\mu}T$-NMR experiments.

• The Journal of the Acoustical Society of Korea
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• v.12 no.1
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• pp.47-54
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• 1993

Performance analysis is very important to transmit the high quality information and to construct the optimal system for the minimze the noise from the channel of spread spectrum system. In this paper the error rate performance is analyzed with computer simulation in noncoherent frequency hopping M-qry frequency shift keying(FH/MFSk) systems with regard to thermal noise under the partial band jamming environments. AS a result, in case the thermal noise is disregarded, bit error probability of system in jamming fraction ρ and Eb/Nj(bit energy to jamming power density) is reduced with the increase of K and in worst case 32FSK system is better than 2FSK system by 3.23dB with the variatio of Eb/Nj. In case thermal noise is considered, bit error probability of system by 3.23dB with the variation of Eb/Nj. In case thermal noise is considered, bit error probability of system are reduced with the increase of K and Eb/No(bit energy to thermal noise density). Bit error probability in connection with worst case ρ is not largely influenced form over the 14dB to K=1 and 8dB to K=5 accordingly thermal noise disregarding. These results may be useful for avoiding the common vulnerabilities when the spread spectrum system is designed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.10
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• pp.107-114
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• 1996

Monte carlo method is especially a useful method for the analysis of thermal noise of semiconductor devices since the time dependence of microscopic details is simulated directly. Recently, a mthod for the calculation of the instantaneous currents of 2-dimensional devices, which is numerically more accurate than the conventional method, has been proposed using the generalized ramo-shockley theorem. Using this mehtod we investage the validity of the existing thermal noise theories of field-effect transistors. First, the 1-dimensional analysis of thermal noise theories of field-effect transistors. First, the 1-dimensional analysis of thermal noise theories of field-effect transistors. First, the 1-dimensional analysis of thermal noise using ramo-shockley theorem is shown to be applicable to 2 dimensional devices if the frequency of interest is low enough. The correlation between electrons in different regions of th echannel is shown not to be negligible. And we also obtian the spatial map of the noise in the channel region. By doing so, we show that the steady state nyquist theorem is the correct theory rather than the theory by van der ziel et.al.

• Journal of Applied Reliability
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• v.5 no.4
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• pp.439-450
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• 2005

Thermal deformation of Digital Television effect friction noise directly. However there was no methods to find and to solve the thermal friction noise which is huge problem in Digital Television In this study, to figure out occurrence cause of friction noise of the product, we measured thermal deformation of the product to organize a triggering device united with Laser Doppler Vibrometer(LDV) which turned occurrence moment of thermal friction noise into a possibility to measure. In conclusion, we could offer an effective information of design, and ensured ESPI(Electronic Speckle Pattern Interferometry) measure technique which is more detailed than the past way.

• JSTS:Journal of Semiconductor Technology and Science
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• v.6 no.3
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• pp.206-209
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• 2006

This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.