JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Analytical Thermal Noise Model of Deep-submicron MOSFETs

  • Shin, Hyung-Cheol (School of Electrical Engineering, Seoul National University) ;
  • Kim, Se-Young (School of Electrical Engineering, Seoul National University) ;
  • Jeon, Jong-Wook (School of Electrical Engineering, Seoul National University)
  • 발행 : 2006.09.30
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초록

This paper presents an analytical noise model for the drain thermal noise, the induced gate noise, and their correlation coefficient in deep-submicron MOSFETs, which is valid in both linear region and saturation region. The impedance field method was used to calculate the external drain thermal noise current. The effect of channel length modulation was included in the analytical equation. The noise behavior of MOSFETs with decreasing channel length was successfully predicted from our model.

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참고문헌

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