• Journal of the Korean Ceramic Society
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• v.34 no.6
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• pp.636-644
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• 1997

The effect of various processing parameters, in particular the substrate and filament temperature, on the nucleation of diamond has been studied for the hot filament CVD process with a negative bias on the substrate. As far as the substrate temperature was maintained around the critical temperature of 73$0^{\circ}C$, the nucleation of diamond increased with increasing filament temperature. The maximum nucleation density of ~ 2$\times$109/$\textrm{cm}^2$ was obtained under the condition of filament temperature of 230$0^{\circ}C$, substrate temperature of 75$0^{\circ}C$, bias voltage of 300V, methane concentration of 20%, and deposition time of 2 hours. This nucleation density is about the same as those obtained in previous investigations. For fixed substrate temperatures, the nucleation density varies up to about 103 times depending on experimental conditions. This result is different from that of Reinke, et al. When the substrate temperature was above 80$0^{\circ}C$, a silkworm~shaped carbon phase was co-deposited with hemispherical microcrystalline diamond, and its amount increased with increasing substrate temperature. The Raman spectrum of the silkworm-shaped carbon was the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the deposition condition of diamond, implying that it did not affect the nucleation of diamond.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1101-1104
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• 2003

In this paper, we analyzed the gate current and substrate current by the hot carrier effects and restoration phenomenon of characteristics by time in the p-channel MOSFETs. The Stress voltage condition is a voltage in maximum gate current and time is 3s, 10s, 30s, l00s, 1000s, 2000s and 3000s. As results of analysis, the gate current and substrate current were decreased by stress time, and the restoration time of characteristics were shown the results that were decreased by the exponential times.

• Journal of the Korean institute of surface engineering
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• v.29 no.2
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• pp.93-99
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• 1996

In this work BN thin films were deposited on Si substrate by R. F. sputtering method at $200^{\circ}C$ and in Ar + $N_2$ mixed gas atmosphere. In order to investigate the effect of ion bombardment on substrate for c-BN bonding, substrate bias voltage was applied. The optimum substrate bias voltage for c-BN bonding was determined by FTIR analysis on specimens which were deposited with various bias voltages. Then BN thin film was deposited with this optimum condition and its phase, morphology, chemical composition, and refractive index were compared with those of BN film which was deposited without bias voltage. FTIR results showed that BN films deposited with substrate bias voltage were composed of mixed phases of c-BN and h-BN, while those deposited without bias voltage were h-BN only. When pure Ar gas was used for sputtering gas, BN films were delaminated easily from substrate in air, while when 10% $N_2$ gas was added to the sputtering gas, although c-BN specific infrared peak was reduced, delamination did not occur. GXRD and TEM results showed that BN films were amorphous phases regardless of substrate bias voltage, and AES results showed that the chemical compositions of B/N were about 1.7~1.8. The refractive index of BN film deposited with bias voltage was higher than that without bias voltage. The reason is believed to be the existence of c-BN bonding in BN film and the higher density of film that deposited with the substrate bias voltage.

• Journal of the Semiconductor & Display Technology
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• v.7 no.4
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• pp.1-5
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• 2008

There is a need to enlarge the mother glass substrate in OLED to raise its productivity and to realize OLED TV. On the other hand, some difficulties may arise regarding the deflection of a large glass substrate during its handling operation due to its thinness $(0.5\sim0.7t)$, which is not even enough to allow it to stand its own mass. This thesis proposes a conceptual plan for the application of the clamping- and bending-end conditions to the glass substrate handler. To verify proposed plan, the non-contact 3 dimensional measuring instrument is developed. The composition of the 3 dimensional measuring instrument measures shape of the product using X-Y stage robot and laser distance sensor. X-Y stage robot and laser distance sensor are controlled by LabVIEW language. To calibrate measuring instrument, the direction conversion of the Euler angle was used. In order to confirm deflection of the glass substrate, the experiment was carried out at the bending end boundary condition and the proposed effect was verified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05a
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• pp.153-157
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• 2002

This paper deals with the relationships between MgO manufacturing condition and misfiring at low temperature. The characteristics of MgO are affected by substrate temperature and MgO deposition current. In this study. the. substrate temperature was varied from $100^{\circ}C$ to $200^{\circ}C$. And the MgO deposition current was varied from 5mA to 20mA. As a result. the misfiring at low temperature was decreased in the panels with substrate temperature $200^{\circ}C$ and MgO deposition current 5mA. These results may be explained that the higher substrate temperature and lower MgO deposition current makes the denser film formation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.4
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• pp.289-293
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• 2007

ZnO thn films are grown on five kinds of oxide substrates including $c-Al_2O_3(0001),\;r-Al_2O_3(01-12)$, MgO(100), MgO(111), $NdGaO_3(110)$ by rf magnetron sputtering and effects substrate types on properties of ZnO thin films ate investigated. In order to compare the substrate effects one growth condition is selected and all the films are grown by the same growth condition. Structural and optical properties of the ZnO films ate different depending on the substrates although the films ate not epitaxial but polycrystalline. The ZnO film grown on $NdGaO_3(100)$ substrate shows the best overall properties among the films grown on substrates investigated in this study.

• 한국전산유체공학회:학술대회논문집
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• 2009.11a
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• pp.103-108
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• 2009

The droplet impact and merging process on a flat substrate with contact angle hysteresis is numerically studied. The droplet deformation is determined by an improved level-set method employing a sharp-interface technique for the stress condition at the liquid-gas interface and the contact angle condition at the liquid-gas-solid interline. Based on the computations, the droplet impact and merging pattern is investigated to find the optimal condition in manufacturing a micro-line. The effects of dynamic contact angles and droplet spacing on droplet motion are quantified.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.429-433
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• 2013

PTFE composites for use of microwave substrate were fabricated by impregnation and heat treatment fabrication with glass fabric. This study shows dielectric properties such as dielectric constant and loss can be controlled by thickness of PTFE composite with change of pressure condition in heating press process. The dielectric constant of the PTFE composites has decreasing tendency as given higher pressure condition. The dielectric loss has similar result too. Especially, the case of the dielectric loss was affected by the condition of pressure at heating press and had the best performance under 3 MPa. In order to see the reason why thickness conditions make different, their microstructures were also observed.

• Journal of Welding and Joining
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• v.17 no.2
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• pp.61-65
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• 1999

Because of the need for packages which accommodate high pin count, high density and high speed device, PBGA(plastic ball grid array) package gets more spotlight. But the substrate material which is used for PBGA package is in nature susceptible to moisture penetration. The objective of the study is to find out the path of delamination in the stacked structure of substrate. To increase the adhesion between the cooper laminate and PSR(photo solder resist) which is the weakest part, experiments were performed by changing parameters of printing pre-treatment and post-treatment process. As a result of experiments, the factor effects on the adhesion between the cooper laminate and PSR is caused by all of the pre-treatment and post-treatment condition. A considerable change was observed depending on the amount of UV irradiation after thermal cure which is typical of printing post-treatment condition rather than pre-treatment condition.

• Journal of the Optical Society of Korea
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• v.17 no.3
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• pp.269-274
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• 2013

The effect of diffusing substrate and pillow lenses on the outcoupling efficiency of organic light-emitting diodes (OLEDs) was studied by optical simulation based on the point-dipole model. The diffusing substrate included Mie scatterers by which the condition of total internal reflection could be broken. The finite-difference time-domain method was used to obtain the intensity distribution on the transparent electrode of an OLED, which was used as a light source to carry out a ray-tracing simulation of the OLED and the diffusing substrate. It was found that the outcoupling efficiency of the OLED was sensitive to the thickness of organic layers and could be increased by 21.0% by adopting a diffusing substrate in which Mie scatterers whose radius was $2.0{\mu}m$ were included at the density of $10^7mm^{-3}$ and by 65.5% by forming one pillow lens with the radius of 2 mm on the front surface of the glass substrate. This study revealed that the outcoupling efficiency could be improved by adopting diffusing substrate and pillow lenses along with the optimization of the thickness of each layer in the OLED.