Bias-enhanced Nucleation of Diamond in Hot Filament CVD

열필라멘트 CVD에서 전압 인가에 의한 다이아몬드의 핵생성 촉진

  • Choi, Kyoon (Dept. of Mater. Sci. and Eng., Korea Advanced Institute of Sci. and Tech) ;
  • Kang, Suk-Joong L. (Dept. of Mater. Sci. and Eng., Korea Advanced Institute of Sci. and Tech) ;
  • Hwang, Nong-M. (Microstructure Science Group, Korea Research Institute of Standards and Science)
  • 최균 (한국과학기술원 재료공학과) ;
  • 강석중 (한국과학기술원 재료공학과) ;
  • 황농문 (한국표준과학연구원 미세조직그룹)
  • Published : 1997.06.01

Abstract

The effect of various processing parameters, in particular the substrate and filament temperature, on the nucleation of diamond has been studied for the hot filament CVD process with a negative bias on the substrate. As far as the substrate temperature was maintained around the critical temperature of 73$0^{\circ}C$, the nucleation of diamond increased with increasing filament temperature. The maximum nucleation density of ~ 2$\times$109/$\textrm{cm}^2$ was obtained under the condition of filament temperature of 230$0^{\circ}C$, substrate temperature of 75$0^{\circ}C$, bias voltage of 300V, methane concentration of 20%, and deposition time of 2 hours. This nucleation density is about the same as those obtained in previous investigations. For fixed substrate temperatures, the nucleation density varies up to about 103 times depending on experimental conditions. This result is different from that of Reinke, et al. When the substrate temperature was above 80$0^{\circ}C$, a silkworm~shaped carbon phase was co-deposited with hemispherical microcrystalline diamond, and its amount increased with increasing substrate temperature. The Raman spectrum of the silkworm-shaped carbon was the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the same as that of graphitic soot. The silkworm-shaped carbon was etched and disappeared under the deposition condition of diamond, implying that it did not affect the nucleation of diamond.

Keywords

References

  1. Appl. Phys. Lett. v.46 no.2 Growth of Diamond Thin Films by Electron Assisted Chemical Vapor Deposition A. Sawabe;T. Inuzuka
  2. Appl. Phys. Lett. v.58 no.10 Generation of Diamond Nuclei by Electric Field in Plasma Chemical Vapor Deposition S. Yugo;T. Kanai;T. Kimura;T. Muto
  3. Diamond Relat Mater v.4 Studies on Nucleation Process in Diamond CVD : an Overview of Recent Developments H. Liu;D.S. Dandy
  4. Appl. Phys. Lett v.60 no.6 Textured Diamond Growth on(100)-Sic Via Microwave Plasma Chemical Vapor Deposition B.R. Stoner;J.T. Glass
  5. Appl. Phys. Lett v.62 no.26 Epitaxial Diamond Thin Films on (001) Silicon Substrates X. Jiang;C.-P. Klages;R. Zachai;M. Hartweg;H.-J. Fusser
  6. Diamond Relat Mater v.3 Oriented CVD Diamond Films: Twin Formation, Structure and Morphology C. Wild;R. Kohl;N. Herres;W. Muller-Sebert;P. Koidl
  7. Diamond Relat Mater. v.4 Epitaxy of Diamond on Silicon D.K. Milne;P.G. Roberts;P. John;M.G. Jubber;M. Liehr;J.J.B. Wilson
  8. Appl. Phys. Lett. v.68 no.11 Azimuthal Rotation of Diamond Crystals Epitaxially Nucleated on Silicon {001} T. Tachibana;K. Hayashi;K. Kobashi
  9. J. Mater. Res. v.10 no.2 Nucleation and Selcted Area Deposition of Diamond by Biased Hot Filament Chemical Vapor Deposition W. Zhu;F.R. Sivazhan;B.R. Stoner;J.T. Glass
  10. Appl. Phys. Lett v.68 no.17 Electron-emission-enhanced Diamond Nucleation on Si by Hot Filament Chemical Vapor Deposition Q. Chen;Z. Lin
  11. Appl. Phys. Lett. v.68 no.2 Epitaxially Oriented Growth of Diamond on Silicon by Hot Filament Chemical Vapor Deposition Q Chen;L.-X. Wang;Z. Zhang;J. Yang;Z. Lin
  12. Diamond Relat Mater v.4 Effect of Bias Enhanced Nucleation on the Nucleation Density of Diamond in Microwave Plasma CVD Y. Ma;T. Tsurumi;N. Shinoda;O. Fukunaga
  13. Appl. Phys. Lett v.68 no.1 Investigation of the Nucleation Mechanism in Biasenhanced Diamond Deposition P. Rcinke;P. Kania;P. Oelhafen;R. Guggenheim
  14. Diamond Relat Mater v.2 The Effect of Substrate Bias Voltage on the Nucleation of Diamond Crystals in a Microwave Plasma Assited Chemical Vapor Deposition Process X. Jiang;R. Six;C.-P. Klages;R. Zachai;M. Hartweg;H.-J. Fubei
  15. Diamond Relat. Mater v.4 Experimental Characterization of Biasenhanced Nucleation of Diamond on Si J. Gerber;S. Sattel;K. Jung;H. Ehrhardt;J. Robertson
  16. Appl. Phys. Lett. v.65 no.20 Theoretical Study of Field Emission From Diamond Z.-H. Huang;P.H. Cutler;N.M. Miskovsky;T.E. Sullivan
  17. Diamond Relat. Mater v.5 Electron Field Emission From a Cesiated NEA Diamond(100) Surface: an Activation Concept O.M. Kuttel;O. Groning;E. Schaller;L. Diederich;P. Groning;L. Schlapbach
  18. Diamond Relat. Mater. v.2 Epitaxial Nucleation of Diamond on β-SiC via Bias-enhanced Microwave Plasma Chemical Vapor Deposition B.R. Stoner;G.H. Ma;S.D. Wolter;W. Zhu;Y.-C. Wang;R.F. Davis;J.T. Glass
  19. Glow Discharge Processes B. Chapman
  20. J. Appl. Phys. v.75 no.10 Bias-enhanced Nucleation of Diamond during Microwave-assisted Chemical Vapor Deposition B.W. Scheldon;R. Csencsits;J. Rankin;R.E. Boekenhauer;Y. Shigesato
  21. J. Mater. Res. v.9 no.4 Evaluation of a Substrate Pretreatment for Hot Filament CVD of Diamond K.L. Menningen;M.A. Childs;H. Toyoda.L.W. Anderson;J.E. Lawler
  22. Diamond Relat. Mater. v.2 Nucleation mechanisms of diamond in plasma chemical vapor deposition S. Yugo;T. Kimura;T. Kanai
  23. Appl. Phys. Lett v.56 no.14 Surface-enhanced Raman Spectroscopy of Chemical Vapor Deposited Diamond Films D.S. Knight;R. Weimer;L. Pilione;W.B. White
  24. Nature v.364 no.12 Diamond Nucleated by Hydrogenation of the Edges of Graphitic Precursors W.R.L. Lambrecht;C.H. Lee;B. Segall;J.C. Angus;Z. Li;M. Sunkara