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Radiation Power Control by Means of Absorptive Material Arrangement in an Enclosure (흡음재 배치를 통한 닫힌 공간에서의 소음원 방사 파워 제어)

  • 조성호;김양한
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2004.05a
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    • pp.688-691
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    • 2004
  • We have studied the possibility of global noise reduction by the sound power control through selection of distribution and impedance of absorptive materials. It is necessary to investigate the relation between the global sound energy in the field and the total sound power radiated by sources. In the previous work (1,2), the authors presented a useful design method to change boundary condition that can be useful to reduce noise in acoustically small enclosures. The possibility of total acoustic potential energy reduction by acoustic source power control is examined in an acoustically small cavity. Using acoustic energy balance equation, the relation between global noise control performance and absorptive material's arrangement/impedance is deduced. Numerical simulation is performed to interpret its physical meaning in terms of absorbent's distribution and impedance.

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A Study on Photoresist Stripping Using High Density Oxygen Plasma (고밀도 산소 플라즈마를 이용한 감광제 제거공정에 관한 연구)

  • Jung, Hyoung-Sup;Lee, Jong-Geun;Park, Se-Geun;Yang, Jae-Kyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.2
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    • pp.95-100
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    • 1998
  • A helical inductively coupled plasma asher, which produces low energy and high density plasma, has been built and investigated for photoresist stripping process. Oxygen ion density in the order of $10^{11}/cm^3$ is measured by Langmuir probe, and higher oxygen radical density is observed by Optical Emission Spectrometer. As RF source power is increased, the plasma density and thus photoresist stripping rate are increased. Independent RF bias power to the wafer stage provides a dc bias to the wafer and an ability to add the ion assisted reaction. At 1 KW of the source power, the coupling mechanism of the RF power to the plasma is changed from the inductive mode to the capacitive one at about 1 Torr. This change causes the plasma density and ashing rate decreases abruptly. The critical pressure of the mode change becomes larger with larger RF power.

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A Study on the Surface Treatment of CNT Paste Emitter by Ar Ion Irradiation (아르곤 이온빔을 이용한 CNT 페이스트 에미터의 표면처리에 관한 연구)

  • Kwon, Sang-Jik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.20 no.5
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    • pp.456-461
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    • 2007
  • In this study, a surface treatment method using accelerated Ar ions was experimented for exposing the carbon nanotubes (CNT) from the screen-printed CNT paste. After making a cathode electrode on the glass substrate, photo sensitive CNT paste was screen-printed, and then back-side was exposed by UV light. Then, the exposed CNT paste was selectively remained by development. After post-baking, the remained CNT paste was bombarded by accelerated Ar ions for removing some binders and exposing only CNTs. As results, the field emission characteristics were strongly depended on the accelerating energy, bombardment time, and the power of RF plasma ion source. When Ar ions accelerated with 100 eV energy from the 100 W RF plasma source are bombarded on the CNT paste surface for 10 min, the emission level and the uniformity were best.

Effects of AlN Ratio on Microstructure of AlN Films Grown by PAMBE (PAMBE를 이용하여 성장된 AlN 박막의 미세구조에 미치는 Al/N 비율 영향)

  • 홍성의;한기평;백문철;조경익;윤순길
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.12
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    • pp.972-978
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    • 2001
  • Some effects of Al/N ratio on microstructure of AlN films grown on Si(111) substrates by PAMBE were investigated. Al/N ratio was controlled by rf power of N$_2$ plasma source system. Al excess or N excess conditions were obtained below or above 350 W rf power, respectively. Surface roughness and morphology of AlN film grown at Al/N=1.0 showed the best result. Under Al excess condition, it was suggested that excess Al atoms which did not contribute to the growth of AlN film prevent the normal crystal growth and make abnormal growth of some columns. However, under N excess condition, it was explained that some of the excess active N source turned into gas state and then desorbed out from substrate.

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Neutron Count Rate Measurement of $UO_2$ powder by Neutron Source

  • Kang Hee-Young;Koo Gil-Mo;Ha Jang-Ho;Kim Ho-Dong;Yang Myung-Seung
    • Proceedings of the Korean Radioactive Waste Society Conference
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    • 2005.06a
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    • pp.344-349
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    • 2005
  • Neutron count rate measurements to assay fissile content of uranium powder have been carried out in a neutron counter. The induced fission neutrons by Cf-252 neutron source are counted as the variation of fissile material in fuel material. The measured counts are compared with equivalent results obtained from calculation. It shows that the measured neutron counts versus quantity of $UO_2$ powder enrichment agreed reasonably well with the calculated values.

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AN ASSESSMENT OF THE RADIATION DOSE RATE DUE TO AN OCCURRENCE OF THE DEFECT ON THE SPENT NUCLEAR FUEL ROD

  • Lee, Sang-Hun;Moon, Joo-Hyun
    • Journal of Radiation Protection and Research
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    • v.34 no.3
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    • pp.144-150
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    • 2009
  • This study examines how much the radiation dose rate around it varies if a crack occurs on the spent nuclear fuel rod. The spent nuclear fuel rod to be examined is that of Kori unit 3&4. The source terms are evaluated using the ORIGEN-ARP that is part of the version 5.1 of the SCALE package. The radiation dose rate is assessed using the TORT. To check if the structure of a fuel rod is appropriately modeled in the TORT calculation, the calculation results by the TORT are compared with those by the ANISN for the same case. From the code simulation, it is known that if a crack occurs on the spent nuclear fuel rod, the neutron dose rate varies depending on what material is the crack filled with, but the gamma dose rate varies irrespective of type of the material that the crack is filled with.

Potential Barrier Shift Caused by Channel Charge in Short Channel GaAs MESFET (Short Channel GaAs MESFET의 채널전하분포와 채널전하에 의한 전위장벽의 변화)

  • Sub, Won-Chang;Lee, Myung-Soo;Ryu, Se-Hwan;Han, Deuk-Young;Ahn, Hyung-Keun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.9
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    • pp.793-799
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    • 2006
  • In this paper, the gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. the gate to drain current has been obtained with ground source. The difference between two currents has been tested and proves that the electric field generated by channel charge effect against the image force lowering.

Properties of Electron Temperature and Density in Inductively Coupled Plasma of Xenon (유도결합형 제논 플라즈마의 전자온도, 밀도 특성)

  • Her, In-Sung;Yang, Jong-Kyung;Lee, Jong-Chan;Park, Dae-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05b
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    • pp.41-45
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    • 2005
  • In this paper, parameters of electron temperature and density for the mercury-free lighting-source were measured to diagnosis and analyze in Xe based inductively coupled plasma(ICP). In results at several dependences of 20~100 mTorr Xenon pressure, 50~200W RF power and horizontal distribution were especially mentioned. When Xe pressure was 20mTorr and RF power was 200W, the electron temperature and density were respectively 3.58eV and $3.56{\times}10^{12}cm^{-3}$. The key parameters of Xe based ICP depended on Xe pressure more than RF power that could be verified. A high electron temperature and low electron density with a suitable Xe pressure are indispensible parameters for Xe based ICP lighting-source.

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Design of Mixer using Neutralization Technique (Neutralization을 이용한 주파수 변환기 설계)

  • Choi, Moon-Ho;Choi, Won-Ho;Kim, Yeong-Seuk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.4
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    • pp.311-320
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    • 2008
  • In this paper, a 2.4 GHz low-voltage CMOS double-balanced down-conversion mixer using neutralization technique has been proposed and verified by circuit simulations and measurements. The grounded source structure was used for low-voltage operation. The neutralization technique was used to improve a conversion gain. The proposed mixer is fabricated in $0.25{\mu}m$ CMOS process for a 2.4 GHz wireless receiver. The mixer consumes 1.94 mW and gives conversion gain of 5.66 dB, input IP3 of 0.7 dBm and P1dB of -11.2 dBm at 1.5 V power supply. Measured results for the designed mixer show improved conversion gain of 2.86 dB over conventional mixer of grounded source structure.

Correlation between Dynamic Characteristics of Isolation Material and Impact Noise Reduction of Light-weight Impact Source (충격음 저감재의 동특성과 실험실 경량충격음레벨 저감량의 상관관계)

  • 이주원;정갑철;권영필
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2003.05a
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    • pp.191-195
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    • 2003
  • 충격음 저감재의 동탄성계수와 감쇠계수는 차단성능을 평가하는데 있어 중요한 물성치가 된다. 저감재의 동탄성계수는 뜬바닥구조의 고유진동수를 결정짓게 되며, 저감재의 동탄성계수가 높을수록, 즉 고유진동수가 높아짐에 따라 실험실 경량충격음레벨 저감량은 지수함수적으로 감소됨을 실험을 통해 알 수 있다. 또한, 저감재를 포함한 뜬바닥구조를 1자유도 진동계로 가정한 이론값과 실험실 경량충격음레벨 저감량의 결과가 비교적 잘 일치하는 것으로 나타났으며, 이 때 감쇠계수의 영향은 반드시 고려되어야 한다.

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