Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Effects of AlN Ratio on Microstructure of AlN Films Grown by PAMBE

PAMBE를 이용하여 성장된 AlN 박막의 미세구조에 미치는 Al/N 비율 영향

  • 홍성의 (한국전자통신연구원 정보저장소자팀) ;
  • 한기평 (한국전자통신연구원 정보저장소자팀) ;
  • 백문철 (한국전자통신연구원 정보저장소자팀) ;
  • 조경익 (한국전자통신연구원 정보저장소자팀) ;
  • 윤순길 (충남대학교 재료공학과 세라믹박막실)
  • Published : 2001.12.01
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Abstract

Some effects of Al/N ratio on microstructure of AlN films grown on Si(111) substrates by PAMBE were investigated. Al/N ratio was controlled by rf power of N$_2$ plasma source system. Al excess or N excess conditions were obtained below or above 350 W rf power, respectively. Surface roughness and morphology of AlN film grown at Al/N=1.0 showed the best result. Under Al excess condition, it was suggested that excess Al atoms which did not contribute to the growth of AlN film prevent the normal crystal growth and make abnormal growth of some columns. However, under N excess condition, it was explained that some of the excess active N source turned into gas state and then desorbed out from substrate.

Keywords

References

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