Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Potential Barrier Shift Caused by Channel Charge in Short Channel GaAs MESFET

Short Channel GaAs MESFET의 채널전하분포와 채널전하에 의한 전위장벽의 변화

  • Published : 2006.09.01
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Abstract

In this paper, the gate leakage current is first calculated using the experimental method between gate and drain by opening source electrode. the gate to drain current has been obtained with ground source. The difference between two currents has been tested and proves that the electric field generated by channel charge effect against the image force lowering.

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References

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