• 제목/요약/키워드: source current density

검색결과 309건 처리시간 0.025초

백금 촉매가 증착된 미소돌기 전극과 유한 연료를 가지는 극소형 직접메탄을 연료전지의 제작 및 성능 평가 (Fabrication and Test of Micro Direct Methanol Fuels using Platinum Sputtered Microcolumn Electrodes with a Limited Fuel Source)

  • 서영호;조영호
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제53권4호
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    • pp.218-224
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    • 2004
  • We present a miniature Direct Methanol Fuel Cell (micro-DMFC) using platinum sputtered microcolumn electrodes with a limited amount of fuel. We use the microcolumn electrode in order to improve the power density of the micro-DMFC that consists of two electrodes and polymer electrolyte. We also design the built-in fuel chamber in the anode for the portable electronics applications. We design and fabricate both microcolumn and planar electrodes, having an identical projective area of 5mm${\times}$5mm. The diffusion current density of the microcolumn electrode is 1.73 times higher than that of the planar electrode at electrode potential of 1.1V in the half-cell test. The micro-DMFC based on the microcolumn electrodes shows the maximum power of 10.8$\pm$7.54㎼(43.23$\pm$0.16㎼/$\textrm{cm}^2$) at the projective area of 5mm${\times}$5mm, while the planar electrode micro-DMFC shows the maximum power of 0.81$\pm$0.42㎼(3.24$\pm$1.68㎼/$\textrm{cm}^2$) at the same projective area. The micro-DMFC based on the microcolumn electrodes shows 13 times higher power density that the micro-DMFC based on the planar electrodes does.

MIAB용접에서 아크 회전을 위한 전자기 시스템에 관한 연구 (A Study on an Electro-Magnetic System far Arc Rotating in MIAB Welding)

  • 최동혁;김재웅
    • Journal of Welding and Joining
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    • 제19권4호
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    • pp.391-398
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    • 2001
  • MIAB welding method uses a rotating arc as its heat source and is known to be efficient in pipe butt welding. The arc is rotated around the weld line by the electro-magnetic force resulting from the interaction of arc current and magnetic field. This paper is concerned with the experiment of initial stage for process control, monitoring for weld quality, and the design of coil system which is efficient of flux generation and concentration. A coil system for the generation of magnetic flux was designed and constructed. Magnetic flux density and arc rotating behavior are important factors in MIAB welding, so the relations between these factors and process parameters were investigated. Various experiments were performed for the steel pipes(48.1mm O.D and 2.0mm thickness). The magnetic flux density is increased by increasing exciting current and decreasing gap size. The maximum of arc rotating frequency is affected by exciting current and gap size. However, the variations of arc rotating frequency during welding and then the melting process are mainly influenced by welding current. Thus, it is considered that the results of this study can be used as important data on the monitoring for weld quality and the design of efficient coil system.

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Current-Source Pulse Density Modulated Parallel Resonant Inverter with A Single Resonant Snubber and Its Unique Application

  • Wang Y.X.;Koudriavtsev O.;Konishi Y.;Okuno A.;Nakaoka M.;Lee H.W.
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 Proceedings ICPE 01 2001 International Conference on Power Electronics
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    • pp.261-265
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    • 2001
  • In this paper, a current-source type parallel indudor compensated load resonant high-frequency soft switching inverter using IGBTs for driving the newly-produced silent discharge type ozone generating tube and excimer lamp for UV generation which incorporate a single switched capacitor resonant snubber between the port in DC busline side is presented, together with its pulse modulated unique output power regulation characteristics.

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자기정렬된 낮은 농도의 소오스를 갖는 트렌치 바디 구조의 IGBT (A Self-Aligned Trench Body IGBT Structure with Low Concentrated Source)

  • 윤종만;김두영;한민구;최연익
    • 대한전기학회논문지
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    • 제45권2호
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    • pp.249-255
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    • 1996
  • A self-aligned latch-up suppressed IGBT has been proposed and the process method and the device characteristics of the IGBT have been verified by numerical simulation. As the source is laterally diffused through the sidewall of the trench in the middle of the body, the size of the source is small and the doping concentration of the source is lower than that of the p++ body and the emitter efficiency of the parasitic npn transistor is low so that latch-up may be suppressed. No additional mask steps for p++ region, source, and source contact are required so that small sized body can be obtained Latch-u current density higher than 10000 A/cm$^{2}$ have been achieved by adjusting the process conditions.

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자연 산화막과 엑시머 레이저를 이용한 Poly-Si/a-Si 이중 박막 다결정 실리콘 박막 트랜지스터 (Poly-Si Thin Film Transistor with poly-Si/a-Si Double Active Layer Fabricated by Employing Native Oxide and Excimer Laser Annealing)

  • 박기찬;박진우;정상훈;한민구
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제49권1호
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    • pp.24-29
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    • 2000
  • We propose a simple method to control the crystallization depth of amorphous silicon (a-Si) deposited by PECVD or LPCVD during the excimer laser annealing (ELA). Employing the new method, we have formed poly-Si/a-Si double film and fabricated a new poly-Si TFT with vertical a-Si offsets between the poly-Si channel and the source/drain of TFT without any additional photo-lithography process. The maximum leakage current of the new poly-Si TFT decreased about 80% due to the highly resistive vertical a-Si offsets which reduce the peak electric field in drain depletion region and suppress electron-hole pair generation. In ON state, current flows spreading down through broad a-Si cross-section in the vertical a-Si offsets and the current density in the drain depletion region where large electric field is applied is reduced. The stability of poly-Si TFT has been improved noticeably by suppressing trap state generation in drain region which is caused by high current density and large electric field. For example, ON current of the new TFT decreased only 7% at a stress condition where ON current of conventional TFT decreased 89%.

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A Formation of the $Fluorocarbonated-SiO_2$ Films on Si(100) ASubstrate by $O_2/FTES-High$ Density Plasma CVD

  • Oh, Kyoung-Suk;Kang, Min-Sung;Lee, Kwang-Man;Kim, Duk-Soo;Kim, Doo-Chul;Choi, Chi-Kyu;Yun, Seak-Min;Chang, Hong-Young
    • 한국진공학회지
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    • 제7권s1호
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    • pp.106-117
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    • 1998
  • Fluorocarbonated-SiO2 films were deposited on p-type Si(100) substrate using FSi$(OC_2H_5)_3$ (FTES), and $O_2$ mixture gases by a helicon plasms source. High density $O_2$/FTES/Ar plasma of ~$10^{12} \textrm{cm}^{-3}$ is obtained at low pressure (<3mTorr) with RF power above 900 W in the helicon plasma source. Optical emission spectroscopy (OES) is used to study the relation between the relative densities of the radicals and the film properties. The FTES and $O_2$ gases are greatly dissociated at the helicon mode that is launched at the above threshold plasma density. FTIR and XPS spectra shows that the film has Si-F, and C-F bonds during the formation process of the film which may lower the dielectric constant greatly. The relative dielectric constant, leakage current density, and dielectric breakdown voltage are about 2.8, $8\times10^{-9}\textrm{A/cm}^2$, and > 12 MV/cm, respectively.

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세상에서 가장 얇은 그래핀 발광 소자 (The World's Thinnest Graphene Light Source)

  • 김영덕
    • 진공이야기
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    • 제4권3호
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    • pp.16-20
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    • 2017
  • Graphene has emerged as a promising material for optoelectronic applications including as ultrafast and broadband photodetector, optical modulator, and nonlinear photonic devices. Graphene based devices have shown the feasibility of ultrafast signal processing for required for photonic integrated circuits. However, on-chip monolithic nanoscale light source has remained challenges. Graphene's high current density, thermal stability, low heat capacity and non-equilibrium of electron and lattice temperature properties suggest that graphene as promising thermal light source. Early efforts showed infrared thermal radiation from substrate supported graphene device, with temperature limited due to significant cooling to substrate. The recent demonstration of bright visible light emission from suspended graphene achieve temperature up to ~3000 K and increase efficiency by reducing the heat dissipation and electron scattering. The world's thinnest graphene light source provides a promising path for on-chip light source for optical communication and next-generation display module.

Structure and Source of Low Salinity Water Observed During May in the Cheju Strait

  • Byun, Sang-Kyung
    • Journal of the korean society of oceanography
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    • 제35권4호
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    • pp.170-178
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    • 2000
  • Low salinity water was observed during May in the Cheju Strait. Its structure and source were studied by using both the hydrographic data collected not only in the Cheju Strait during 1987-1989 but also in the wider area around Cheju Island extending to the Bank of Changjiang river in 1994 and the current data taken in the Strait during 1987-1989. The water had lower values of temperature, salinity, and density compared with the surrounding water and it was found in the surface layer outside of Tsushima Current Water 10-50 km off Cheju coast. The density of low salinity water was more dependent on salinity than on temperature. The low salinity water flowed into the Strait from the west as a series of intermittent waters whose size was variable in width and in thickness. The low salinity water was originated from the Chanajiang River Diluted Water. In the Cheju Strait, the water showed changes within 3 days on time and 30-50 km on space, and its sudden appearance was marked especially in May. Such strong variability and sudden appearance may be attributed to the beginning stage in May when the fresh water of Changjiang River Diluted Water starts to arrive in the Cheju Strait.

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MgO 박막의 $\gamma$ 계수 측정용 이온빔원의 시작 및 동작특성 (Some Characteristics of Ion Beam Source for $\gamma$-Coefficient Measurement of MgO Thin Film)

  • 정신수;김준호;김희제;조정수;박정후;박차수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1997년도 하계학술대회 논문집 E
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    • pp.1752-1754
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    • 1997
  • The Kaufman type ion beam source with focusing lens was prepared to measure $\gamma$-coefficient of MgO thin film. Initial discharge of the system was started with the discharge voltage of 25V, the cathode filament current of 5.5A at the constant magnetic field of 150G. The system shows the maximum ion current density of $120{\mu}A/cm^2$, energy dispersion of 200eV and beam divergence of $30^{\circ}$ under the condition of Ar gas pressure $2.5{\times}10^{-4}Torr$, the beam voltage of 500V, the discharge voltage of 90V, the accelerator voltage of -200V and the cathode filament current of 6.1A. When the focusing lens was installed onto the ion beam source, the spreadness diameter of ion beam was about 10mm.

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그래핀 나노플레이트에 의한 $MgB_2$의 임계전류밀도 향상 (Improved Critical current Density in $MgB_2$ by Graphene nano-platelets)

  • ;정국채;장세훈;김정호
    • Progress in Superconductivity
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    • 제14권1호
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    • pp.34-38
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    • 2012
  • The effect of graphene inclusion in the ex-situ $MgB_2$ was analyzed with the help of resistivity behavior and critical current density studies. Amount of graphene was systematically varied from 0% for pristine sample to 3% by the weight of $MgB_2$. Graphene that is considered as a good source of carbon was found to be intact without any significant carbon doping in $MgB_2$ structure as reveled by XRD measurements. There was no signature of graphene inclusion as far as the superconducting transition is concerned which remained same at 39 K for all the samples. The transition width being sensitive to defect doping remained more or less about 2 K for all the samples showing no variation due to doping. Although there was no change in the superconducting transition or transition width, the graphene doped sample showed noticeable decrease in the overall resistivity behavior with respect to decrease in temperature. The graphene inclusion acted as effective pinning centers which have enhanced the upper critical field of these samples.