• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.433-433
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• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• Journal of Powder Materials
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• v.19 no.3
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• pp.177-181
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• 2012

Copper composite materials have attracted wide attention for energy applications. Especially $CuInS_2$ has a desirable direct band gap of 1.5 eV, which is well matched with the solar spectrum. $CuInS_2$ nanoparticles could make it possible to develop color-tunable $CuInS_2$ nanoparticle emitter in the near-infrared region (NIR) for energy application and bio imaging sensors. In this paper, $CuInS_2$ nanoparticles were successfully synthesized by thermo-decomposition methods. Surface modification of $CuInS_2$ nanoparticles were carried out with various semiconductor materials (CdS, ZnS) for enhanced optical properties. Surface modification and silica coating of hydrophobic nanoparticles could be dispersed in polar solvent for potential applications. Their optical properties were characterized by UV-vis spectroscopy and photoluminescence spectroscopy (PL). The structures of silica coated $CuInS_2$ were observed by transmission electron microscopy (TEM).

• Journal of Electrochemical Science and Technology
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• v.10 no.3
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• pp.313-320
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• 2019

In this study, cobalt diselenide ($CoSe_2$) and the composites ($CoSe_2@RGO$) of $CoSe_2$ and reduced graphene oxide (RGO) were synthesized by a facile hydrothermal reaction using cobalt ions and selenide source with or without graphene oxide (GO). The formation of $CoSe_2@RGO$ composites was identified by analysis with X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy and scanning electron microscopy (SEM). Electrochemical analyses demonstrated that the $CoSe_2@RGO$ composites have excellent catalytic activity for the reduction of $I_3{^-}$, possibly indicating a synergetic effect of $CoSe_2$ and RGO. As a consequence, the $CoSe_2@RGO$ composites were applied as a counter electrode in DSSC for the reduction of redox couple electrolyte, and exhibiting the comparable power conversion efficiency (7.01%) to the rare metal platinum (Pt) based photovoltaic device (6.77%).

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1737-1739
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• 2004

Diamond-like carbon (DLC) films were prepared with RF-PECVD (Plasma Enhanced Chemical Vapor Deposition) method on coming glass and silicon substrates using methane ($CH_4$) and hydrogen ($H_2$) gases. We examined the effects of $CH_4$ to $H_2$ ratios on tribological and optical properties of the DLC films. The structure and surface morphology of the films were examined using Raman spectroscopy and atomic force microscopy (AFM). The hardness of the DLC film was measured with nano-indentor. The optical properties of DLC thin film were investigated by UV/VIS spectrometer and ellipsometry. And also, solar cells were fabricated using DLC as antireflection coating before and after coating DLC on silicon substrate and compared the efficiency.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.97.2-97.2
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• 2010

유리기판을 이용하여 제조되는 미세 결정질 실리콘 박막 태양전지에서 진성 반도체층(i ${\mu}c$-Si:H layer, i층)은 태양전지의 광 흡수층으로 사용되기 때문에 그 특성은 매우 중요하다. 특히, i층의 결정분율 변화는 태양광의 흡수파장 및 효율을 결정하여 준다. 본 연구에서는 i층 증착시 $SiH_4$ 가스의 농도 변화 및 $SiH_4$ 가스 profiling을 통하여 i층의 결정분율을 변화하였으며, 이에 따른 i층 단위박막과 미세결정질 태양전지 특성변화를 분석 하였다. i층의 $SiH_4$ 가스 농도가 증가함에 따라 i층 단위박막의 결정분율은 증가하였으며, 전기 전도도는 감소하였다. 또한, i층의 $SiH_4$ 가스 농도를 점차 증가하며 profiling 하여 증착한 박막은 동일 가스 농도로 증착한 박막보다 전기 전도도가 감소하였고, 증착속도는 증가하였다. 이와 같은 다양한 i층들은 'Raman spectroscopy'를 통하여 결정분율 변화를 측정하였다. 또한, 이 박막들을 광 흡수층으로 사용하는 미세결정질 태양전지를 제조하고, 태양전지의 효율, 양자효율, 암전류 특성들을 단위박막 특성과 연계하여 분석하였다.

• Bulletin of the Korean Chemical Society
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• v.35 no.6
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• pp.1647-1653
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• 2014

9,10-Bis(bromomethyl)phenanthrene reacted with fullerenes via a Diels-Alder reaction to give phenanthrene-substituted fullerene mono-adducts (PCMA) and bis-adducts (PCBA) as electron acceptors for organic photovoltaic cells (OPVs). The syntheses of the fullerene derivatives were confirmed by $^1H$ $^{13}C$ NMR spectroscopy and MALDI-TOF mass spectrometry. PCMA and PCBA showed better light absorption in the UV-visible region than $PC_{61}BM$. Their electrochemical properties were measured using cyclic voltammetry. Accordingly, the lowest unoccupied molecular orbital (LUMO) energy levels of PCMA and PCBA were -3.66 and -3.57 eV, respectively. Photovoltaic cells were fabricated with a ITO/PEDOT:PSS/poly(3-hexylthiophene)(P3HT):acceptor/LiF/Al configuration, where P3HT and PCBA are the electron donors and acceptors, respectively. The polymer solar cell fabricated using the P3HT:PCBA active layer showed a maximum power conversion efficiency of 0.71%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.330-333
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• 2002

The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.

• 한국신재생에너지학회:학술대회논문집
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• 2007.11a
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• pp.309-311
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• 2007

Supramolecules containing double hydrogen bonding sites at their both chain ends were self-polymerized to become solid state polymer and were utilized to improve the efficiency of solid state DSSCs. Hydrogen bonding sites were attached at the chain ends of PEG of Mw=2000, such as pyrimethamine and glutaric acid. The solar cell with the solid state supramolecular polymer electrolyte resulted in the overall energy conversion efficiency of 4.63 % with a short circuit current density $(J_{sc})$ of 10.41 $mAcm^{-2}$, an open circuit voltage $V_{oc}$, of 0.71 V and a fill factor (FF) of 0.62 at one sun condition ([oligomer]:[1-methyl-3-propyl imidazolium iodide (MPII)]:$[I_2]$ = 20 : 1 : 0.19, active area = 0.16 $cm^2$, $TiO_2$ layer thickness = 10 ${\mu}m$). The ionic conductivity of the sol id state electrolyte was $5.11{\times}10^{-4}$ (S/cm). The cell performance was characterized by electrochemical impedance spectroscopy and ionic conductivity.

• Journal of Hydrogen and New Energy
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• v.24 no.5
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• pp.421-427
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• 2013

We report on the time dependent degradation of cell in dye-sensitized solar cells (DSSC). The photovoltaic performance of DSSC over a period of time was investigated in liquid electrolyte based on triiodide/iodide during six days. It was found that the short circuit current density ($j_{sc}$) of the cell dropped from 9.9 to $7mA/cm^2$ while efficiency (${\eta}$) of the cell decreased from 4.4 to 3.3%. The parameters corresponding to fundamental electronic and ionic processes in a working DSSC are determined from the electrochemical impedance spectrascopy (EIS) at open-circuit potential ($V_{oc}$). EIS study of the DSSC in the this work showed that the electron life time ${\tau}_r$ and chemical capacitance $C_{\mu}$ decreased significantly after six days. It was correlated the $j_{sc}$ and efficiency decreased after six days.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.351.2-351.2
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• 2014

Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than $10-3{\Omega}/cm$. Thus, the solar cell is the best example for which ITO has perfectly matching profile. In addition, when ITO is used as transparent conductive electrode, this material essentially has to have a proper work function with contact materials. For instance, heterojunction with intrinsic thin layer (HIT) solar cell could have both front ITO and backside ITO. Because each side of ITO films has different type of contact materials, p-type amorphous silicon and n-type amorphous silicon, work function of ITO has to be modified to transport carrier with low built-in potential and Schottky barrier, and approximately requires variation from 3 eV to 5 eV. In this study, we examine the change of work function for different sputtering conditions using ultraviolet photoelectron spectroscopy (UPS). Structure of ITO films was investigated by spectroscopic ellipsometry (SE) and scanning electron microscopy (SEM). Optical transmittance of the films was evaluated by using an ultraviolet-visible (UV-Vis) spectrophotometer