Proceedings of the Korean Vacuum Society Conference (한국진공학회:학술대회논문집)
- 2014.02a
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- Pages.351.2-351.2
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- 2014
Work Function Modification of Indium Tin Oxide Thin Films Sputtered on Silicon Substrate
- Oh, Gyujin (Department of Physics, Hanyang University) ;
- Kim, Eun Kyu (Department of Physics, Hanyang University)
- Published : 2014.02.10
Abstract
Indium tin oxide (ITO) has a lot of variations of its properties because it is basically in an amorphous state. Therefore, the differences in composition ratio of ITO can result in alteration of electrical properties. Normally, ITO is considered as transparent conductive oxide (TCO), possessing excellent properties for the optical and electrical devices. Quantitatively, TCO has transparency over 80 percent within the range of 380nm to 780nm, which is visible light although its specific resistance is less than