• 제목/요약/키워드: sodalime

검색결과 51건 처리시간 0.021초

비정질 실리콘 박막을 이용한 Sodalime-Sodalime 정전 열 접합 및 FEA Packaging 응용 (Sodalime-sodalime Electrostatic Bonding using Amorphous Silicon Interlayer and Its Application to FEA Packging)

  • 주병권;이덕중;최우범;김영조;이남양;오명환
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제48권9호
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    • pp.656-661
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    • 1999
  • As a fundamental study for FED tubeless packaging, sodalime-sodalime electrostatic bonding was performed by using on the developed bonding mechanism. Thebonding properties of the bonded sodalime-sodalime structure were investigated through SEM and SIMS analyses. Mo-tip FEA was vacuum-packaged by the developed bonding process and the packaged device generated the field emission current.

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정전 열 접합에 의한 진공전자소자의 패키징 (Packaging of Vacuum Microelectronic Device using Electrostatic Bonding)

  • 주병권;이덕중;오명환
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1998년도 추계학술대회 논문집 학회본부 C
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    • pp.1004-1006
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    • 1998
  • Mo-tip FED of 1 inch diagonal was vacuum sealed using sodalime-to-sodalime glass electrostatic bonding under $10^{-7}torr$. The bonding properties of the bonded sodalime-to sodalime structure were investigated and emission characteristic of packaged FED panel was measured.

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Pulsed DC 마그네트론 스퍼터링으로 제조한 소다라임 유리의 고투과 및 대전방지 박막특성 연구 (A study on the high transparent and antistatic thin films on sodalime glass by reactive pulsed DC magnetron sputtering)

  • 정종국;임실묵
    • 한국표면공학회지
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    • 제55권6호
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    • pp.353-362
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    • 2022
  • Recently, transmittance of photomasks for ultra-violet (UV) region is getting more important, as the light source wavelength of an exposure process is shortened due to the demand for technologies about high integration and miniaturization of devices. Meanwhile, such problems can occur as damages or the reduction of yield of photomask as electrostatic damage (ESD) occurs in the weak parts due to the accumulation of static electricity and the electric charge on chromium metal layers which are light shielding layers, caused by the repeated contacts and the peeling off between the photomask and the substrate during the exposure process. Accordingly, there have been studies to improve transmittance and antistatic performance through various functional coatings on the photomask surface. In the present study, we manufactured antireflection films of Nb2O5, | SiO2 structure and antistatic films of ITO designed on 100 × 100 × 3 mmt sodalime glass by DC magnetron sputtering system so that photomask can maintain high transmittance at I-line (365 nm). ITO thin film deposited using In/Sn (10 wt.%) on sodalime glass was optimized to be 10 nm-thick, 3.0 × 103 𝛺/☐ sheet resistance, and about 80% transmittance, which was relatively low transmittance because of the absorption properties of ITO thin film. High average transmittance of 91.45% was obtained from a double side antireflection and antistatic thin films structure of Nb2O5 64 nm | SiO2 41 nm | sodalime glass | ITO 10 nm | Nb2O5 64 nm | SiO2 41 nm.

Transition of Femtosecond Laser Ablation Mechanism for Sodalime Glass Caused by Photoinduced Defects

  • Jeoung, Sae-Chae;Choi, Jun-Rye;Park, Myung-Il;Park, Mi-Ra;Choi, Dae-Sik
    • Journal of the Optical Society of Korea
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    • 제7권3호
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    • pp.150-155
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    • 2003
  • Femtosecond laser ablation mechanism was systematically investigated on sodalime glass in ambient conditions. The ablation crater diameter was measured for varying numbers of laser pulses as for varying well as the laser fluence. The analysis of the results with a one dimensional spatial Gaussian fluence distribution reveals that the inherent ablation mechanism has been altered from a multi-photon process to a single photon excitation due to defect sites that have been accumulated by successive laser pulses. Furthermore, the transition between the two regimes was found to be a function of both the laser fluence and the number of laser shots.

Opto-Electrical Study of Sol-Gel Derived Antimony Doped Tin Oxide Films on Glass

  • De, Arijit
    • Transactions on Electrical and Electronic Materials
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    • 제16권1호
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    • pp.5-9
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    • 2015
  • Optical and electrical properties were studied for Antimony doped tin oxide thin films from precursors containing 10, 30, 50, and 70 atom% of Sb deposited on bare sodalime silica, barrier layer coated sodalime silica, and pure silica glass substrates by sol-gel spinning technique. The direct band gaps were found to vary from 3.13~4.12 eV when measured in the hv range of 2.5~5.0 eV, and varied from 4.22~5.08 eV when measured in the range of 4.0~7.0 eV. Indirect band gap values were in the range of 2.35~3.11 eV. Blue shift of band gap with respect to bulk band gap and Moss-Burstein shift were observed. Physical thickness of the films decreased with the increase in % Sb. Resistivity of the films deposited on SLS substrate was in the order of $10^{-2}$ ohm cm. Sheet resistance of the films deposited on barrier layer coated soda lime silica glass substrate was found to be relatively less.

a-Si 태양전지용(sodalime glass-$SiO_2$-$SnO_2$ : F) 기판의 특성 (Properties of (SLG-$SiO_2$-$SnO_2$ : F) Substrate for a-Si Solar Cells)

  • 윤경훈;송진수;한민구
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1990년도 하계학술대회 논문집
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    • pp.191-194
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    • 1990
  • A $SnO_2$: F/$SiO_2$ duble layer on the sodalime glass is described for developing a low-cost substrate of a-Si solar cells. Dipping and Pyrosol method, have been used for thin film deposition, and electrical and optical properties have been analysed. Finally, p-i-n a-Si solar cells have been fabricated on this substrate by plasma CVD and their average efficiency is 4% approximately.

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Field Emission Display의 고진공 실장에 관한 연구 (Study on Vacuum Packaging of Field Emission Display)

  • 이덕중;주병권;장진;오명환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.103-106
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    • 1999
  • In this paper, we suggest the FED packaging technology that have 4mm thickness, using sodalime glass-to-sodalime glass electrostatic bonding. It based on conventional silicon-glass bonding. The silicon film was deposited an around the exhausting hole on FED backside panel. And then, the silicon film of panel was successfully bonded with capping(bare) glass in vacuum environment and the FED panel was vacuum-sealed. In this method, we could achieve more 153 times increased conductance and 200 times increased vacuum efficiency than conventional tube packaging method. The vacuum level in panel, by SRG test, was maintained about low 10$_{-4}$ Torr during above two months And, the light emission was observed to 0.7-inch tubeless packaged FED. Then anode current was 34 $\mu$ A. Emission stability was constantly measured for 10 days.

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이온강화법을 이용한 소다라임 글라스 강화에 관한 연구 (A study on the strengthening of Sodalime glass using ion exchange method)

  • 안해원;오재호;권수근;최성대
    • 한국기계가공학회지
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    • 제13권6호
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    • pp.145-151
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    • 2014
  • The glass used for mobile display windows is required to have high strength. Chemical strengthening by means of ion exchange is widely used glass. The depth of the layer and the compressed stress are affected by tempering temperature and time. The purpose of this study is to investigate the range of DOL and CS, which to less breakage during reliability tests such as the ball drop test, hole drop test, 3-point bending test, drop test, and tumble test with Soda-lime Glass.

이온교환 방법에 의한 유리도파로 특성 고찰 (The Discussion of Glass Waveguide formed by ton-exchange)

  • 박정일;김봉재;박태성;정흥배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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    • pp.130-132
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    • 1994
  • We fabricated Ag ion exchange glass waveguide. Generally, ion-exchange glass waveguide. are suitable for passive integrated optical components such as directional and star couplers. Its advantages include low loss, ease of fabrication, and low material cost. So, we faricated Ag ion-exchange glass waveguides in AgNO$_3$ melt solution from 2 mole %. And we used Sodalime glass as a substrate in the fabrication process. As the results, we observed multivalent ion-exchange in a typical sodalime glass. Diffusion coefficient and depth are predicted by actual experimental data of Stewart. The exchange rate in silver-ion-exchanged waveguides are compared to the exchange time of waveguide fabrication.

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