• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.167-168
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• 2002

In this study, the effects of oxide layer formed on the wear tracks of TiN coated silicon wafer on friction characteristics were investigated. Silicon wafer was used for the substrate of coated disk specimens, which were prepared by depositing TiN coating with $1\;{\mu}m$ in coating thickness. AISI 52100 steel balls were used for the counterpart. The tests were performed both in air for forming oxide layer on the wear track and in nitrogen to avoid oxidation. This paper reports characterization of the oxide layer effects on friction characteristics using X-ray diffraction (XRD). scanning electron microscopy (SEM) and friction force microscope (FFM).

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.67-68
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• 2002

The properties and mechanism of silicon protuberance and groove processing by diamond tip sliding using atomic force microscope (AFM) in atmosphere were studied. To control the height of protuberance and the depth of groove, the processed height and depth depended on load and diamond tip radius were evaluated. Nanoprotuberances and grooves were fabricated on a silicon surface by approximately 100-nm-radius diamond tip sliding using an atomic force microscope in atmosphere. To clarify the mechanical and chemical properties of these parts processed, changes in the protuberance and groove profiles due to additional diamond tip sliding and potassium hydroxide (KOH) solution etching were evaluated. Processed protuberances were negligibly removed, and processed grooves were easily removed by additional diamond tip sliding. The KOH solution selectively etched the unprocessed silicon area. while the protuberances, grooves and flat surfaces processed by diamond tip sliding were negligibly etched. Three-dimensional nanofabrication is performed in this study by utilizing these mechanic-chemically processed parts as protective etching mask for KOH solution etching.

• Journal of the Korean institute of surface engineering
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• v.17 no.2
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• pp.29-40
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• 1984

The structure of rapidly solidified Al-Si-based alloys and its relationship to subsequent anodic film growth in near neutral and acid solutions have been investigated. Solidification of the alloys proceeds via pre-dendritic nuclei, associated with rugosity of the casting surface, from which cellular-type growth, comprised of aluminium-rich material surrounded by silicon-containing material, emanates. Observation of ultramicrotomed sections of the alloys and their anodic films reveals the local oxidation of the silicon-rich phase and its incorporation into the anodic alumina film, formed in near neutral solutions. Such incorporation occurs but resultant isolation of the silicon-rich phase is not possible for anodizing in phosphoric acid, and a three-dimensional network of the oxidized silicon-containing phase, with continuing development of porous anodic alumina, is observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.2
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• pp.130-138
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• 2006

We have investigated pattern scaling down of silicon stamps through the oxidation technique, During oxidizing the silicon stamps, silicon dioxide that has 300 nm and 500 nm thickness was grown, and critical deformations were not observed in the patterns. There was positive effect to reduce size of patterns because vertical and horizontal patterns have different orientation. We achieved pattern reduction rate of $26\%$. In addition, the formation of polymer patterns had been investigated with varied temperature and pressure conditions to improve the filling characteristics of polymers during nanoimprint lithography when pattern sizes were few micrometers. In these varied conditions, polymers had been affected by free space compensation and elastic stress relaxation for filling the cavities. Based on the results, defect control which is an important issue in the nanoimprint lithography were facilitated.

• Journal of Integrative Natural Science
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• v.3 no.4
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• pp.210-214
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• 2010

Relationship between etch current and morphology and porosity of porous silicon (PS) has been investigated. The gravimetric method is applied to measured the porosity of PS. As the current density increase, the silicon dissolution rate increases, resulting in a higher porosity and etching rate. The result shows that linear dependence of PS porosity and etching rate as a function of current density. The morphology of porous silicon was investigated by using cold field emission scanning electron micrograph (FE-SEM). The size of pores formed during anodization is predominantly controlled by the current density, with an increase in the pore size corresponding to an increase in the current density.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.161-162
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• 2006

Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using $N_2O$ in Inductively Coupled Plasma Chemical Vapor Deposition (ICP-CVD) reported about Ellipsometric measurement, Capacitance-Voltage characterization and processing conditions.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1997.10a
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• pp.155-159
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• 1997

We investigated the effect of mechanical backside damage in Czochralski silicon wafer. The intensity of mechanical damage were evaluated by minority carrier recombination lifetime by a laser excitation/microwave reflection photoconductance decay method, photo-acoustic displacement method, X-ray section topography, and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the photoacoustic displacement values are also increased proportionally.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.541-546
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• 1990

The current conduction and dielectric breakdown properties of oxide grown on phosphorous-doped polysilicon have been investigated by means of the ramped I-V measurements. The effective barrier heights of polyoxide grown by different silicon deposition and oxidation conditions were calculated from the Fowler-Nordheim tunneling characteristic. The average critical fields were also obtained for each film. From the results, the high temperature oxided polyoxide grown on amorphous silicon film shows superior electrical characteristics comparing to the other films.

• Proceedings of the Optical Society of Korea Conference
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• 2003.02a
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• pp.172-173
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• 2003

SOI (Silicon on insulator) 웨이퍼를 이용하여 제작된 전자소자는 고온에서 동작이 안정될 뿐만 아니라 초고속 동작이 가능하고, 사용 소비전력이 낮고, 단위 소자의 집적 효율이 우수해 활발한 연구가 이루어지고 있다. 최근에 초고속 광소자와 단위 광소자들의 집적을 위해 Si 이외의 GaAs, InP, SIC 등의 반도체 박막을 절연층 위에 만드는 연구가 많이 진행되고 있다 따라서 초기에 절연체 위에 실리콘 박막을 형성하는 Silicon on insulator (SOI) 기술은 다양한 종류의 반도체 박막을 절연체 위에 형성하는 Semiconductor on insulator로 SOI의 의미가 확장되고 있다. (중략)

• Journal of the Korean institute of surface engineering
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• v.33 no.5
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• pp.381-386
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• 2000

It was found that colloidal silica sprayed to the galvanized steel sheet apparently made the molten zinc layer solidified to be the randomly oriented fine grains. Its spraying effect was also little affected by steel temperature that had been considered as one of the major operating factors in this process. From the results of surface analysis, it is considered that aluminum dissolved in coating layer reduces silica to silicon by the oxidation-reduction reaction, and that the reduced silicon acts as a more effective nucleus in solidification reaction than phosphate salt, siica and alumina.