Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2006.06a
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- Pages.161-162
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- 2006
Study on the ultra thin film of silicon oxyinitride deposited by plasma - assisted $N_2O$ oxidation in ICP-CVD reactor
ICP-CVD 반응기 내에서 $N_2O$ 플라즈마 산화법을 이용하여 증착된 ultra thin silicon oxynitride films 에 관한 연구
- Hwang, Sung-Hyun (School of Information and Communication Engineering, Sungkyunkwan University) ;
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Jung, Sung-Wook
(School of Information and Communication Engineering, Sungkyunkwan University) ;
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Yi, J.
(School of Information and Communication Engineering, Sungkyunkwan University)
- Published : 2006.06.22
Abstract
Scaling rules for TFT application devices have led to the necessity of ultra thin dielectric films and high-k dielectric layers. In this paper, The advantages of high concentration of nitrogen in silicon oxide layer deposited by using