Proceedings of the Korea Association of Crystal Growth Conference (한국결정성장학회:학술대회논문집)
- 1997.10a
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- Pages.155-159
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- 1997
Evaluation of Mechanical Backside Damage of Silicon Wafer by Minority Carrier Recombination Lifetime and Photo-Acoustic Displacement Method
- Park, Chi-Young (Department of Inorganic Mat. Engineering, Kyungpook National University) ;
- Cho, Sang-Hee (Department of Inorganic Mat. Engineering, Kyungpook National University)
- Published : 1997.10.01
Abstract
We investigated the effect of mechanical backside damage in Czochralski silicon wafer. The intensity of mechanical damage were evaluated by minority carrier recombination lifetime by a laser excitation/microwave reflection photoconductance decay method, photo-acoustic displacement method, X-ray section topography, and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the photoacoustic displacement values are also increased proportionally.
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