• Proceedings of the Korean Geotechical Society Conference
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• 2002.10a
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• pp.569-576
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• 2002

Recently, the hydraulic fill method is commonly used in many reclamation projects due to lack of fill materials. The method of hydraulic fill in reclamation is executed by transporting the mixture of water-soil particles into a reclaimed land through dredging pipes, then the dredged soil particles settle down in the water or flow over an out flow weir with the water. In the present study, to compare the soil and sand-mat mixed method with sand-air jet method for shallow improvement of hydraulic fills at southern seashore, the model tests were performed. Through the model test results, the behavior of surface as disturbance of desiccation crust is analyzed.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.77-77
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• 2006

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.421-424
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• 2004

As the deep sub-micron devices are recently integrated high package density, novel process method for sub $0.1{\mu}m$ devices is required to get the superior thin gate oxide characteristics and reliability. However, few have reported on the electrical quality and reliability on the thin gate oxide. In this paper I will recommand a novel shallow trench isolation structure for thin gate oxide $30{\AA}$ of deep sub-micron devices. Different from using normal LOCOS technology, novel shallow trench isolation have a unique 'inverse narrow channel effects' when the channel width of the devices is scaled down shallow trench isolation has less encroachment into the active device area. Based on the research, I could confirm the successful fabrication of shallow trench isolation(STI) structure by the SEM, in addition to thermally stable silicide process was achiever. I also obtained the decrease threshold voltage value of the channel edge and the contact resistance of $13.2[\Omega/cont.]$ at $0.3{\times}0.3{\mu}m^2$. The reliability was measured from dielectric breakdown time, shallow trench isolation structure had tile stable value of $25[%]{\sim}90[%]$ more than 55[sec].

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• Transactions of Materials Processing
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• v.14 no.4 s.76
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• pp.392-398
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• 2005

The deterioration of dimensional accuracy, caused by springback, is one of problems to always occur In sheet metal forming processes. As the demand for lighter and stronger metals increases, the development of improved forming processes settling the springback problem becomes more important. In this work, asymmetric springback phenomena are investigated, which occur in the shallow-drawing process with the anisotropic sheet metal and axisymmetric tools. The improvement possibility of dimensional accuracies, mainly, flatness, was examined by applying segmented blank holding forces as a method for springback control.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.260-264
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• 2010

In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

• Journal of Biosystems Engineering
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• v.25 no.2
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• pp.79-88
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• 2000

Effects on tractive performance of design parameters of cage wheel as a traction aid to driving tires of tractor in wet paddy field were investigated experimentally. an experimental cage wheel was designed so that the design parameters such as wheel diameter, wheel width, lug pitch and lug angle could be varied during traction test, The traction test was conducted in two different types of wet paddy field ; shallow and deep harpan fields . Experimental results showed that tractive performance is affected by both soil conditions and the design parameters. A considerable improvement on the tractive performance was obtained by using a cage wheel with 45$^{\circ}$ lug angle in shallow hardpan and smaller lug pitch in deep hardpan. The diameter of cage wheel was mostly influential to the tractive performance both in shallow and deep hardpans.

• Journal of the Korean Geotechnical Society
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• v.25 no.7
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• pp.11-21
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• 2009

This paper presents a new high-performance supporting system of the shallow tunnel. In order to perform this research the mechanism of new supporting system is suggested and compared with the conventional existing supporting system. It is found that the new supporting system as pre-support system has several advantages such as improvement of ground before tunnel excavation and increment of capacity of the tunnel support. The construction procedures of this supporting system are also reviewed. In addition, the numerical simulation is carried out to evaluate the new supporting system. It is found that the new high-performance supporting system is very applicable in shallow depth tunnel such as portal area, tunnel in soil and weak zone, and so on.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.9
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• pp.729-734
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• 2000

Recently, Very Large Scale Integrated (VLSI) circuit & deep-submicron bulk Complementary Metal Oxide Semiconductor(CMOS) devices require gate electrode materials such as metal-silicide, Titanium-silicide for gate oxides. Many previous authors have researched the improvement sub-micron gate oxide quality. However, few have reported on the electrical quality and reliability on the ultra thin gate oxide. In this paper, at first, I recommand a novel shallow trench isolation structure to suppress the corner metal-oxide semiconductor field-effect transistor(MOSFET) inherent to shallow trench isolation for sub 0.1${\mu}{\textrm}{m}$ gate oxide. Different from using normal LOCOS technology deep-submicron CMOS devices using novel Shallow Trench Isolation(STI) technology have a unique"inverse narrow-channel effects"-when the channel width of the devices is scaled down, their threshold voltage is shrunk instead of increased as for the contribution of the channel edge current to the total channel current as the channel width is reduced. Secondly, Titanium silicide process clarified that fluorine contamination caused by the gate sidewall etching inhibits the silicidation reaction and accelerates agglomeration. To overcome these problems, a novel Two-step Deposited silicide(TDS) process has been developed. The key point of this process is the deposition and subsequent removal of titanium before silicidation. Based on the research, It is found that novel STI structure by the SEM, in addition to thermally stable silicide process was achieved. We also obtained the decrease threshold voltage value of the channel edge. resulting in the better improvement of the narrow channel effect. low sheet resistance and stress, and high threshold voltage. Besides, sheet resistance and stress value, rms(root mean square) by AFM were observed. On the electrical characteristics, low leakage current and trap density at the Si/SiO$_2$were confirmed by the high threshold voltage sub 0.1${\mu}{\textrm}{m}$ gate oxide.

• Journal of Korean Society of Forest Science
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• v.102 no.3
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• pp.463-466
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• 2013

We examined relationship between rainfall and triggering of shallow landslides in South Korea, based on hourly rainfall data for 478 shallow landslides during 1963-2012. Rainfall intensity(I) and duration(D) relationship was analyzed to obtain the I-D threshold for the initiation of a shallow landslide using the quantile regression analysis. The I-D threshold equation from in this study is: $I=9.64D^{-0.27}$($4{\leq}D{\leq}76$), where I and D are expressed in millimeters per hour and hours, respectively. In addition, rainfall criteria were proposed to predict the potential to cause landslides, based on values of I-D and cumulative rainfall derived from quantile regression analysis. Our findings may provide essential data and important evidences for the improvement of landslide warning and evacuation system.