JSTS:Journal of Semiconductor Technology and Science

The Institute of Electronics and Information Engineers (대한전자공학회)
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Improvement of Thermal Stability of Ni-Silicide Using Vacuum Annealing on Boron Cluster Implanted Ultra Shallow Source/Drain for Nano-Scale CMOSFETs

  • Received : 2010.08.26
  • Published : 2010.12.31
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Abstract

In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

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References

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