• Title/Summary/Keyword: semiconductor gas

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A STUDY OF DISCHARGE VOLTAGE IN PLANER PLASMA SYSTEM (평면형 PLASMA 시스템에서의 방전 전압에 관한 연구)

  • Kim, Jong-Sik;Kang, Bong-Ku;Kwon, O-Dae
    • Proceedings of the KIEE Conference
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    • 1989.07a
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    • pp.426-428
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    • 1989
  • As a first phase of plasma study intended for semiconductor processing research, we have studied the discharge phenomena. In particular, we have obtained a specific formula for the breakdown voltage as a function of the neutral state pressure of reactive gases. Our experimental results with H2,O2,Ar,CF4 seem ro verify this formula. In addition we find the voltage levels for various gases in the descending order of CF4>O2=Ar>H2 in high pressure region, while H2>CF4>O2>Ar in low pressure region. When H2 and CF4 were mixed, we observe the overall voltage dominated by the gas with lower breakdown volotage.

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Characteristic of ZnO Thin Film Grown on Plastic Substrates for the Application of Transparent Electronic Devices (투명 전자 소자로의 응용을 위해 플라스틱 기판에 성장시킨 ZnO 특성)

  • Lee, Jun-Pyo;Yoon, Yung-Sup;Kang, Seong-Jun
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.503-504
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    • 2008
  • ZnO thin films were deposited on glass and plastic substrates at different $Ar/O_2$ gas flow ratio in RF magnetron sputtering system. To investigate structural and optical properties of ZnO thin films, X-ray Diffactometer and UV-Vis Spectrometer were performed, respectively. The obtained films showed a preferred orientation the c-axis perpendicular to the substrate and transmittance above 80 % in visible range.

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Effect on the Sensitivity of a Hydrogen Sensor by Pd Electrode Patterns at High Temperature (고온에서 Pd 전극의 형태가 수소 센서의 감도에 미치는 영향)

  • Kim, Seong-Jeen
    • Journal of IKEEE
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    • v.22 no.2
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    • pp.356-361
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    • 2018
  • We investigated a hydrogen gas sensor which is available in a high temperature atmosphere. The hydrogen sensors were fabricated into a metal-oxide-semiconductor (MOS) structure made of $Pd/Ta_2O_5/SiC$, and the thin tantalum oxide ($Ta_2O_5$) layer was fabricated by rapid thermal oxidation (RTO). In the experiment, we made three types of sensors with different palladium (Pd) patterns to evaluate the effect of Pd electrode on response characteristics. As the result, the response characteristics in capacitance were improved further when the filled area of the Pd electrode became larger.

Combustibility Improving Effect of Organometallic Salt for Fuel Oil (燃料油 燃燒에 미치는 有機金屬鹽의 助燃效果)

  • Yong Shik Kang
    • Journal of the Korean Chemical Society
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    • v.15 no.6
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    • pp.330-347
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    • 1971
  • Catalytic effects of metallic salts on the combustion of diesel fuel oil have been studied. In the case of organometallic salt, the active species are the metallic oxides resulted from combustion of the salts. The oxides act only on the residual solid carbon produced from the fuel oil combustion. The catalytic activity can be explained with the semiconductor theory just as in the case of the gas phase reaction. The chemical rate constant of the combustion of carbon, the soot from diesel fuel oil, is found to be $k_c=1.1{\times}10^4\;exp$ (-16,600/T) below $800^{\circ}K$. By addition of metallic oxides, the rate constant increases remarkably. This work has substantiated the belief that the effect of the metallic salts on the fuel oil combustion can conveniently be studied by checking directly the effect of the corresponding metallic oxide on the soot carbon.

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Characterizations of nitrided gate oxides by fowler-nordheim tunneling electron injection (Fowler-nordheim 터널링 전자주입에 의한 질화 게이트 산화막의 특성 분석)

  • 장성수;문성근;노관종;노용한;이칠기
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.7
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    • pp.79-87
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    • 1998
  • Nitrided oxides which have been investigated as alternative gate oxide for metal-oxide-semiconductor field effect devices were grown by two-step process using N$_{2}$O gas, and were chaacterized via a fowler-nordheim tunneling(FNT) electron injection technique. Electrical characteristics of nitrided gate oxides were superior to that of control oxides.Further, the FNT electron injection into the nitrided gate oxides reveals that gate oxides degrade more both if electrons were foreced to inject from the gate metal and if thicker nitrided gate oxides were used in the thickness range of 90~130.angs.. Models are suggested to explain these phenomena.

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CFD flow analysis of 150mm shower heads depending on plasma pitch (플라즈마 피치에 따른 150mm 샤워헤드에 대한 CFD 유동해석)

  • Kim, Dong-Hwa;Kim, Ho-Bum;Cho, Chong-Du;Jeong, Dea-Kyo
    • Proceedings of the KSME Conference
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    • 2008.11a
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    • pp.585-589
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    • 2008
  • This study is performed to analyze the fluid flow about 150mm shower heads of semiconductor device. Under the air pressure, the ideal gas of moving fluid is injected as 5m/s velocity into inlet of shower heads and the flow distribution in shower heads is measured according to pitch of plasma distribution device. As results, the maximum and minimum value of fluid velocity are investigated with their position. The velocity values at outlet are also studied. From two experiment using the plasma distribution device, the results of CFD are compared with the experimental results. That results shows stable flow of fluid in that case of corrected design from CFD.

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Novel Driving Technology for PDP with Multi-Level Sustainer Circuit

  • Roh, Chung-Wook;Kim, Hye-Jeong;Lee, Sang-Hoon;Kim, Young-Sun;Jung, Tae-Hong;Hong, Chang-Wan
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.876-879
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    • 2002
  • A novel driving technology of PDP, which enables to decrease the sustain voltage of conventional technology by half without lowering the gas discharging voltage. This technology, realizable without much increased cost of the semiconductor devices, gives a significant improvement in the power efficiency, essential for the design of a drive circuit for PDP. A comparative analysis and experimental results are presented to show the validity of the proposed driving technology.

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Assessment of material analysis for Halogen free flame retardant concentric neutral type Power cable (난연성 동심중성선 전력 케이블의 재료에 대한 평가 기술)

  • Soh, Jin-Joong;Shim, Dae-Sub
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1460-1462
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    • 2002
  • The test methods on materials of electrical power cable are used in accordance with 25 specifications of IEC, ASTM, ICEA, KS and KEPCO Spec. The validation of test methods were checked and stablished by solving the problems occurred during the test. These tests are flammability, degree of acidity of gases, amount of halogen acid gas, smoke density, oxygen index, amount of ion in semiconductor, void, amber, contaminant and water tree, crosslinked density. Then the performance of power cable made by A, B, C and D company were evaluated and compared.

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A study of acoustic and vibration character of High volume dry vacuum pumps (대용량 건식 진공펌프의 음향.진동 특성 연구)

  • Shin, Yun-Sang;Cheung, Wan-Sup;Hong, Dong-Pyo;Lim, Jong-Yeon;Kim, Se-Hwan
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2006.05a
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    • pp.1313-1316
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    • 2006
  • Demands of high volume dry vacuum pumps on the domestic semiconductor and LCD industries are rapidly increasing as the size of wafers and LCD is increasing. This study introduces a new experimental setup for testing the reliability of vacuum pumps. The test system was designed to measure the acoustic pressure and mechanical vibration levels simultaneously. It is shown that the test system enables the analysis and evaluation of the performance of dry pumps under the different gas-load conditions. Detailed experimental result are shown to enable us to examine the characteristics and performance of dry pumps.

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Fault Detection with OES and Impedance at Capacitive Coupled Plasmas

  • Choe, Sang-Hyeok;Jang, Hae-Gyu;Chae, Hui-Yeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.499-499
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    • 2012
  • This study was evaluated on etcher of capacitive coupled plasmas with OES (Optical Emission Spectroscopy) and impedance by VI probe that are widely used for process control and monitoring at semiconductor industry. The experiment was operated at conventional Ar and C4F8 plasma with variable change such as pressure and addition of gas (Atmospheric Leak: N2 and O2), RF, pressure, that are highly possible to impact wafer yield during wafer process, in order to observe OES and VI Probe signals. The sensitivity change on OES and Impedance by Vi probe was analyzed by statistical method to determine healthy of process. The main goal of this study is to understand unwanted tool performance to eventually improve productive capability. It is important for process engineers to actively adjust tool parameter before any serious problem occurs.

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