Journal of IKEEE (전기전자학회논문지)

Institute of Korean Electrical and Electronics Engineers (한국전기전자학회)
권호 표지
DOI QR코드

DOI QR Code

Effect on the Sensitivity of a Hydrogen Sensor by Pd Electrode Patterns at High Temperature

고온에서 Pd 전극의 형태가 수소 센서의 감도에 미치는 영향

  • Received : 2018.06.10
  • Accepted : 2018.06.19
  • Published : 2018.06.30
Download PDF
⟨ Previous Next ⟩

Abstract

We investigated a hydrogen gas sensor which is available in a high temperature atmosphere. The hydrogen sensors were fabricated into a metal-oxide-semiconductor (MOS) structure made of $Pd/Ta_2O_5/SiC$, and the thin tantalum oxide ($Ta_2O_5$) layer was fabricated by rapid thermal oxidation (RTO). In the experiment, we made three types of sensors with different palladium (Pd) patterns to evaluate the effect of Pd electrode on response characteristics. As the result, the response characteristics in capacitance were improved further when the filled area of the Pd electrode became larger.

고온에서 이용 가능한 수소 센서에 관해 연구하였다. 센서는 $Pd/Ta_2O_5/SiC$으로 구성된 MOS 구조로 제작되었으며, $Ta_2O_5$ 박막은 급속 열 산화법(RTO)법으로 형성하였다. 본 연구에서는 3가지 다른 패턴의 팔라듐(Pd) 전극으로 만든 센서를 제작하여, Pd 전극의 형태가 응답 특성에 미치는 영향을 고찰하였다. 그 결과, 센서는 Pd 전극의 채워진 면적이 클수록, 정전용량의 응답특성이 개선됨을 확인하였다.

Keywords

References

  1. C. Loa, S. W. Tan, C. Y. Wei, J. H. Tsai, and W. S. Lour, "Sensing properties of resistive-type hydrogen sensors with a $Pd-SiO_2$ thin-film mixture," Int. J . Hydrog. Energy, vol. 38, pp. 313-318, 2013.DOI:10.1016/j.ijhydene.2012.10.051
  2. C. Lu and Z. Chen, "High-temperature resistive hydrogen sensor based on thin nanoporous rutile $TiO_2$ film on anodic aluminum oxide," Sens. Actuator B., vol. 140, pp. 109-115, 2009.DOI:10.1016/j.snb.2009.04.004
  3. K. Shimizu, I Chinzei, H. Nishiyama, S. Kakimoto, S. Sugaya, H. Yokoi, and A. Satsuma, "Hydrogen sensor based on $WO_3$ subnano-clusters and Pt co-loaded on $ZrO_2$," Sens. Actuators B., vol. 134, pp. 2618-2624, 2008.DOI:10.1016/j.snb.2008.06.004
  4. W. M. Tang, C. H. Leung, and P. T. Lai. "Effect of $N_2$-annealing conditions on the sensing properties of $Pt/HfO_2/SiC$ Schottky- diode hydrogen sensor," Thin Solid Films, vol. 519, pp. 505-511, 2010.DOI:10.1016/j.tsf.2010.08.090
  5. S. J. Joo, J. H. Choi, S. J. Kim, and S. C. Kim, "$Pd/Ta_2O_5/SiC$ Schottky-diode hydrogen sensors formed by using rapid thermal oxidation of a Ta thin films," J. Korean Phys. Soc., vol. 63, pp. 1794-1798, 2013.DOI:10.3938/jkps.63.1794