• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1229_1230
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• 2009

$SiO_2$ 패시베이션 층에 As+ 이온을 주입한 1.2 kV급 AlGaN/GaN 쇼트키 장벽 다이오드( Schottky Barrier Diode, SBD )를 제작하였다. 주입된 As+ 이온들은 역방향 바이어스에서 공핍 영역의 곡률을 변화 시켰고, 이로 인해 항복 전압이 증가하고 누설 전류가 감소하였다. 제안된 소자의 항복전압이 1204 V 이었고, 기존 소자의 항복전압은 604 V 이었다. 캐소드 전압이 100 V일 때 제안된 소자의 누설전류는 21.2 nA/mm 이었고, 같은 조건에서 제안된 소자는 $80.3{\mu}A/mm$ 이었다. 주입된 As+ 양이온은 이차원 전자 가스( Two-Dimensional Electron Gas, 2DEG )에 전자를 유도했고, 채널의 농도가 미세하게 증가하였다. 따라서 순방향 전류가 증가하였다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.344-349
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• 2006

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. We aimed to systematically investigate the dependence of SiC epilayer quality and growth rate during the sublimation growth using the CST method on various process parameters such as the growth temperature and working pressure. The etched surface of a SiC epitaxial layer grown with low growth rate $(30{\mu}m/h)$ exhibited low etch pit density (EPD) of ${\sim}2000/cm^2$ and a low micropipe density (MPD) of $2/cm^2$. The etched surface of a SiC epitaxial layer grown with high growth rate (above $100{\mu}m/h$) contained a high EPD of ${\sim}3500/cm^2$ and a high MPD of ${\sim}500/cm^2$, which indicates that high growth rate aids the formation of dislocations and micropipes in the epitaxial layer. We also investigated the Schottky barrier diode (SBD) characteristics including a carrier density and depletion layer for Ni/SiC structure and finally proposed a MESFET device fabricated by using selective epilayer process.

• Electronics and Telecommunications Trends
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• v.35 no.4
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• pp.53-64
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• 2020

The terahertz (THz) region lies in between the millimeter and infrared spectral bands. A THz wave has the characteristics of non-invasiveness and non-ionization due to low photon energies, while having high penetrability in dielectrics. In addition, since the resonance frequencies of various molecules are included in the THz band, research on the application of spectral analysis and non-destructive testing has been widely studied. Towards this end, the research and development of THz detectors has become increasingly important in order to assess their applications in different areas such as astronomy, security, industrial non-destructive evaluations, biological applications, and wireless communications. In this report, we summarize the operating principles, characteristics, and utilization of various broadband technologies in THz detection devices. Further, we introduce the development status of our Schottky barrier diode technology as one of the broadband THz detectors that can be easily adopted as direct detectors in many fields of applications.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.2 no.2 s.3
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• pp.97-101
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• 2003

A MMIC (monolithic microwave integrated circuit) mixer chip using the Schottky diode of an InGahs/CaAs p-HEMT process has been developed for the receiver down converter of Ku-band. A different approach to the MMIC mixer structure is applied for reducing the chip size by the exchange of ports between If and LO. This MMIC covers with RF (14.0 - 14.5 GHz) and If (12.252 - 12.752 GHz). According to the on-wafer measurement, the miniature (3.3X3.0 m) MMIC mixer demonstrates conversion loss below 9.8 dB, RF-to-IF isolation above 23 dB, LO-to-IF isolation above 38 dB, respectively.

• Korean Journal of Materials Research
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• v.8 no.9
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• pp.825-830
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• 1998

자화된 유도결합형 C4F8 플라즈마로 SiO2를 건식식각시 실리콘 표면에 발생하는 손상과 오염에 대하여 연구하였다. 오염의 분석을 위해서 XPS, SIMS, TEM을 사용하였으며, 손상정도를 측정하기 위해서 HRTEM과 Schottky-diode 구성을 통한 I-V특성 측정을 사용하였다. 유도 결합형 C4F8 플라스마에 0에서 18Gauss까지의 자장이 가해짐에 따라서 실리콘 표면에 생기는 잔류막의 두께가 SiO2식각속도와 선택비의 증가와 함께 증가하였으며, XPS를 통하여 그 조성이 fluorine-rich에서 carbon-rich 한 상태로 변화함을 알 수 있었다. 자장을 가하지 않는 상태에서는 표면에서 $40\AA$부근까지 고밀도의 손상층이 관찰되었으나, 자장을 가함에 따라서 노출된 손상층의 깊이는 깊어지나 그 밀도는 줄어들음을 HRTEM을 통하여 관찰 할 수 있었다. Schottky-diode를 통한 I-V특성곡선의 분석으로 자장이 증가함에 따라서 전기적인 손상이 감소함을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.270-274
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• 2003

네트워크상태의 탄소나노튜브 나노선과 바나듐 옥사이드 나노선의 전압-전류 특성을 측정하고 옴성 전압전류특성과 함께 정류 다이오드 특성을 관측하였다 정류특성을 Schottky diode 관점에서 분석하였고 나노선을 이용한 다이오드의 이상지수가 10을 초과하는 큰 값을 가짐을 알았다. 2단자 전극상태에서 전류잡음 1/f 잡음형태가 관측되었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.348-349
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• 2007

This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, Hz, and Ar gas at $1180^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84 V, over 140 V, 61nm, and $2.7\;{\times}\;10^{19}\;cm^3$, respectively. The p-n junction diodes fabricated on the poly 3C-SiC/Si(p-type) were obtained like characteristics of single 3C-SiC p-n junction diodes. Therefore, poly 3C-SiC thin film diodes will be suitable microsensors in conjunction with Si fabrication technology.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.492-499
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• 2013

We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (${\Phi}_{bo}$) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The ${\Phi}_{bo}$ and the series resistance ($R_S$) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density ($N_{SS}$) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density $N_{SS}$ as determined by Terman's method is found to be $2.14{\times}10^{12}\;cm^{-2}\;eV^{-1}$ for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.

• Journal of IKEEE
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• v.24 no.2
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• pp.604-609
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• 2020

We investigated the influence of rapid thermal annealing on aluminum nitride (AlN) thin film Schottky barrier diodes (SBDs) manufactured structures deposited on a 4H-silicon carbide (SiC) wafer using radio frequency sputtering. The Ni/AlN/4H-SiC devices annealed at 400℃ exhibited Schottky barrier diode (SBDs) properties with an on/off current ratio that was approximately 10 times higher than that of the as-deposited device structures and the devices annealed at 600℃ as measured at room temperature. Auger electron spectroscopy (AES) measurements revealed that atomic oxygen concentrations in the annealed AlN devices at 400℃, is ascribed to the improvement in on/off ratio and the reduction of on-resistance. Additionally, we investigated the electrical characteristics of the AlN/SiC SBD structures depending on the frequency variation of sound waves.

• Journal of IKEEE
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• v.23 no.1
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• pp.193-199
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• 2019

In this study, we have proposed a floating metal guard ring structure based on TCAD simulation in order to enhance the breakdown voltage characteristics of gallium oxide ($Ga_2O_3$) vertical high voltage switching Schottky barrier diode. Unlike conventional guard ring structures, the floating metal guard rings do not require an ion implantation process. The locally enhanced high electric field at the anode corner was successfully suppressed by the metal guard rings, resulting in breakdown voltage enhancement. The number of guard rings and their width and spacing were varied for structural optimization during which the current-voltage characteristics and internal electric field and potential distributions were carefully investigated. For an n-type drift layer with a doping concentration of $5{\times}10^{16}cm^{-3}$ and a thickness of $5{\mu}m$, the optimum guard ring structure had 5 guard rings with an individual ring width of $1.5{\mu}m$ and a spacing of $0.2{\mu}m$ between rings. The breakdown voltage was increased from 940 V to 2000 V without degradation of on-resistance by employing the optimum guard ring structure. The proposed floating metal guard ring structure can improve the device performance without requiring an additional fabrication step.