References
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, H. Kiyoku, and Y. Sugimoto, "InGaN-based multi-quantum-well structure laser diodes," Jpn. J. Appl. Phys., vol. 35, pp. L74-L76, 1996. https://doi.org/10.1143/JJAP.35.L74
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamda, T. Matsushita, H. Kiyoku, Y. Sugimoto, T. Kozaki, H. Umemoto, M. Sano, and K. Chocho, "Continuous-wave operation of InGaN/GaN/ AlGaN-based laser diodes grown on GaN substrates," Appl. Phys. Lett., vol. 82, no. 16, pp. 2014-2016, 2003. https://doi.org/10.1063/1.1564638
- J. Bardeen, " Surface states and rectification at a metal semiconductor contact," Phys. Rev., vol. 71, no. 10, pp. 717-727, 1947. https://doi.org/10.1103/PhysRev.71.717
- S. M. Sze, "Physics of Semiconductor Devices," Wiley & Son, 1981.
- E. H. Rhoderick, and R. H. Williams, "Metal- Semiconductor Contacts," Clarendon Press, Oxford, 1988.
- M. Drechsler, D. M. Hofmann, B. K. Meyer, T. Detchprohm, H. Amano, and I. Akasaki, "Determination of the conduction band electron effective mass in hexagonal GaN," Jpn.J. Appl. Phys., vol. 34, no. 9B, pp. L1178-L1179, 1995.
- H. C. Card, and E. H. Rhoderick, "Studies of tunnel MOS diodes I. interface effect in silicon Schottky diodes," J. Phys. D: Appl. Phys., vol. 4, no. 10, pp. 1589-1601, 1971. https://doi.org/10.1088/0022-3727/4/10/319
- S. K. Cheung, and N. W. Cheung, "Extraction of Schottky diode parameters from forward currentvoltage characteristics," Appl. Phys. Lett., vol. 49, no. 2, pp. 85-87, 1986. https://doi.org/10.1063/1.97359
- H. Norde, "A modified forward I-V plot for Schottky diode with high series resistance," J. Appl. Phys., vol. 50, no. 7, pp. 5052-5053, 1979. https://doi.org/10.1063/1.325607
- Zs. J. Horvath, I.Gyuro, M.N. Sallay, and P. Tutto, "Near-interface concentration reduction in n-type Au/Cr GaAs Schottky contacts," Vacuum, vol. 40, no. 1-2. pp. 201-203, 1990. https://doi.org/10.1016/0042-207X(90)90156-S
- B.G. Streetman, and S.K. Banerjee, "Solid state electronic devices," Prentice-Hall, Englewood, NJ, 2006.
- A. Geozberger, V. Heine, and E.H. Nicollian, "Surfaces states in silicon from charges in the oxide coating," Appl. Phys. Lett., vol. 12, no. 3, pp. 95-98,1968. https://doi.org/10.1063/1.1651913
-
H. Kanbur, S. Altindal, and A. Tataroglu, "The effect of interface states, excess capacitance and series resistance in the Al/
$SiO_2$ /p-Si Schottky diodes," Appl. Surf. Sci., vol. 252, no. 5, pp. 1732- 1738, 2005. https://doi.org/10.1016/j.apsusc.2005.03.122 - J. Kolnik, and M. Ozvold, "The influence of insertion surface layers on the evaluation of the interface state energy distribution from Schottky diode I-V characteristics," Phys. Stat. Sol. (a),vol. 122, no.2, pp. 583-588, 1990. https://doi.org/10.1002/pssa.2211220219
- S. J. Fonash, "A reevaluation of the meaning of capacitance plots for Schottky-barrier-type diodes," J. Appl. Phys., vol. 54, no.4, pp.1966-1975, 1983. https://doi.org/10.1063/1.332251
- H. H. Tseng, and C. Y. Wu, "A simple technique for measuring the interface-state density of the Schottky barrier diodes using the current-voltage characteristics," J. Appl. Phys., vol. 61, no. 1, pp. 299-304, 1987. https://doi.org/10.1063/1.338820
- G. Gomila, and J. M. Rubi, "Relation for the non equilibrium population of the interface states: effects on the bias dependence of the ideality factor," J. Appl. Phys., vol. 81, no. 6, pp. 2674- 2681, 1997. https://doi.org/10.1063/1.364305
- G. Gomila, "Effects of interface states on the nonstationary transport properties of Schottky contacts and metal-insulator-semiconductor tunnel diodes," J. Phys. D: Appl. Phys., vol. 32, no. 1, pp. 64-71, 1999. https://doi.org/10.1088/0022-3727/32/1/011
- Zs. Horvath, "Evaluation of the interface state energy distribution from Schottky I-V characteristics," J. Appl. Phys., vol. 63, no. 3, pp. 976-978, 1988. https://doi.org/10.1063/1.340048
- A. Singh, K. C. Reinhardt, and W. A. Anderson, "InP tunnel metal-insulator-semiconductor devices irradiated with 1 MeV," J. Appl. Phys., vol. 68, no. 10, pp. 4788-4794, 1990. https://doi.org/10.1063/1.346135
- M. K. Hudait, and S. B. Krupanidhi, "Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates," Mater. Sci. Eng. B, vol. 87, no. 2, pp. 141-147, 2001. https://doi.org/10.1016/S0921-5107(01)00713-9
- L. M. Terman, "An investigation of surface states at a silicon at a silicon/silicon oxide interface employing metal-oxide-silicon diodes," Solid-State Electron., vol. 5, no. 5, pp. 285-299, 1962. https://doi.org/10.1016/0038-1101(62)90111-9
Cited by
- Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope vol.10, pp.3, 2015, https://doi.org/10.5370/JEET.2015.10.3.1131
- DC and RF Analysis of Geometrical Parameter Changes in the Current Aperture Vertical Electron Transistor vol.11, pp.6, 2016, https://doi.org/10.5370/JEET.2016.11.6.1763
- Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact vol.9, pp.13, 2017, https://doi.org/10.1039/C7NR00647K
- Surface morphological, electrical and transport properties of rapidly annealed double layers Ru/Cr Schottky structure on n-type InP vol.91, pp.7, 2017, https://doi.org/10.1007/s12648-017-0977-3
- F4-TCNQ concentration dependence of the current—voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode vol.23, pp.11, 2014, https://doi.org/10.1088/1674-1056/23/11/117306