• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 추계학술대회 초록집
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• pp.134-134
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• 2009

원자층 증착법을 이용하여 platinum group metal(Ru, Ir, Pt). metal nitride(TaN, TiN, AlN), 그리고 metal oxide($Al_2O_3$, $TiO_2$)을 증착하고, 미세구조와 공정 변수가 내산화성, 내부식성, 저항 및 온도저항계수에 미치는 영향을 연구하였다. proto-type의 전자저항막 제조를 통해 종래의 TaN 전자저항막에 비해 우수한 내부식성 및 내산화성을 가짐을 확인하였다.

• 전력전자학회논문지
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• 제24권6호
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• pp.459-462
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• 2019

This work presents methods for reducing overshoot voltages across the drain-source of silicon carbide (SiC) MOSFETs in grid-connected hybrid active neutral-point-clamped (ANPC) inverters. Compared with 3-level NPC-type inverter, the hybrid ANPC inverter can realize the high efficiency. However, SiC MOSFETs conduct its switching operation at high frequencies, which cause high overshoot voltages in such devices. These overshoot voltages should be reduced because they may damage switching devices and result in electromagnetic interference (EMI). Two major strategies are used to reduce the overshoot voltages, namely, adjusting the gate resistor and using a snubber capacitor. In this paper, advantages and disadvantages of these methods will be discussed. The effectiveness of these strategies is verified by experimental results.

• 한국전기전자재료학회논문지
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• 제30권9호
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• pp.566-571
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• 2017

A soft baking process was used to enhance the electrical characteristics of solution-processed indium-zincoxide (IZO) thin-film transistors (TFTs). We demonstrate a stable soft baking process using a hot plate in air to maintain the electrical stability and improve the electrical performance of IZO TFTs. These oxide transistors exhibited good electrical performance; a field-effect mobility of $7.9cm^2/Vs$, threshold voltage of 1.4 V, sub-threshold slope of 0.5 V/dec, and a current on/off ratio of $2.9{\times}10^7$ were measured. To investigate the static response of our solutionprocessed IZO TFTs, simple resistor load type inverters were fabricated by connecting a resistor (5 or $10M{\Omega}$). Our IZO TFTs, which were manufactured using the soft baking process at a baking temperature of $120^{\circ}C$, performed well at the operating voltage, and are therefore a good candidate for use in advanced logic circuits and transparent display backplanes.

• Journal of Advanced Marine Engineering and Technology
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• 제37권1호
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• pp.105-113
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• 2013

본 논문에서는 ${\pi}$형 다중결합선로와 RCR 삽입구조를 이용하여 양호한 절연특성을 가짐과 동시에, 종래에 비해 상당히 축소된 형태의 초소형 윌킨슨 전력분배기를 GaAs MMIC상에 구현하였다. 본 논문에서 제안한 RCR 삽입설계법에 의해 윌킨슨 전력분배기의 선로길이가 ${\lambda}$/46까지 축소되어도 중심주파수에서 -23 [dB]의 절연특성이 유지되었으며, -8 [dB]의 절연특성을 가지는 종래의 ${\pi}$형 다중결합선로 윌킨슨 전력분배기에 비해 절연특성이 개선되었다. 본 논문에서 제안한 윌킨슨 전력분배기의 면적은 0.304 [$mm^2$]로서 GaAs상에 동일한 조건으로 제작된 종래의 윌킨슨 전력분배기 면적의 12.1%밖에 되지 않는다. 상기 윌킨슨 전력분배기는 C/X 밴드에서 양호한 RF 특성을 나타내었다.

• Progress in Superconductivity
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• 제6권1호
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• pp.46-51
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• 2004

We fabricated a resistive type superconducting fault current limiter (SFCL) of 3-phase $6.6 kV_{rms}$ / rating, based on YBCO thin films grown on sapphire substrates with a diameter off inch. Each element of the SFCL was designed to have the rated voltage of $600 V_{rms}$ $/35A_{rms}$. The elements produced a single phase with 8${\times}$6 components connected in series and parallel. In addition, a NiCr shunt resistor of 23 $\Omega$ was connected in parallel to each of them for simultaneous quenches between the elements. Prior to investigating the performance of the 3 phase SFCL, we examined the quench characteristics for 8 elements connected in series. For all elements, simultaneous quenches and equal voltage distribution within 10% deviation from the average were obtained. Based on these results, performance of the SFCL for single line-to-ground faults was investigated. The SFCL successfully limited the fault current of $10 kA_{ rms}$ below 816 $A_{peak}$ within 0.12 msec right after the fault occurred. During the quench process, average temperature of all components did not exceed 250 K, and the SFCL was totally safe during the whole operation.

• 한국전기전자재료학회논문지
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• 제30권7호
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• pp.437-440
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• 2017

We report on amorphous thin-film transistors (TFTs) with indium zinc oxide (IZO) channel layers that were fabricated via a solution process. We prepared the IZO semiconductor solution with 0.1 M indium nitrate hydrate and 0.1 M zinc acetate dehydrate as precursor solutions. The solution- processed IZO TFTs showed good performance: a field-effect mobility of $7.29cm^2/Vs$, a threshold voltage of 4.66 V, a subthreshold slope of 0.48 V/dec, and a current on-to-off ratio of $1.62{\times}10^5$. To investigate the static response of our solution-processed IZO TFTs, simple resistor load-type inverters were fabricated by connecting a $2-M{\Omega}$ resistor. Our IZOTFTbased N-MOS inverter performed well at operating voltage, and therefore, isa good candidate for advanced logic circuits and display backplane.

• 제어로봇시스템학회논문지
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• 제12권6호
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• pp.594-599
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• 2006

In this paper an anthropomorphic robot hand called SKKU Hand IIl is presented, which has a miniaturized fingertip tactile sensor. The thumb is designed as one part of the palm and multiplies the mobility of the palm. The fingertip tactile sensor, based on polyvinylidene fluoride (PVDF) and pressure variable resistor ink, is physically flexible enough to be deformed into any three-dimensional geometry. In order to detect incipient slip, a PVDF strip is arranged along the direction normal to the surface of the finger of the robot hand. Also, a thin flexible sensor to sense the static force as well as the contact location is fabricated into an arrayed type using pressure variable resistor ink. The driving circuits and the tactile sensing systems for the SKKU Hand II are embedded in the hand. Each driving circuit communicates with others using CAN protocol. SKKU Hand II is manufactured and its feasibility is validated through preliminary experiments.

• 한국전기전자재료학회논문지
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• 제31권1호
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• pp.50-54
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• 2018

In this study, a femtosecond laser pre-annealing technology based on indium zinc oxide (IZO) thin-film transistors (TFTs) was investigated. We demonstrated a stable pre-annealing process to analyze the change in the surface structures of thin-films, and we improved the electrical performance. Furthermore, static and dynamic electrical characteristics of IZO TFTs with n-channel inverters were observed. To investigate the static and dynamic responses of our solution-processed IZO TFTs, simple resistor-load-type inverters were fabricated by connecting a $1-M{\Omega}$ resistor. The femtosecond laser pre-annealing process based on IZO TFTs showed good performance: a field-effect mobility of $3.75cm_2/Vs$, an $I_{on}/I_{off}$ ratio of $1.8{\times}10^5$, a threshold voltage of 1.13 V, and a subthreshold swing of 1.21 V/dec. Our IZO-TFT-based N-MOS inverter performed well at operating voltage, and therefore, is a good candidate for advanced logic circuits and display backplane.

• Smart Structures and Systems
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• 제18권3호
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• pp.449-470
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• 2016

Energy harvesting is an emerging technique that extracts energy from surrounding environments to power low-power devices. For example, it can potentially provide sustainable energy for wireless sensing networks (WSNs) or structural control systems in civil engineering applications. This paper presents a comprehensive study on harvesting energy from earthquake-induced structural vibrations, which is typically of low frequency, to power WSNs. A macroscale pendulum-type electromagnetic harvester (MPEH) is proposed, analyzed and experimentally validated. The presented predictive model describes output power dependence with mass, efficiency and the power spectral density of base acceleration, providing a simple tool to estimate harvested energy. A series of shaking table tests in which a single-storey steel frame model equipped with a MPEH has been carried out under earthquake excitations. Three types of energy harvesting circuits, namely, a resistor circuit, a standard energy harvesting circuit (SEHC) and a voltage-mode controlled buck-boost converter were used for comparative study. In ideal cases, i.e., resistor circuit cases, the maximum electric energy of 8.72 J was harvested with the efficiency of 35.3%. In practical cases, the maximum electric energy of 4.67 J was extracted via the buck-boost converter under the same conditions. The predictive model on output power and harvested energy has been validated by the test data.

• 한국전기전자재료학회논문지
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• 제32권3호
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• pp.219-222
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• 2019

In this study, we fabricated plate-type shunt resistors with thermal stability by parallelly connecting metal alloy plates with positive temperature coefficient of resistance (TCR) and carbon nanotube (CNT) plates with negative TCR. The metal alloy plates, which were prepared by alloying Cu and Mn with a composition of 91 wt% of Cu and 9 wt% of Mn, showed around $800ppm/^{\circ}C$ of TCR, and the CNT plates prepared from the CNT solution by using the vacuum filtration method showed around $-800ppm/^{\circ}C$ of TCR. The shunt resistor that was fabricated by stacking metal alloy plates and CNT plates in this work showed about $46.93ppm/^{\circ}C$ of TCR. Therefore, we conclude that a shunt resistor with low TCR can be realized by simply adjusting the TCR of the metal alloy only, because the TCR of the CNT plate has an identical value.