Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Improvement in Electrical Characteristics of Solution-Processed In-Zn-O Thin-Film Transistors Using a Soft Baking Process

Soft-Baking 처리를 통한 용액 공정형 In-Zn-O 박막 트랜지스터의 전기적 특성 향상

  • Kim, Han-Sang (College of Electrical and Computer Engineering, Chungbuk National University) ;
  • Kim, Sung-Jin (College of Electrical and Computer Engineering, Chungbuk National University)
  • 김한상 (충북대학교 전자정보대학) ;
  • 김성진 (충북대학교 전자정보대학)
  • Received : 2017.06.13
  • Accepted : 2017.07.28
  • Published : 2017.09.01
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Abstract

A soft baking process was used to enhance the electrical characteristics of solution-processed indium-zincoxide (IZO) thin-film transistors (TFTs). We demonstrate a stable soft baking process using a hot plate in air to maintain the electrical stability and improve the electrical performance of IZO TFTs. These oxide transistors exhibited good electrical performance; a field-effect mobility of $7.9cm^2/Vs$, threshold voltage of 1.4 V, sub-threshold slope of 0.5 V/dec, and a current on/off ratio of $2.9{\times}10^7$ were measured. To investigate the static response of our solutionprocessed IZO TFTs, simple resistor load type inverters were fabricated by connecting a resistor (5 or $10M{\Omega}$). Our IZO TFTs, which were manufactured using the soft baking process at a baking temperature of $120^{\circ}C$, performed well at the operating voltage, and are therefore a good candidate for use in advanced logic circuits and transparent display backplanes.

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