• Title/Summary/Keyword: reactive ion beam

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Surface energy change and hydrophilic formation of PE, PS and PTFE films modification by hydrogen ion assisted reaction

  • Jung Cho;Ki Hyun;Koh, Seok-Keun
    • Proceedings of the Korean Vacuum Society Conference
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    • 1999.07a
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    • pp.202-202
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    • 1999
  • The Polyethylene (PE), Polystyrene (PS) and Polytetrafluoroethylene (PTFE) surface modification was investigated by hydrogen io assisted reaction (H-IAR) in oxygen environment. The IAR is a kind of surface modification techniques using ion beam irradiation in reactive gas environment. The energy of hydrogen ion beam was fixed at 1keV, io dose was varied from 5$\times$1014 to 1$\times$1017 ions/$\textrm{cm}^2$, and amount of oxygen blowing gas was fixed 4ml/min. Wettability was measured by water contact angles measurement, and the surface functionality was analyzed by x-ray photoelectron spectroscopy. The contact angle of water on PE modified by argon ion beam only decrease from 95$^{\circ}$ to 52$^{\circ}$, and surface energy was not changed significantly. But, the contact angle using hydrogen ion beam with flowing 4ml/min oxygen stiffly decreased to 8$^{\circ}$ and surface energy to 65 ergs/cm. In case of PS, the contact angle and surface energy changes were similar results of PE, but the contact angle of PTEE samples decreased with ion dose up to 1$\times$1015 ions/$\textrm{cm}^2$, increased at higher dose, and finally increased to the extent that no wetting was appeared at 1$\times$1017 ions/$\textrm{cm}^2$. These results must be due to the hydrogen ion beam that cleans the surface removing the impurities on polymer surfaces, then hydrogen ion beam was activated with C-H bonding to make some functional groups in order to react with the oxygen gases. Finally, unstable polymer surface can be changed from hydrophobic to hydrophilic formation such as C-O and C=O that were confirmed by the XPS analysis, conclusionally, the ion assisted reaction is very effective tools to attach reactive ion species to form functional groups on C-C bond chains of PE, PS and PTFE.

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Properties of $TiO_2$ thin films deposited by ion-beam assisted reactive magnetron sputtering (이온빔 보조 반응이온 마그네트론 스퍼터링으로 증착된 $TiO_2$박막의 특성)

  • 김성화;이재홍;황보창권
    • Journal of the Korean Vacuum Society
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    • v.11 no.3
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    • pp.141-150
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    • 2002
  • Titanium oxide thin films were deposited by DC reactive magnetron sputtering(RMS) with Ar ion-beam assistance using end-Hall ion source at low oxygen partial pressure and long target-to-substrate distance. The optical and structural properties of deposited films were investigated by the measurement of measured transmittance and reflectance, atomic force microscope(AFM), and X-ray diffraction(XRD). The results show that the Ax ion-beam assisted RMS for titanium oxide thin films induces the higher packing density, lower absorption, and smoother surface than the conventional RMS, suggesting that it can be employed in deposition of optical dielectric coatings.

Charicteristics of HF 10-cm Type Grid Ion Source for Inert and Chemically Reactive Gases.

  • Chol, W.K;Koh, S.K;Jang, H.G;Jung, H.J;Kondranin, S.G.;Kralkina, E.A.;Bougrov, G.E.
    • Proceedings of the Korean Vacuum Society Conference
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    • 1996.02a
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    • pp.102-102
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    • 1996
  • This paper represents a new type low power High Frequency technological ion source (HF TIS) for ion - beam processing: the surface modification of materials, cleaning of surface, sputtering, coating of thin films, and polishing. The operational principle of HF TIS is based on the excitation of electrostatic waves in plasma located in the external magnetic field. Low power HF TIS with diameter 92 rom gives the opportunity to obtain beams of inert and chemically reactive gases with currents range from 5 to 150 mA (current density $0.015\;~\;3.5\;mA/\textrm{m}^2$) and ion beam energy 100 ~ 2500 eV at a HF power level 10 ~ 150 W. Three grid concave type ion optical system (IOS) is used for extraction and formation ofion beam.n beam.

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Study on The Electrical Characteristics of Chromium Oxide Film Produced by ton Beam Sputter Deposition (이온선 스퍼터 증착법에 의하여 제초된 CrOX의 전기적 특성에 관한 연구)

  • 조남제;장문식;이규용
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.11a
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    • pp.409-414
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    • 1999
  • The influence of ion beam energy and reactive oxygen partial pressure on the electrical and crystallographic characteristics of transition metal oxide compound(Cr0x) film was studied in this paper. Chromium oxide films were prepared onto the coverglass using Ion Beam Sputter Deposition(1BSD) technique according to the processing conditions of the partial pressure of reactive oxygen gas and ion beam energy. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. As results, according to the XRD, XPS and resistivity measurement, the deposited films were the cermet type films which has a crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increasernent of the ion b m energy during the deposition process happened to decreasernent of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

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ATO Thin Films Prepared by Reactive lout Beam Sputtering (반응성 이온빔 스퍼터링법에 의해 제조된 ATO박막)

  • 구창영;김경중;김광호;이희영
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.361-364
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    • 2000
  • Antimony doped tin oxide (ATO) thin films were deposited at room temperature by reactive ion-beam sputter deposition (IBSD) technique in oxidizing atmosphere utilizing Sb and Sn metal targets. Effect of Sb doping concentration, film thickness and heat treatment on electrical and optical properties was investigated. The thickness of as-deposited films was controlled approximately to 1500 $\AA$ or 2000$\AA$, and Sb concentration to 10.8 and 14.9 wt%, as determined by SEM and XPS analyses. Heat treatment was performed at the temperature from 40$0^{\circ}C$ to 80$0^{\circ}C$ in flowing $O_2$or forming gas. The resulting ATO films showed widely changing electrical resistivity and optical transmittance values in the visible spectrum depending on the composition, thickness and firing condition.

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Enhanced Interfacial Adhesion between Polymers and Metals(Cu) by Low Energy Ion-beam Irradiation with Reactive Gases (반응성 기체를 첨가한 저 에너지 이온빔 처리에 의한 고분자와 금속 간의 계면 접착력 증가에 관한 연구)

  • Lee, Ji-Seok;Seo, Yong-Sok;Kim, Han-Seong;Gang, Tae-Jin
    • Proceedings of the Korean Society For Composite Materials Conference
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    • 2005.11a
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    • pp.75-78
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    • 2005
  • Using a low-energy Ar+ ion-beam with and without reactive gases, polymers such as chemically stable poly(ether ether ketone) (PTFE) and poly(ether ether ketone) (PEEK) films were modified to have special surface features. The adhesion strength between the polymers and the copper was significantly improved because of both changes in the surface topography and chemical interactions due to polymer surface functionalization (oxidation and amination). The surface modification altered the failure mode from adhesive failure for the unmodified polymer/Cu interface to cohesive failure for the surface-modified polymer/Cu layer interface..

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Deposition of AIN Thin Films by Single Ion Beam Sputtering (단일 이온빔 스퍼터링법을 이용한 AIN 박막의 증착)

  • 이재빈;주한용;이용의;김형준
    • Journal of the Korean Ceramic Society
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    • v.34 no.2
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    • pp.209-215
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    • 1997
  • Aluminum nitride(AIN) thin films were deposited by reactive single ion beam sputtering using N2 or NH3 as reactive gas. The structural, compositional and optical properties of AIN thin films were characterized by XRD, GAXRD, TEM, SEM, XPS UV/VIS spectrophotometer, and FT-IR. All the deposited AIN thin films were amorphous by the analysis fo XRD and GAXRD. However, TEM analysis showed that AIN nano-crystallites were uniformly distributed in the films. The presence of Al-N bonds were also confirmed by FT-IR and XPS analyses. The optical bandgap of AIN films increased up to 6.2 eV and the transmittance was a-bout 100% in visible range with approaching the stoichimetric composition. Irrespective of using N2 or NH3 as reactive gas, the deposited AIN thin films had very smooth surface morphologies. Their refractive index ranged from 1.6 to 1.7.

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ION BEAM AND ITS APPLICATIONS

  • Koh, S.K.;Choi, S.C.;Kim, K.H.;Cho, J.S.;Choi, W.K.;Yoon, Y.S.;Jung, H.J.
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.110-114
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    • 1997
  • Development of metal ion source growth of high quality Cu metal film formation of non-stoichiometric $SnO_2$ films of Si(100), and modification fo polymer surface by low enregy ion beam have been carried out at KIST Ion Beam Lab. A new metal ion source with high ion beam flux has been developed by a hybrid ion beam (HIB) deposition and non-stoichiometric $SnO_2$ films are controlled by supplying energy. The ion assisted reaction (IAR) in which keV ion beam is irradiated in reactive gas environment has been deveolped for modifying the polymers and enhancing adhesion to other materials and advantages of the IAR have been reviewed.

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The Electrical Characteristics of Chromium Oxide Film Produced by Son Beam Sputter Deposition (이온선 스퍼터 증착법에 의하여 제조된 CrOx의 전기적 특성)

  • 조남제;이규용
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.6
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    • pp.518-523
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    • 2002
  • The influences of ion beam energy and reactive oxygen partial pressure on the physical and crystallographic characteristics of transition metal oxide compound(CrOx) film were studied in this paper. Chromium oxide films were deposited onto a cover-glass using ion Beam Sputter Deposition(IBSD) technique according to the various processing parameters. Crystallinity and grain size of as-deposited films were analyzed using XRD analysis. Thickness and Resistivity of the films were measured by $\alpha$-step and 4-point probe measurement. According to the XRD, XPS and resistivity results, the deposited films were the cermet type films which had crystal structure including amorphous oxide(a-oxide) phase and metal Cr phase simultaneously. The increment of the ion beam energy during the deposition process led to decreasing of metal Cr grain size and the rapid change of resistivity above the critical $O_2$ partial pressure.

Effect of O2 Partial Pressure on AlOx Thin Films Prepared by Reactive Ion Beam Sputtering Deposition

  • Seong, Jin-Wook;Yoon, Ki-Hyun;Kim, Ki-Hwan;Beag, Young-Whoan;Koh, Seok-Keun
    • Journal of the Korean Ceramic Society
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    • v.41 no.5
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    • pp.364-369
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    • 2004
  • The barrier and optical properties of AlO$_{x}$ thin films on polycarbonate deposited by Reactive Ion Beam Sputtering (RIBS) were investigated at different oxygen partial pressure. We measured the deposition rate of AlO$_{x}$ thin films. As the oxygen partial pres-sure increased, the deposition rate increased then decreased. The changes of deposition rate are associated with the properties of deposited films. The properties of deposited AlO$_{x}$ thin films were studied using X-ray Photoelectron Spectroscopy (XPS), Scan-ning Electron Microscopy (SEM), and Atomic Force Microscopy (AFM). Optimum deposition parameters were found for fabricat-ing aluminum oxide thin films with high optical transparency for visible light and low Oxygen Transmission Rate (OTR). The optical transmittance of AlO$_{x}$ thin film deposited on polycarbonate (PC) showed the same value of bare PC.bare PC.