• Electrical & Electronic Materials
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• v.7 no.3
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• pp.225-230
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• 1994

In this paper, we have fabricated short channel MOSFETs with these parameters to verify the validity of process parameters extraction by DTC method. The experimental results of fabricated short channel devices according to the optimal process parameters demonstrate good device characteristics such as good drain current-voltage characteristics, low body effects and threshold voltage of$\leq$+-.1.0V, high punch through and breakdown voltage of$\leq$12V, low subthreshold swing(S.S) values of$\leq$105mV/decade.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.50-55
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• 2016

In this paper, we have analyzed the electrical characteristics of 1200V trench gate field stop IGBT and have compared to NPT planar type IGBT and NPT planar field stop IGBT. As a result of analyzing, we obtained superior electrical characteristics of trench gate field stop IGBT than conventional IGBT. To begin with, the breakdown voltage characteristic was showed 1,460 V and on state voltage drop was showed 0.7 V. We obtained 3.5 V threshold voltage, too. To use these results, we have extracted optimal design and process parameter and designed trench gate field stop IGBT. The designed trench gate IGBT will use to inverter of renewable energy and automotive industry.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07a
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• pp.405-408
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• 2004

In this work, Analytical model for voltage and current characteristics of NPT(Non-PunchThrough) IGBT(Insulated Gate Bipolar Transistor) was represented. voltage and current characteristics models were based on prediction on power loss of NPT IGBT during transient condition. For Analytical current model, excess carrier concentration and accumulated charge in active base width was analyzed with time variance. Analytical models were simulated by varying lifetime of excess minority carrier.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.97-98
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• 2005

양성자 조사법에 의하여 고속 전력용 다이오드를 제작하기 위하여 punch-through 다이오드에 다양한 조건으로 양성자를 조사하였다. 동일한 소자에 전자선을 조사한 소자와 속도 향상을 위한 공정이 행하여지지 않은 동일한 소자 각각의 특성을 비교 분석하였다. 양성자 주입은 주입 에너지를 1 MeV 와 1.3 MeV로, 각 에너지 조건에서 도즈를 $1\times10^{12}cm^{-2}$, $1\times10^{13}cm^{-2}$로 변화 시켰다. 분석 결과 양성자 주입된 소자에서 역방향 회복시간은 최소 소자의 약 45%, 전자선이 조사된 소자에 비하여 약 73 %의 값으로 향상시킬 수 있었으며 역방향 항복 전압과 순방향 저항은 처리되지 않은 소자와 전자빔이 조사된 시편들의 값과 비슷한 값을 나타내었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.173-174
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• 2006

In this paper we proposed transient model for NPT(Non Punch-Through) IGBT(Insulated Gate Bipolar Transistor) with gate resistances. As gate resistance increases, turn-off time increases. But If gate resistance is small, overshoot voltage increase. To analyze the effect of gate resistance, the transient model is made and the experiments are conducted. We used gate resistances of values; 8[$\Omega$], 140[$\Omega$], 810[$\Omega$] for simulations and experiments. We compared theoretical and experimental results and obtained good agreements.

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 1998.06a
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• pp.79-83
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• 1998

This study was conducted to delineate plume occurred in hazardous waste disposal site. At first, CPT (Cone Penetrometer Test) rig and HydroPunch were used to collect depth-discrete groundwater samples in concerned area. However, it was not capable of sampling the groundwater due to the cone refusal where the residual clay are layered at nominal depth through the aquifer. Alternatively, a number of temporary wells were installed after each of locations was penetrated using a modified steel cone functioned by CPT rig. The samples taken from those of wells were characterized by GCMS and GCFID, which revealed that sulfolane and thiolane were mainly presented. Subsequent analyses performed for the samples taken from permanent nest piezometers consistently demonstrated that possible plume boundary can be presented in the study area where contaminants were found as low as detection limit or levels of not-detectable.

• Transactions of Materials Processing
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• v.5 no.2
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• pp.130-137
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• 1996

The sheet formability can be improved by the optimum drawbeads installation because draw-beads can control the flow of the metal into the die cavity when the punch enters into the die opening, In this study the drawing characteristics for step drawbead are analyzed by 2-D rigid -plastic FEM and also are measured experimentally. In addition for the validity of FEM theoretical results are compared with the experimental results. Especially the draw bead restrain-ing forces and the strain distributions of drawn specimens are obtained in both FEM and experiment. Also the effects of the drawbead dimensions drawing angles and blank holding forces on the drawing characteristics are investigated.

• Transactions of Materials Processing
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• v.5 no.2
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• pp.97-104
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• 1996

It is very important to obtain the knowledge of loads and flow patterns in most processes because these information are the fundamental data of die design and process design. The objective of present study is to investigate loads and metal flow patterns for various process conditions in flat die extrusion of square-bars from circular billets. For analyzing the metal flow patterns of the billets photo etching is used on sections of split specimen. From this method metal flow patterns are analyzed for various area reductions friction factors and punch stroke through the process from initial-stage to final-stage. Experiments are carried out with hard solder billets at room temperature.

• ETRI Journal
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• v.43 no.5
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• pp.916-922
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• 2021

We calculated the correlation between the doping concentration of the charge layer and the multiplication layer for separate absorption, grading, charge, and multiplication InGaAs/InAlAs avalanche photodiodes (APDs). For this purpose, a predictable program was developed according to the concentration and thickness of the charge layer and the multiplication layer. We also optimized the design, fabrication, and characteristics of an APD for 20 Gbps application. The punch-through voltage and breakdown voltage of the fabricated device were 10 V and 33 V, respectively, and it was confirmed that these almost matched the designed values. The 3-dB bandwidth of the APD was 10.4 GHz, and the bit rate was approximately 20.8 Gbps.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.20 no.6
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• pp.76-81
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• 2021

A plastic noise barrier is a structure installed to minimize noise, and it is composed of the main plate, sound-absorbing plate, and sound-absorbing material. Plastic noise barrier structures have several advantages compared to other products, such as light weight, anticorrosion, durability, easy assembly, rapid construction, and low costs. In this study, the main and sound-absorbing plates were manufactured through extrusion molding, and the sound-absorbing plate was finished with a press to improve the conventional injection molding. Extrusion molding dies and punch dies were designed, and a profile extrusion-molding system was developed. Thus, inexpensive and efficient sound-absorbing and main plates can be produced, and the noise barrier structure can be assembled rapidly. Additionally, a noise barrier structure with extended service life and excellent quality can be constructed by creating uniform free space to accommodate increased temperatures after assembly and installation.