Parameter Extraction and Device Characteristics of Submicron MOSFET'S(II) -Characteristics of fabricated devices-

서브마이크론 MOSFET의 파라메터 추출 및 소자 특성 II -제작된 소자의 특성-

In this paper, we have fabricated short channel MOSFETs with these parameters to verify the validity of process parameters extraction by DTC method. The experimental results of fabricated short channel devices according to the optimal process parameters demonstrate good device characteristics such as good drain current-voltage characteristics, low body effects and threshold voltage of$\leq$+-.1.0V, high punch through and breakdown voltage of$\leq$12V, low subthreshold swing(S.S) values of$\leq$105mV/decade.