• 제목/요약/키워드: power-supply rejection

검색결과 30건 처리시간 0.026초

Low Drop-Out (LDO) Voltage Regulator with Improved Power Supply Rejection

  • Jang, Ho-Joon;Roh, Yong-Seong;Moon, Young-Jin;Park, Jeong-Pyo;Yoo, Chang-Sik
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제12권3호
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    • pp.313-319
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    • 2012
  • The power supply rejection (PSR) of low drop-out (LDO) voltage regulator is improved by employing an error amplifier (EA) which is configured so the power supply noise be cancelled at the output. The LDO regulator is implemented in a 0.13-${\mu}m$ standard CMOS technology. The external supply voltage level is 1.2-V and the output is 1.0-V while the load current can range from 0-mA to 50-mA. The power supply rejection is 46-dB, 49-dB, and 38-dB at DC, 2-MHz, and 10-MHz, respectively. The quiescent current consumption is 65-${\mu}A$.

A Capacitor-less Low Dropout Regulator for Enhanced Power Supply Rejection

  • Yun, Seong Jin;Kim, Jeong Seok;Jeong, Taikyeong Ted.;Kim, Yong Sin
    • IEIE Transactions on Smart Processing and Computing
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    • 제4권3호
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    • pp.152-157
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    • 2015
  • Various power supply noise sources in a system integrated circuit degrade the performance of a low dropout (LDO) regulator. In this paper, a capacitor-less low dropout regulator for enhanced power supply rejection is proposed to provide good power supply rejection (PSR) performance. The proposed scheme is implemented by an additional capacitor at a gate node of a pass transistor. Simulation results show that the PSR performance of the proposed LDO regulator depends on the capacitance value at the gate node of the pass transistor, that it can be maximized, and that it outperforms a conventional LDO regulator.

이중 변환 UPS의 병렬 운전 시 외란 저감 성능 향상을 위한 정지 좌표계 상의 전향 보상 기법 (Feed-Forward Compensation Technique in Stationary Reference Frame for the Enhanced Disturbance Rejection Performance in Parallel Operation of Double-Conversion UPSs)

  • 류효준;윤영두;모재성;최승철;우태겸
    • 전력전자학회논문지
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    • 제27권5호
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    • pp.367-375
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    • 2022
  • Generally, a proportional-resonant controller is used to eliminate steady-state errors during the voltage-current control of a double-conversion uninterruptible power supply (UPS) in a stationary reference frame. Additionally, the feed-forward control compensating for the load current, which can be considered a disturbance of the voltage controller, can be used to improve the disturbance rejection performance. However, during the parallel operation of UPSs, circulating current can occur between UPS modules when performing both feed-forward control and droop control because feed-forward control reduces the circulating current impedance. This study proposes a feed-forward compensation technique that considers the impedance of circulating current. An additional feed-forward compensation technique is developed to enhance the disturbance rejection performance. The validity of the proposed feed-forward compensation technique is verified by the experiment results of the parallel operation of a 500 W double-conversion UPS module.

직접 보상 트랜지스터를 사용하는 고주파 PSR 개선 LDO 레귤레이터 (High-Frequency PSR-Enhanced LDO regulator Using Direct Compensation Transistor)

  • 윤영호;김대정;모현선
    • 전기전자학회논문지
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    • 제23권2호
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    • pp.722-726
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    • 2019
  • 본 논문에서는 고주파 영역에서의 전원잡음제거 (PSR) 특성이 개선된 low drop-out (LDO) 레귤레이터를 제안한다. 특히, PMOS 전력 스위치의 유한한 출력저항을 관통하는 고주파 전원잡음을 상쇄하기 위해 출력저항이 큰 NMOS 트랜지스터를 보상 회로로 추가하였다. 보상 트랜지스터에 의한 전원잡음제거는 해석적으로 설명하여 개선에 대한 방향을 제시하였다. $0.35{\mu}m$ 표준 CMOS 공정으로 회로를 제작하고 Spectre 시뮬레이션을 수행하여 10MHz에서 기존의 LDO 레귤레이터 대비 26dB의 PSR 개선을 확인하였다.

회로 최적화를 위한 외부 커패시터가 없는 LDO 레귤레이터의 안정도와 PSR 성능 모델 (Stability and PSR(Power-Supply Rejection) Models for Design Optimization of Capacitor-less LDO Regulators)

  • 주소연;김진태;김소영
    • 한국전자파학회논문지
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    • 제26권1호
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    • pp.71-80
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    • 2015
  • 한정된 배터리 용량으로 장시간 모바일 시스템을 구동시키기 위하여 저전력 설계에 대한 요구가 높아지면서 PMIC(Power Management IC)의 핵심 부분인 LDO(Low Drop-Out) 레귤레이터의 설계에 대한 관심이 증가하고 있다. 본 논문에서는 Dongbu HiTek $0.5{\mu}m$ BCDMOS 공정을 이용하여 최적화 기법 중 하나인 기하 프로그래밍(Geometric Programming: GP)을 통해 외부 커패시터가 없는 LDO 레귤레이터의 성능을 최적화하였다. 계수가 양수인 단항식 (monomial)으로 모델링된 트랜지스터의 특성 파라미터들을 이용하여 안정도(stability)와 PSR(Power-Supply Rejection)과 같은 LDO 레귤레이터의 특성을 기하 프로그래밍(Geometric Programming: GP)에 적용 가능한 형태로 유도하였다. 위상 마진(phase margin)과 PSR 모델은 시뮬레이션 결과와 비교하였을 때 각각 평균 9.3 %와 13.1 %의 오차를 보였다. 제안한 모델을 사용하여 PSR 제약 조건이 바뀔 경우, 자동화된 회로 설계를 수행하였고, 모델의 정확도를 검증하였다. 본 논문에서 유도된 안정도와 PSR 모델을 이용하면 회로의 목표 성능이 변화하더라도 부가적인 설계 시간을 줄이면서 목표 성능을 가진 회로를 재설계하는 것이 가능할 것이다.

An MMIC Broadband Image Rejection Downconverter Using an InGaP/GaAs HBT Process for X-band Application

  • Lee Jei-Young;Lee Young-Ho;Kennedy Gary P.;Kim Nam-Young
    • Journal of electromagnetic engineering and science
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    • 제6권1호
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    • pp.18-23
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    • 2006
  • In this paper, we demonstrate a fully integrated X-band image rejection down converter, which was developed using InGaP/GaAs HBT MMIC technology, consists of two single-balanced mixers, a differential buffer amplifier, a differential YCO, an LO quadratue generator, a three-stage polyphase filter, and a differential intermediate frequency(IF) amplifier. The X-band image rejection downconverter yields an image rejection ratio of over 25 dB, a conversion gain of over 2.5 dB, and an output-referred 1-dB compression power$(P_{1dB,OUT})$ of - 10 dBm. This downconverter achieves broadband image rejection characteristics over a frequency range of 1.1 GHz with a current consumption of 60 mA from a 3-V supply.

높은 PSRR을 갖는 Low-Dropout(LDO) 레귤레이터 (High PSRR Low-Dropout(LDO) Regulator)

  • 김인혜;노정진
    • 전기전자학회논문지
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    • 제20권3호
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    • pp.318-321
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    • 2016
  • IoT 산업이 빠르게 성장하면서 전원 관리 집적회로의 중요성이 부각되고 있다. 본 논문에서는 리플 Subtractor, 피드 포워드 커패시터, OTA를 이용한 LDO 구조를 제안한다. 이를 통해 10MHz가 넘는 고주파 영역에서도 -40dB 이상 높은 전원 전압 제거비(PSRR)를 얻었다. 설계된 Low-Dropout(LDO) 레귤레이터는 $0.18{\mu}m$ CMOS 공정에서 설계되었으며 시뮬레이션 결과 PSRR은 부하 전류 40mA, 500kHz에서 -73.4dB다. 최대 구동 가능 전류는 40mA이다.

Ultra-Low-Power Differential ISFET/REFET Readout Circuit

  • Thanachayanont, Apinunt;Sirimasakul, Silar
    • ETRI Journal
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    • 제31권2호
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    • pp.243-245
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    • 2009
  • A novel ultra-low-power readout circuit for a pH-sensitive ion-sensitive field-effect transistor (ISFET) is proposed. It uses an ISFET/reference FET (REFET) differential pair operating in weak-inversion and a simple current-mode metal-oxide semiconductor FET (MOSFET) translinear circuit. Simulation results verify that the circuit operates with excellent common-mode rejection ability and good linearity for a single pH range from 4 to 10, while only 4 nA is drawn from a single 1 V supply voltage.

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A High Gain and High Harmonic Rejection LNA Using High Q Series Resonance Technique for SDR Receiver

  • Kim, Byungjoon;Kim, Duksoo;Nam, Sangwook
    • Journal of electromagnetic engineering and science
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    • 제14권2호
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    • pp.47-53
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    • 2014
  • This paper presents a high gain and high harmonic rejection low-noise amplifier (LNA) for software-defined radio receiver. This LNA exploits the high quality factor (Q) series resonance technique. High Q series resonance can amplify the in-band signal voltage and attenuate the out-band signals. This is achieved by a source impedance transformation. This technique does not consume power and can easily support multiband operation. The chip is fabricated in a $0.13-{\mu}m$ CMOS. It supports four bands (640, 710, 830, and 1,070MHz). The measured forward gain ($S_{21}$) is between 12.1 and 17.4 dB and the noise figure is between 2.7 and 3.3 dB. The IIP3 measures between -5.7 and -10.8 dBm, and the third harmonic rejection ratios are more than 30 dB. The LNA consumes 9.6 mW from a 1.2-V supply.

Design of UHF CMOS Front-ends for Near-field Communications

  • Hamedi-Hagh, Sotoudeh;Tabesh, Maryam;Oh, Soo-Seok;Park, Noh-Joon;Park, Dae-Hee
    • Journal of Electrical Engineering and Technology
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    • 제6권6호
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    • pp.817-823
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    • 2011
  • This paper introduces an efficient voltage multiplier circuit for improved voltage gain and power efficiency of radio frequency identification (RFID) tags. The multiplier is fully integratable and takes advantage of both passive and active circuits to reduce the required input power while yielding the desired DC voltage. A six-stage voltage multiplier and an ultralow power voltage regulator are designed in a 0.13 ${\mu}m$ complementary metal-oxide semiconductor process for 2.45 GHz RFID applications. The minimum required input power for a 1.2 V supply voltage in the case of a 50 ${\Omega}$ antenna is -20.45 dBm. The efficiency is 15.95% for a 1 $M{\Omega}$ load. The regulator consumes 129 nW DC power and maintains the reference voltage in a 1.1% range with $V_{dd}$ varying from 0.8 to 2 V. The power supply noise rejection of the regulator is 42 dB near a 2.45 GHz frequency and performs better than -32 dB from 100 Hz to 10 GHz frequencies.