• Journal of the Korea Institute of Information and Communication Engineering
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• v.3 no.2
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• pp.273-280
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• 1999

This paper presents the design and implementation of circuit analyzer system for the convenient troubleshooting and diagnosis of the electronics appliance using the curve tracer technology of analog signature analysis. The circuit analyzer provides advanced troubleshooting capabilities to simplify testing newer technology components such as CMOS and MOS circuits, its built-in pulse generator lets thoroughly troubleshoot gate-fired devices such as SCRs, TRIACs and optocouplers. The circuit analyzer while the power to the circuitry testing is turned of, so that avoid an accidental short that could cause further damage, its allow to analyze the impedance state of a solid-state component, which makes it perfect for finding leakage or substrate damage that has brought a system or PCB down prematurely. Because it can compare suspect components to known-good equivalents, it's verified the ideal application for troubleshooting when documentation is missing or incomplete.

• JSTS:Journal of Semiconductor Technology and Science
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• v.3 no.1
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• pp.13-20
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• 2003

Both MgO and $Sc_2O_3$ are shown to provide low interface state densities (in the $10^{11}{\;}eV^{-1}{\;}cm{\;}^{-2}$ range)on n-and p-GaN, making them useful for gate dielectrics for metal-oxide semiconductor(MOS) devices and also as surface passivation layers to mitigate current collapse in GaN/AlGaN high electron mobility transistors(HEMTs).Clear evidence of inversion has been demonstrated in gate-controlled MOS p-GaN diodes using both types of oxide. Charge pumping measurements on diodes undergoing a high temperature implant activation anneal show a total surface state density of $~3{\;}{\times}{\;}10^{12}{\;}cm^{-2}$. On HEMT structures, both oxides provide effective passivation of surface states and these devices show improved output power. The MgO/GaN structures are also found to be quite radiation-resistant, making them attractive for satellite and terrestrial communication systems requiring a high tolerance to high energy(40MeV) protons.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.36C no.1
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• pp.49-58
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• 1999

This paper describes an integrated low pass filter fabricated by using $0.8{\mu}m$ single poly CMOS ASIC technology. The filter has been designed for a 5th-order elliptic switched capacitor filter with cutoff frequency of 5khz, 0.1dB passband ripple. The filter consists of MOS swiches poly capacitors and five CMOS op-amps. For the realization of the SC filter, continuous time transfer function H(s) is obtained from LC passive type, and transfered as discrete time transfer H(z) through bilinear-z transform. Another filter has been designed by capacitor scaling for reduced chip area, considering dynamic range of the op-amp. The test results of two fabricated filters are cutoff frequency of 4.96~4.98khz, 35~38dB gain attenuation and 0.72~0.81dB passband ripple with the ${\pm}2.5V$power supply clock of 50KHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.5
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• pp.49-54
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• 2009

This paper describes implementation of the 1.9GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma }-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.2{\times}0.7mm^2$, and the chip area only core for IP in SoC is $1.1{\times}0.4mm^2$. The test results show that there is no special spurs except -63.06dB of the 6MHz reference spurs in the PLL circuitry. There is good phase noise performance like -116.17dBc/Hz in 1MHz offset frequency.

• Journal of the Institute of Electronics Engineers of Korea CI
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• v.45 no.6
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• pp.87-93
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• 2008

This paper describes implementation of the 5.0GHz RF frequency synthesizer with $0.18{\mu}m$ silicon CMOS technology being used as an application of the IEEE802.15.4 USN sensor node transceiver modules. To get good performance of speed and noise, design of the each module like VCO, prescaler, 1/N divider, fractional divider with ${\Sigma}-{\Delta}$ modulator, and common circuits of the PLL has been optimized. Especially to get good performance of speed, power consumption, and wide tuning range, N-P MOS core structure has been used in design of the VCO. The chip area including pads for testing is $1.1*0.7mm^2$, and the chip area only core for IP in SoC is $1.0*0.4mm^2$. Through comparing and analysing of the designed two kind of the frequency synthesizer, we can conclude that if we improve a litter characteristics there is no problem to use their as IPs.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.35 no.5A
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• pp.504-512
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• 2010

The paper proposes the 6bit 800MS/s flash A/D converter that can be applied to wireless USB chip-set. The paper simplified the error correction circuit and synchronization block as one circuit which are used respectively, and furthermore reduced the burden on the hardware. Comparing to the conventional error correction circuit, the proposed error correction circuit in this paper reduced 5 MOS transistors, the area of each error correction circuit is reduced by 9%. The A/D converter is fabricated with 0.18um CMOS 1-poly 6-metal process, and power dissipation is 182mW at 0.8Vpp input range and 1.8V supply voltage. The measured result shows 4.0bit of ENOB at 800MS/s conversion rate and 128.1MHz input frequency.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.287-287
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• 2011

ITRS(international technology roadmap for semiconductors)에 따르면 MOS (metal-oxide-semiconductor)의 CD(critical dimension)가 45 nm node이하로 줄어들면서 poly-Si/SiO2를 대체할 수 있는 poly-Si/metal gate/high-k dielectric이 대두되고 있다. 일반적으로 metal gate를 식각시 정확한 CD를 형성시키기 위해서 plasma를 이용한 RIE(reactive ion etching)를 사용하고 있지만 PIDs(plasma induced damages)의 하나인 PICD(plasma induced charging damage)의 발생이 문제가 되고 있다. PICD의 원인으로 plasma의 non-uniform으로 locally imbalanced한 ion과 electron이 PICC(plasma induced charging current)를 gate oxide에 발생시켜 gate oxide의 interface에 trap을 형성시키므로 그 결과 소자 특성 저하가 보고되고 있다. 그러므로 본 연구에서는 이에 차세대 MOS의 metal gate의 식각공정에 HDP(high density plasma)의 ICP(inductively coupled plasma) source를 이용한 중성빔 시스템을 사용하여 PICD를 줄일 수 있는 새로운 식각 공정에 대한 연구를 하였다. 식각공정조건으로 gas는 HBr 12 sccm (80%)와 Cl2 3 sccm (20%)와 power는 300 w를 사용하였고 200 eV의 에너지로 식각공정시 TEM(transmission electron microscopy)으로 TiN의 anisotropic한 형상을 볼 수 있었고 100 eV 이하의 에너지로 식각공정시 하부층인 HfO2와 높은 etch selectivity로 etch stop을 시킬 수 있었다. 실제 공정을 MOS의 metal gate에 적용시켜 metal gate/high-k dielectric CMOSFETs의 NCSU(North Carolina State University) CVC model로 effective electric field electron mobility를 구한 결과 electorn mobility의 증가를 볼 수 있었고 또한 mos parameter인 transconductance (Gm)의 증가를 볼 수 있었다. 그 원인으로 CP(Charge pumping) 1MHz로 gate oxide의 inteface의 분석 결과 이러한 결과가 gate oxide의 interface trap양의 감소로 개선으로 기인함을 확인할 수 있었다.

• Journal of the Korean Institute of Intelligent Systems
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• v.15 no.2
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• pp.230-235
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• 2005

In this paper, we propose an algorithm that improves a tone quality of a noisy audio signal in order to enhance a performance of perceptual filter using intelligent estimation of noise pattern from a band degraded by additive noise. The proposed method doesn't use the estimated noise which is obtained from silent range. Instead new estimated noise according to the power of signal and effect of noise variation is considered for each frame. So the noisy audio signal is enhanced by the method which controls a estimation of noise Pattern effectively in a noise corruption band. To show the performance of the proposed algorithm, various input signals which had a different signal-to-noise ratio(SNR) such as $5\cal{dB},\;10\cal{dB},\;15\cal{dB}\;and\;20\cal{dB}$ were used to test the proposed algorithm. we carry out SSNR and NMR of objective measurement and MOS test of subjective measurement. An approximate improvement of $7.4\cal{dB},\;6.8\cal{dB},\;5.7\cal{dB},\;5.1\cal{dB}$ in SSNR and $15.7\cal{dB},\;15.5\cal{dB},\;15.2\cal{dB},\;14.8\cal{dB}$ in NMR is achieved with the input signals, respectively. And we confirm the enhancement of tone quality in terms of mean opinion score(MOS) test which is result of subjective measurement.

• The Journal of the Acoustical Society of Korea
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• v.23 no.6
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• pp.446-453
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• 2004

In this paper, a new adaptive perceptual filter using variable threshold to enhance audio signals degraded by additively nonstationary noise is proposed. The adaptive perceptual filter updates variable threshold each time according to the power of signal and the effect of noise variation. So the noisy audio signal is enhanced by the method which controls a residual noise effectively. The proposed algorithm uses the perceptual filter which transforms a time domain signal into frequency domain and calculates an intensity energy and an excitation energy in bark domain. In this method. the stage updated the response of filter is decided by threshold. The proposed algorithm using vairable threshold effectively controls a residual noise using the energy difference of audio signals degraded by the additive nonstationary noise. The proposed method is tested with the noisy audio signals degraded by nonstationary noise at various signal -to-noise ratios (SNR). We carry out NMR and MOS test when the input SNR is 15dB. 20dB. 25dB and 30dB. An approximate improvement of 17.4dB. 15.3dB, 12.8dB. 9.8dB in NMR and enhancement of 2.9, 2.5, 2.3, 1.7 in MOS test is achieved with the input signals. respectively.

• The Journal of the Acoustical Society of Korea
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• v.26 no.3E
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• pp.87-96
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• 2007

In this paper we propose a new noise reduction algorithm for stationary and nonstationary noisy environments. Our algorithm classifies the speech and noise signal contributions in time-frequency bins, and is not based on a spectral algorithm or a minimum statistics approach. It relies on calculating the ratio of the standard deviation of the noisy power spectrum in time-frequency bins to its normalized time-frequency average. We show that good quality can be achieved for enhancement speech signal by choosing appropriate values for ${\delta}_t\;and\;{\delta}_f$. The proposed method greatly reduces the noise while providing enhanced speech with lower residual noise and somewhat higher mean opinion score (MOS), background intrusiveness (BAK) and signal distortion (SIG) scores than conventional methods.