• Journal of applied mathematics & informatics
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• v.36 no.5_6
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• pp.475-489
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• 2018

In this paper, by using the polylogarithm function, we introduce a generalized poly-Bernoulli numbers and polynomials with variable a. We find several combinatorial identities and properties of the polynomials. We give some properties that is connected with the Stirling numbers of second kind. Symmetric properties can be proved by new configured special functions. We display the zeros of the generalized poly-Bernoulli polynomials with variable a and investigate their structure.

• Journal of applied mathematics & informatics
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• v.39 no.5_6
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• pp.643-654
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• 2021

In this paper, we define a modified q-poly-Bernoulli polynomials of the first type and modified q-poly-tangent polynomials of the first type by using q-polylogarithm function. We derive some identities of the modified polynomials with Gaussian binomial coefficients. We also explore several relations that are connected with the q-analogue of Stirling numbers of the second kind.

• Communications of the Korean Mathematical Society
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• v.36 no.1
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• pp.19-26
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• 2021

Degenerate versions of the special polynomials and numbers since they have many applications in analytic number theory, combinatorial analysis and p-adic analysis. In this paper, we define the degenerate poly-Euler numbers and polynomials arising from the modified polyexponential functions. We derive explicit relations for these numbers and polynomials. Also, we obtain some identities involving these polynomials and some other special numbers and polynomials.

• Journal of Applied and Pure Mathematics
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• v.5 no.5_6
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• pp.375-387
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• 2023

In this paper, we construct a fully modified q-poly-Euler numbers and polynomials of the second type and give some properties. Finally, we investigate the zeros of the fully modified q-poly-Euler numbers and polynomials of the second type by using computer.

• Journal of Applied and Pure Mathematics
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• v.6 no.1_2
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• pp.1-11
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• 2024

In this paper, we define a new fully modified q-poly-Euler numbers and polynomials of the first type by using q-polylogarithm function. We derive some identities of the modified polynomials with Gaussian binomial coefficients. We also explore several relations that are connected with the q-analogue of Stirling numbers of the second kind.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.7
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• pp.525-531
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• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• Proceedings of the Korea Technical Association of the Pulp and Paper Industry Conference
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• 2006.11a
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• pp.1-8
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• 2006

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1499-1500
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• 2011

In this paper, we investigated the electrical properties change of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-pentacene) depending on polymer blend. We fabricated organic thin film transistor (OTFT) using blending solution of small molecule and polymer. In this study poly(2-methoxy-5-(2-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV), poly (9-vinylcarbazole) (PVK), poly [N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)benzidine] (poly-TPD), poly(${\alpha}$-methyl styrene), Poly(methyl methacrylate) (PMMA) are used as a polymer. Fabricated OTFT with blending solution of TIPS-pentacene and PVK shows best performance in this experiment. OTFT fabricated by blending solution of TIPS-pentacene and PVK shows field effect mobility of 0.0189 $cm^2/V{\cdot}s$, on/off ratio of 1.9E-5 and threshold voltage of 7.4 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.12
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• pp.1065-1070
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• 2003

HTO(High Temperature Oxide) films are mainly used as a gate insulator for polysilicon thin film transistors(Poly-Si TFT's). The HTO films, however, show the demerits of a high leakage current and a low electric breakdown voltage comparing with conventional thermal oxides even though they have a better surface in roughness than the thermal oxides. In this paper, we propose an ONO(Oxide-Nitride-Oxide) multilayer as the gate insulator for poly-Si TFT's. The leakage current and electric breakdown voltage of the ONO and HTO were measured. The drain current variation of poly-Si TFT's with a variety of gate insulators was observed. The thickness optimization in ONO films was carried out by studying I$\_$on/I$\_$off/ ratio of the poly-Si TFT's as a function of the thickness of ONO film adopted as gate insulator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.356-356
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• 2010

In this paper, Poly silicon thin-film transistors (poly-Si TFTs) with employed the SPC (Solid phase crystallization) and ELA (Excimer laser annealing) methods on glass panel substrate are fabricated to investigate the electrical poperies. Poly-Si TFTs have recess-channel structure with formated source/drain regions by LPCVD n+ poly Si in low $650^{\circ}C$ temperature. the ELA-TFT show higher on/off current ratio and subthreshold swing than a-Si and SPC TFT that therefore, these results showed that the ELA-TFT might be beneficial for practical embedded TFT memory device application.